Nitride semiconductor laser

Abstract

The invention discloses a nitride semiconductor laser, which comprises sequentially a GaN substrate, a n-GaN layer, a n-AlGaN / GaN superlattice limiting layer, a lower InxGa1-xN gradual change waveguide layer, an InGaN / GaN multiple quantum well active area, an upper InyGa1-yN gradual change waveguide layer, a p-AlGaN electron barrier layer, a p-AlGaN / GaN superlattice limiting layer and a p-GaN contacting layer from bottom to top. In component content increases gradually from bottom to top in the lower InxGa1-xN gradual change waveguide layer and In component content decreases gradually from bottom to top in the upper InyGa1-yN gradual change waveguide layer. The nitride semiconductor laser can decrease the stress between an upper InGaN waveguide layer and the p-AlGaN electron barrier layer effectively, so that ragged steps can be avoided during cleavage. Simultaneously, the nitride semiconductor laser can strengthen optical limiting factors of the laser so as to improve performance of the laser effectively and acquire significant effect.

Description

technical field [0001] The invention relates to a nitride semiconductor laser, which belongs to the field of laser structure design in semiconductor technology. Background technique [0002] Nitride semiconductor lasers have the advantages of simple fabrication, small size, light weight, long life, and high efficiency, and are currently widely used in the fields of optical communication, optical pumping, optical storage, and laser display. [0003] At present, most nitride semiconductor lasers are F-P cavity semiconductor lasers, whose basic structure is GaN substrate, n-GaN layer, n-AlGaN / GaN superlattice confinement layer, lower InGaN waveguide layer, InGaN / GaN multiple quantum wells Active region, upper InGaN waveguide layer, p-AlGaN electron blocking layer, p-AlGaN / GaN superlattice confinement layer, p-GaN contact layer, such as figure 1 shown. In the manufacturing process of nitride semiconductor laser devices, it is necessary to cleavage the laser epitaxial wafer int...

AI Technical Summary

Problems solved by technology

[0004] In the nitride semiconductor laser with the above structure, there is a stress concentration area, that is, the interface between the upper InGaN waveguide and the p-AlGaN electron blocking layer, where the strain is relatively large, and uneven steps are likely to appear when the laser is cleaved, thus The cavity surface of the laser is uneven, the roughness becomes larger, and the absorption of the cavity surface is enhanced, which affects the work and life of the laser

Images