Novel avalanche-diode photoelectric detector and preparation method thereof
An avalanche diode, photodetector technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effect of reducing potential barriers, improving absorption efficiency, and reducing production costs
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0035] The preparation method of the novel avalanche diode photodetector includes the following steps:
[0036] 1) Clean the single crystal substrate 13, remove the dirt particles and surface organic matter on the surface of the single crystal substrate 13, and use a spin dryer to spin dry;
[0037] 2) Using plasma enhanced chemical vapor deposition, molecular beam epitaxy, or metal organic compound chemical vapor deposition to epitaxially grow a 10-200nm thick metal multifunctional layer 14 on the front surface of the single crystal substrate 13, wherein the epitaxial growth temperature 750-1150℃;
[0038] 3) A 1500-3000nm thick InGaAs absorption layer 15 is epitaxially grown on the metal multifunctional layer 14 by the metal organic compound chemical vapor deposition method, and the epitaxial growth temperature is controlled at 900-1200°C;
[0039] 4) A 150-300nm thick P-type heavily doped InGaAs layer 16 is epitaxially grown on the InGaAs absorption layer 15 by metal organic chemic...
Example Embodiment
[0044] Example 1
[0045] The preparation method of the novel avalanche diode photodetector includes the following steps:
[0046] 1) Use a standard cleaning process to clean the Si single crystal substrate, remove the dirt particles and surface organic matter on the substrate surface, and use a spin dryer to spin dry;
[0047] 2) Using MOCVD to epitaxially grow a 20nm thick metal Al multifunctional layer on the front side of the Si single crystal substrate, the epitaxial growth temperature is 750°C;
[0048] 3) Using MOCVD to epitaxially grow a 2000nm InGaAs absorption layer on the metal Al multifunctional layer, and the growth temperature is controlled at 1050°C;
[0049] 4) Using MOCVD to epitaxially grow a layer of 300nm P-type heavily doped InGaAs on the InGaAs absorption layer, the growth temperature is controlled at 1050°C, and the doping element is Si;
[0050] 5) Use an ion implanter to uniformly implant ions on the back of the single crystal substrate, that is, the surface of t...
Example Embodiment
[0055] Example 2
[0056] The preparation method of the novel avalanche diode photodetector includes the following steps:
[0057] 1) Use a standard cleaning process to clean the InP single crystal substrate, remove the dirt particles and surface organic matter on the substrate surface, and use a spin dryer to spin dry;
[0058] 2) Using MOCVD to epitaxially grow a 20nm thick metal Au multifunctional layer on the front side of the InP single crystal substrate, the epitaxial growth temperature is 750℃;
[0059] 3) Using MOCVD to epitaxially grow a 2000nm InGaAs absorption layer on the metal Au multifunctional layer, and the growth temperature is controlled at 1050℃;
[0060] 4) Using MOCVD to epitaxially grow a layer of 300nm P-type heavily doped InGaAs on the InGaAs absorption layer, the growth temperature is controlled at 1050°C, and the doping element is Si;
[0061] 5) Use an ion implanter to uniformly implant ions on the back of the single crystal substrate, that is, the surface of t...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap