Surface emitting laser and surface emitting laser array

Abstract

The invention discloses a surface emitting laser which comprises a substrate and a functional layer which is of a sandwich-like type structure. The functional layer comprises a first doped layer, an active layer, a limiting layer and a second doped layer, wherein the active layer and the limiting layer are positioned between the first doped layer and the second doped layer. The first doped layer and the second doped layer are used for conveying carriers to the active layer, and the carriers can firstly pass through the limiting layer and then be transmitted to the active layer to compositely emit light. The limiting layer comprises an insulation layer and a conductive column and the conductive column runs through the insulation layer according to a thickness direction, and thus, the carriers need to be transmitted to the active layer through the conductive column, an area of a carrier compounding region of the active region can be limited, and in a case of keeping the same carrier density, a required injection current is smaller, so that in the premise of not changing a volume and an area of photon crystals, a threshold current required for photon excitation is reduced. The invention further provides a surface emitting laser array which also has the beneficial effects above.

Description

technical field [0001] The invention relates to the field of laser technology, in particular to a surface-emitting laser and a surface-emitting laser array. Background technique [0002] Surface-emitting lasers, especially vertical-cavity surface-emitting lasers (VCSELs), have received more and more attention since they were proposed in 1977 due to their advantages such as circularly symmetrical spots, low threshold current, easy two-dimensional integration, and on-surface detection. , are widely used in optical communication, optical interconnection, sensing, optical storage, laser display, laser radar and many other fields. [0003] However, the conventional VCSEL itself has great limitations. First, conventional VCSELs require a complex top-bottom Bragg reflector (DBR) epitaxial growth process, which increases the difficulty and cost of growth. Especially in the long wavelength band, due to the problem of material lattice matching, it is difficult to grow the InP (indiu...

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Problems solved by technology

Especially in the long wavelength band, due to the problem of material lattice matching, the growth of InP (indium phosphide)-based DBR structure is difficult

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