Preparation method of epitaxial material of silicon-based nanometer laser array with electrically-injected long wavelength

Abstract

The invention provides a preparation method of an epitaxial material of a silicon-based nanometer laser array with electrically-injected long wavelength. The preparation method comprises the steps ofS1, fabricating a nanoscale pattern mask on a single-crystal silicon substrate by a plasma enhanced chemical vapor deposition (PECVD) method, a dry etching technology and a wet etching technology; andS2, sequentially fabricating an InP low-temperature nucleation layer, an n-InP high-temperature buffer layer, a dislocation blocking layer, an n-type limitation layer, a lower waveguide layer, a quantum-well active region, an upper waveguide layer, a p-type limitation layer and a p-type ohmic contact layer on the pattern mask by a metal organic chemical vapor deposition (MOCVD) method. By optimizing a two-step growth method and a selection region epitaxial condition, transmitting dislocation of a growth window region is blocked on a side wall of a silicon dioxide mask by a nanoscale silicon dioxide mask pattern substrate structure with large height-to-width ratio and fabricated on a silicon wafer; and meanwhile, a stress superlattice structure is used as a dislocation blocking structure,so that the dislocation density of an upper-layer InP material is further reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for preparing epitaxy materials for electrical injection into long-wavelength silicon-based nano-laser arrays. Background technique [0002] Moore's law in microelectronics states that miniaturization and large-scale integration lead to dramatic improvements in system performance while leading to dramatic reductions in cost. The results of integrated photonics efforts over the past few decades have been far less successful than those of electronic integrated circuits (ICs). Semiconductor nanomaterials have attracted great attention due to their applications in various fields such as optical communication, quantum communication, energy harvesting, medicine and biometrics. Among them, nanostructures containing gain materials can also be prepared into nanolasers. Compared with lasers prepared from bulk materials with the same material structure, the geometric ...

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Problems solved by technology

[0005] The present invention provides a method for preparing an epitaxial material of an electrical injection long-wavelength silicon-based nanolaser array that overcomes the above problems or at least partially solves the above problems, and solves the problems caused by differences in crystal lattice, thermal expansion coefficient, and polarity in the prior art. A large number of defects appear in the III-V semiconductor materials directly epitaxy on silicon, which seriously affects the crystal quality of the epitaxial layer and limits the performance and stability of subsequent devices.

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