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Preparation for ZnO quantum dot

A technology of quantum dots and pulling method, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of long growth time, superior performance of quantum dot lasers, uncontrollable growth, etc., to improve uniformity, size uniformity and quality. Good results

Inactive Publication Date: 2008-10-01
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preparation method of ZnO quantum dots is mainly a wet chemical method, but this method requires a large amount of solvent, a variety of process steps and a long growth time, and the growth is uncontrollable. Recently, it has been reported that the Si / SiO 2 ZnO quantum dots are grown on the substrate, and ZnO quantum dots are also obtained by pulse laser method and annealing method, but the size and distribution of the prepared ZnO quantum dots are random, and the restricted energy levels of the inhomogeneous quantum dots are dispersed in the Within a certain range, the dispersion of energy will cause a large luminous broadening, so the performance of the quantum dot lasers currently developed is far from being as superior as predicted by the theory

Method used

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  • Preparation for ZnO quantum dot
  • Preparation for ZnO quantum dot
  • Preparation for ZnO quantum dot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] First for 1×1cm 2 The low-doped n-Si sheet with a size of (100) plane was ultrasonically cleaned, and then the volume ratio was 1:1 in H 2 SO 4 +H 2 o 2 The mixed solution was boiled for ten minutes, followed by NH at a volume ratio of 3:1 4 OH+H 2 o 2 Ultrasonic vibration in the mixed solution for 30 minutes, the temperature is 80 ° C, the purpose is to improve the hydrophilicity of the substrate and the flatness of the surface, and then use a dropper to take 2-3 drops of polystyrene nanoparticles with a concentration of 10% and a diameter of 600nm. Drop the suspension of balls on the surface of the treated silicon wafer, let the balls cover the whole substrate uniformly and densely, and then slowly immerse the ball-covered substrate into deionized water. At this time, a single layer of hexagonal close-packed spheres is formed on the substrate and the water surface. In order to prevent the spheres on the water surface from depositing on the substrate again when t...

Embodiment 2

[0027] First the substrate is 1×1cm 2 Low-doped n-Si flakes with large and small (100) planes are subjected to the same surface treatment, using a monodisperse suspension of nanospheres with a concentration of 10% and a diameter of 100nm. The assembled nanospheres were used as templates for the preparation of ZnO quantum dots; -6 Under the condition of Torr, a 5nm thick ZnO thin film was deposited by electron beam evaporation; finally soaked in toluene and ultrasonically vibrated for 2min to remove the nanospheres in the template.

Embodiment 3

[0029] First the substrate is 1×1cm 2 Low-doped n-Si flakes with large and small (100) planes are subjected to the same surface treatment, using a monodisperse suspension of nanospheres with a concentration of 10% and a diameter of 1000 nm, and the same pull method is used to form a monolayer self-assembled nanospheres; then at room temperature, a vacuum of 10 -4 Under the condition of Torr, a 50nm thick ZnO thin film was deposited by electron beam evaporation; finally soaked in toluene and ultrasonically vibrated for 5min to remove the nanospheres in the template.

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Abstract

The present invention provides a preparing method of ZnO quantum dot. Firstly, processing surface treatment to a substrate, then forming a layer nano-sphere assembled by itself by czochralski method in deionized water, the nano-sphere is used as a template for preparing ZnO quantum dot; further, depositing a layer ZnO film which thickness is 5nm-50nm by electron beam evaporation under the conditions of temperature between 25-100 DEG C, 10<-4>-10<-6> Torr vacuum; finally, dipping in toluol, and vibrating 2-5 min by ultrasonic to remove the nano-sphere in the template. The ZnO quantum dot prepared by the method has large growth area, regular arrangement, even distribution. The preparing method simply, economically and effectively produces ZnO quantum dot having larger range, and order. The ZnO oxide semiconductor energy gap is wide, direct wide band gap is transmitted, and exciton binding energy is large, the ZnO quantum dot material becomes expectations of high quantum dot laser and nan0-laser by adding the quantum confinement effect of the quantum dot.

Description

technical field [0001] The invention relates to the preparation of semiconductor nanometer materials and devices, in particular to a preparation method of ZnO quantum dots. Background technique [0002] As a wide bandgap semiconductor, ZnO has good blue light and ultraviolet light emission properties, and high exciton binding energy and low threshold optical pump emission can easily realize efficient stimulated emission. The three-dimensional quantum effect of semiconductor quantum dots leads to significant changes in the effective state density and energy of the system carriers, with larger band gap energy and higher exciton binding energy, making it easier to be used as ultraviolet semiconductor light-emitting tubes and lasers. The preparation method of ZnO quantum dots is mainly a wet chemical method, but this method requires a large amount of solvent, a variety of process steps and a long growth time, and the growth is uncontrollable. Recently, it has been reported that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/54
Inventor 黄靖云陈玲叶志镇
Owner ZHEJIANG UNIV
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