Black phosphorus film as well as preparation method and application thereof

Abstract

The invention relates to the technical field of two-dimensional materials, in particular to a preparation method of a black phosphorus film. The preparation method is characterized in that a growth substrate, a phosphorus-containing precursor and a mineralizer are placed in a vacuum closed reaction chamber, wherein the growth substrate and the phosphorus-containing precursor are placed in different areas in the vacuum closed reaction chamber; the reaction chamber is heated and subjected to heat preservation, so that the mineralizer reacts with part of phosphorus-containing gas from the phosphorus-containing precursor, and an induced nucleating point or an induced nucleating layer for inducing black phosphorus crystallization is formed on the growth substrate; and the temperature of the reaction chamber is reduced, the phosphorus-containing gas is deposited on the growth substrate and epitaxially grows under the induction of the induction nucleating point or the induction nucleating layer to form the black phosphorus film. The black phosphorus film has high quality, high crystallinity and strong repeatability, is suitable for large-area and batch production of the black phosphorus film, and meets the industrial requirements in practical application.

Description

technical field [0001] The invention relates to the technical field of two-dimensional materials, in particular to a black phosphorus film, its preparation method and application. Background technique [0002] In recent years, two-dimensional materials have attracted widespread attention and research boom in academia and industry due to their excellent properties. Among them, graphene has excellent mechanical, optical, thermal and electrical properties, so graphene has great application potential in many fields such as electronics, sensing, energy storage, optoelectronics, and semiconductors. However, graphene also has some shortcomings. Since the band gap of graphene is zero, its application in fields such as semiconductor logic devices and photodetection is limited. To address this issue, scientists have developed other 2D materials such as transition metal dichalcogenides (TMDCs), including MoS 2 、WSe 2 、WS 2 Wait. Two-dimensional TMDCs materials have a bandgap width...

AI Technical Summary

Problems solved by technology

The mechanical exfoliation method is to separate the black phosphorus nanosheets from the black phosphorus crystal by applying mechanical force (friction force, pulling force, etc.) to the black phosphorus block. This method is simple and easy, but the thickness and size of the black phosphorus film cannot be controlled. , low preparation efficiency [L.Li, et.al, Nat.Nanotechnol.2014,9,372.]

The liquid phase dispersion method is to disperse black phosphorus crystals by means of ultrasound, centrifugation, etc. to prepare black phosphorus nanosheets [P.Yasaei, et.al, Adv. Mater., 2015, 27:1887-1892.] [D. et al.Nat.Commun.,2015,6:8563], this method also has problems such as difficulty in controlling the size and thickness of black phosphorus

Plasma etching realizes the thinning of black phosphorus through the reaction of plasma groups and phosphorus atoms to generate volatile products [Jiajie Pei, et al. Nat. Commun., 2016, 7: 10450.], but the physical Bombardment will cause damage to black phosphorus, and residual chemical impurities will introduce pollution and affect the performance of black phosphorus

The above methods are difficult to achieve large-scale preparation and industrialization of black phosphorus materials and devices

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