Preparation method of high-temperature superconductor nano-structured array

A nanostructure, high-temperature superconducting thin film technology, applied in the direction of nanostructure manufacturing, superconductor element usage, superconducting/high-conducting conductors, etc., can solve the problems of serious diffusion and the inability to directly prepare high-temperature superconducting thin films, etc. The effect of growth control

Inactive Publication Date: 2008-12-10
BEIJING NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the diffusion between it and high-temperature superconducting materials is serious, and high-temperature superconducting thin films cannot be directly prepared on sapphire substrates.

Method used

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  • Preparation method of high-temperature superconductor nano-structured array
  • Preparation method of high-temperature superconductor nano-structured array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) CeO on sapphire 2 Fabrication of buffer layer nanostructures

[0029] ① Deposition: using pulsed laser deposition method on the R surface sapphire [Al 2 o 3 (1 1 02)] CeO growth on single crystal substrate 2 buffer layer ultra-thin film; the CeO 2 The film deposition rate was 0.05 nm per laser pulse, the CeO 2 The thickness of the film is controlled at 2nm, and the prepared CeO 2 Film samples are "as-grown" film samples;

[0030] ②Annealing: The "grown" thin film sample is introduced into the annealing chamber under (ultra) high vacuum, flowed with oxygen, annealed in situ at 1050°C for 60 minutes, and then cooled to room temperature to obtain CeO 2 a substrate for a nanostructured buffer layer;

[0031] 2) Interfacial self-assembly growth of nanostructures of YBCO high temperature superconducting materials

[0032] ① Deposition: then with CeO 2 The sapphire substrate of the nanostructure buffer layer is introduced into the pulsed laser deposition cavity un...

Embodiment 2

[0041] 1) CeO on sapphire 2 Fabrication of buffer layer nanostructures

[0042] ① Deposition: using pulsed laser deposition method on the R surface sapphire [Al 2 o 3 (1 1 02)] CeO growth on single crystal substrate 2 buffer layer ultra-thin film; the CeO 2 The film deposition rate was 0.02 nm per laser pulse, the CeO 2 The thickness of the film is controlled at 10nm, and the prepared CeO 2 Film samples are "as-grown" film samples;

[0043] ②Annealing: The "grown" thin film sample is introduced into the annealing chamber under (ultra) high vacuum, flowed with oxygen, annealed in situ at 1400°C for 10 minutes, and then cooled to room temperature to obtain CeO 2 a substrate for a nanostructured buffer layer;

[0044] 2) Interfacial white assembly growth of nanostructures of YBCO high temperature superconducting materials

[0045] ① Deposition: then with CeO 2 The sapphire substrate of the nanostructure buffer layer is introduced into the pulsed laser deposition cavity ...

Embodiment 3

[0054] 1) Preparation of nanostructure of YSZ buffer layer on sapphire

[0055] ① Deposition: using pulsed laser deposition method on the R surface sapphire [Al 2 o 3 (1 1 02)] growing a YSZ buffer layer ultra-thin film on a single crystal substrate; the deposition rate of the YSZ film is 0.04nm per laser pulse, and the thickness of the YSZ film is controlled at 10nm, and the prepared CeO 2 Film samples are "as-grown" film samples;

[0056] ②Annealing: Put the "grown" thin film sample into the fiber resistance furnace, introduce flowing oxygen, anneal at 1250°C for 30 minutes, and then cool to room temperature to prepare a substrate with a YSZ nanostructure buffer layer;

[0057] 2) Interfacial self-assembly growth of nanostructures of YBCO high temperature superconducting materials

[0058] ① Deposition: Utilize the pulsed laser deposition method to grow a YBCO high temperature superconducting material film on a sapphire substrate with a YSZ nanostructure buffer layer; th...

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Abstract

The invention provides a method for preparing a high temperature superconducting nano structure array, comprising the following steps that: methods such as the pulse laser precipitation method are used, a CeO2 or YSZ buffer layer ultrathin membrane is grown on a monocrystalline substrate; the prepared CeO2 or YSZ membrane sample is a 'growth state' membrane sample; the 'growth state' membrane sample is made into a substrate with the CeO2 or YSZ nano structure buffer layer; and a high temperature superconducting membrane is grown on the substrate with the CeO2 or YSZ nano structure buffer layer by the methods such as the pulse laser precipitation method. The invention provides a simple and feasible experimental method to prepare the buffer layer, the high temperature superconducting nano structure and the array thereof, and realizes the controllable growth of the buffer layer, the high temperature superconducting nano structure and the array thereof.

Description

technical field [0001] The invention relates to a preparation method of a high-temperature superconductor nanostructure array. Background technique [0002] The problem of high-temperature superconductivity has been accumulated through many years of experimental and theoretical research, and is currently in a period of research summary and research direction change in theory, experiment, and simulation. A relatively new and feasible method to study the microscopic mechanism of high-temperature superconductivity is to study high-temperature superconductors at the microscopic scale, and conduct parameter-controllable experiments on structures with only a few cell widths and a few atomic layer thicknesses. Like other solid materials, when the size of high-temperature superconductors enters the nanometer scale, their physical properties will change greatly. Several important and fundamental physical questions are: Do high-temperature superconductors still maintain the original ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B23/02H01B12/06B82B3/00C23C14/08C23C14/22
CPCY02E40/60
Inventor 聂家财
Owner BEIJING NORMAL UNIVERSITY
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