Preparation method of silicon nanostructure and laser

Abstract

The invention provides a preparation method of a silicon nanostructure and a laser. The preparation method comprises the following steps: forming a photoresist layer with an etched pattern on a substrate; sequentially evaporating a chromium mask layer and an aluminum mask layer on the photoresist layer; stripping the photoresist layer; and etching the substrate according to the patterns of the chromium mask layer and the aluminum mask layer, and sequentially removing the aluminum mask layer and the chromium mask layer to obtain the double-silicon-line structure containing the nano slit. According to the preparation method, the double-silicon-line structure containing the nano slit can be prepared, the manufacturing process is simple, when the outer layer is coated with the thin film containing the gain material, the optical characteristic of the structure shows the performance of laser, and the structure can be used for a nano laser. The invention further provides a laser with the double-silicon-line structure.

Description

technical field [0001] The disclosure relates to the technical field of nanostructure preparation, in particular to a method for preparing a silicon nanostructure and a laser. Background technique [0002] With the development of microelectronics technology and the further expansion of Moore's Law, devices are developing towards miniaturization and miniaturization. The miniaturization of devices largely depends on the continuous development of micro-nano processing technology. For various bulk silicon MEMS devices, the widespread adoption and development of silicon dry etching technology is crucial to the miniaturization of devices, including high aspect ratio dry etching technology, nanoscale etching technology, etc. Nano-scale etching technology is a key processing step of nano-devices, and its related nano-scale mask processing and stripping technology directly determines the nano-size of the device to be processed. [0003] At present, there are mainly two methods for m...

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Problems solved by technology

[0003] At present, there are mainly two methods for making nano-sized silicon structures. One is bottom-up, that is, using silicon epitaxial growth technology to grow a silicon structure that meets the requirements on a substrate with a photoresist as a mask. The quality of silicon grown by this technology needs to be improved; the second is the more commonly used silicon etching technology using a mask. The key to this technology is to manufacture a mask that meets the requirements of nanometer size.

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