Gallium nitride based semiconductor laser epitaxial structure and preparation method thereof

A gallium nitride-based, epitaxial structure technology, applied in the optical waveguide semiconductor structure and other directions, can solve the problems of difficult to achieve high vertical conductivity, high sub-band hole quality, etc., to improve radiation compliance efficiency, enhance electron The effect of blocking and reducing loss

Active Publication Date: 2013-06-19
HANGZHOU HONGSHI TECH
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  • Abstract
  • Description
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Problems solved by technology

Although it has high conductivity in the direction parallel to the heterojunction, in the vertical direction, due to the existence of valence band barriers, tunneling or thermal excitation is required to achieve current transmission; even if an ultra-short period superlattice structure is used, High vertical conductivity is not easy to achieve due to the large hole mass of the subband

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  • Gallium nitride based semiconductor laser epitaxial structure and preparation method thereof
  • Gallium nitride based semiconductor laser epitaxial structure and preparation method thereof
  • Gallium nitride based semiconductor laser epitaxial structure and preparation method thereof

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Embodiment 1

[0047] Such as figure 1 As shown, the GaN-based semiconductor laser epitaxial structure provided by the embodiment of the present invention includes:

[0048] The first layer is a gallium nitride substrate 11; wherein, the thickness of the gallium nitride substrate 11 is 300 μm, and Si is used as a donor impurity to form an n-type substrate, and its resistivity is about 0.001 Ωcm.

[0049] The second layer is an n-type optical confinement layer 12; this layer is a periodic AlGaN / GaN material with a superlattice structure, wherein the thickness of the n-type optical confinement layer 12 is 2 μm, Si is used as a donor impurity, and the Al composition is 4 %.

[0050] The third layer is the n-type InGaN lower optical waveguide layer 13; wherein, the thickness of the n-type InGaN lower optical waveguide layer 13 is 150nm, the composition of In is 4%, Si is used as the donor impurity, and its doping concentration is 1×10 17 cm -3 .

[0051] The fourth layer is the multi-quantum...

Embodiment 2

[0064] Such as figure 1 As shown, the GaN-based semiconductor laser epitaxial structure provided by the embodiment of the present invention includes:

[0065] The first layer is a SiC substrate 11; wherein, the thickness of the SiC substrate 11 is 300 μm, and Si is used as a donor impurity to form an n-type substrate, and its resistivity is about 0.001Ωcm.

[0066] The second layer is an n-type optical confinement layer 12; this layer is a periodic superlattice structure AlGaN / GaN material; wherein, the thickness of the n-type optical confinement layer 12 is 2 μm, Si is used as a donor impurity, and the Al composition is 4 %.

[0067] The third layer is the n-type GaN lower optical waveguide layer 13; wherein, the thickness of the n-type GaN lower optical waveguide layer 13 is 150nm, Si is used as the donor impurity, and its doping concentration is 1×10 17 cm -3 .

[0068] The fourth layer is the multi-quantum well InGaN / GaN active region 14; the thickness of the well is 3...

Embodiment 3

[0081] Such as figure 1 As shown, the GaN-based semiconductor laser epitaxial structure provided by the embodiment of the present invention includes:

[0082] The first layer is a SiC substrate 11; wherein, the thickness of the SiC substrate 11 is 300 μm, and Si is used as a donor impurity to form an n-type substrate, and its resistivity is about 0.001Ωcm.

[0083] The second layer is an n-type optical confinement layer 12; this layer is a periodic superlattice structure AlGaN / GaN material; wherein, the thickness of the n-type optical confinement layer 12 is 2 μm, Si is used as a donor impurity, and the Al composition is 4 %.

[0084] The third layer is the n-type InGaN lower optical waveguide layer 13; wherein, the thickness of the n-type InGaN lower optical waveguide layer 13 is 150nm, the composition of In is 8%, Si is used as the donor impurity, and its doping concentration is 1×10 17 cm -3 .

[0085] The fourth layer is the multi-quantum well InGaN / GaN active region 1...

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Abstract

The invention discloses a novel gallium nitride based semiconductor laser epitaxial structure and a preparation method thereof. According to the invention, p-AlGaN with gradually variable Al components is adopted to act as an optical confinement layer, and through the principle of polarization doping, three-dimensional hole gas is realized. According to the invention, the activation efficiency ofan acceptor Mg impurity can be improved, the device voltage can be reduced, and simultaneously the internal loss of a laser can be reduced effectively.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, and relates to the design and manufacturing method of the epitaxial structure of gallium nitride-based semiconductor lasers. Background technique [0002] In the prior art, the lasing wavelength of gallium nitride-based lasers covers the spectral range from ultraviolet to green light, which has broad application prospects in high-density optical storage, laser display and other fields. The performance of violet and blue lasers has reached the practical level, and green lasers have also achieved continuous lasing at room temperature. [0003] However, the electro-optical conversion efficiency of gallium nitride-based lasers is still much lower than that of gallium arsenide-based lasers, due to failure to achieve effective p-type doping and large internal losses. The difficulty of P-type doping mainly lies in the higher ionization energy of the acceptor impurity. Therefore, the p-type AlGaN op...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/22
Inventor 曾畅张书明刘建平王辉冯美鑫李增成王怀兵杨辉
Owner HANGZHOU HONGSHI TECH
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