GaN-based semiconductor laser epitaxial structure and fabrication method thereof

Abstract

The invention discloses a novel gallium nitride based semiconductor laser epitaxial structure and a preparation method thereof. According to the invention, p-AlGaN with gradually variable Al components is adopted to act as an optical confinement layer, and through the principle of polarization doping, three-dimensional hole gas is realized. According to the invention, the activation efficiency ofan acceptor Mg impurity can be improved, the device voltage can be reduced, and simultaneously the internal loss of a laser can be reduced effectively.

Description

technical field

[0001] The invention belongs to the field of semiconductor lasers, and relates to the design and manufacturing method of the epitaxial structure of gallium nitride-based semiconductor lasers. Background technique

[0002] In the prior art, the lasing wavelength of gallium nitride-based lasers covers the spectral range from ultraviolet to green light, which has broad application prospects in high-density optical storage, laser display and other fields. The performance of violet and blue lasers has reached the practical level, and green lasers have also achieved continuous lasing at room temperature.

[0003] However, the electro-optical conversion efficiency of gallium nitride-based lasers is still much lower than that of gallium arsenide-based lasers, due to failure to achieve effective p-type doping and large internal losses. The difficulty of P-type doping mainly lies in the higher ionization energy of the acceptor impurity. Therefore, the p-type AlGaN o...

Images