Semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles

A nanoparticle, dispersed liquid crystal technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of polymer-dispersed liquid crystal structure damage, inability to prepare random lasers, and the luminous band is not easy to change. , to achieve the effect of broad commercialization prospects, less harsh preparation conditions, and short preparation cycle

Active Publication Date: 2020-03-27
WUYI UNIV
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of dye-doped polymer-dispersed liquid crystal random lasers are: high laser emission threshold, wide full width at half maximum, poor photostability, complex synthesis process, difficult to change light-emitting band, long production cycle and high cost; and perovskite quantum dots doped The disadvantages of the heteropolymer dispersed liquid crystal structure are: on the one hand, because the perovskite quantum dots are poorly dispersed in the polymer and have a certain destructive effect on the polymer dispersed liquid crystal structure, under the pumping action of the pulsed laser , less stable than other gain media
Random lasers cannot be fabricated at concentrations dispersible in polymer-dispersed liquid crystal structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles
  • Semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles
  • Semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A polymer-dispersed liquid crystal doped with semiconductor quantum dots containing Ag nanoparticles, prepared from the following components in parts by mass:

[0041]

[0042] Wherein, the nematic liquid crystal includes the following components in parts by mass:

[0043]

[0044]

[0045] The semiconductor quantum dots are ZnCdSeS / ZnS semiconductor quantum dots.

[0046] The particle size of the Ag nanoparticles was 80 nm.

[0047] The above-mentioned semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles is prepared by the following method:

[0048] (1) Nematic liquid crystal, photosensitive polymer polymethyl methacrylate, ZnCdSeS / ZnS semiconductor quantum dots and photoinitiator phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide were heated at 50°C Stir in the dark for 5 minutes to form a mixed solution, then add Ag nanoparticles with a particle size of 80 nm into the mixed solution, perform ultrasonic dispersion for 1...

Embodiment 2

[0059] A semiconductor quantum dot-doped polymer-dispersed liquid crystal with Ag nanoparticles as a scatterer, prepared from the following components in parts by mass:

[0060]

[0061] Wherein, the nematic liquid crystal includes the following components in parts by mass:

[0062]

[0063] The semiconductor quantum dots are ZnCdSeS / ZnS semiconductor quantum dots.

[0064] The particle diameter of the Ag nanoparticles was 50 nm.

[0065] The above-mentioned semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles is prepared by the following method:

[0066] (1) Stir nematic liquid crystal, photosensitive polymer polymethyl acrylate, ZnCdSeS / ZnS semiconductor quantum dots and photoinitiator 2-hydroxy-methylphenylpropan-1-ketone at 50°C in the dark for 5 minutes to form a mixed solution , and then Ag nanoparticles with a particle size of 50 nm were added to the mixed solution, followed by ultrasonic dispersion for 1 min, and then mec...

Embodiment 3

[0071] A polymer-dispersed liquid crystal doped with semiconductor quantum dots containing Ag nanoparticles, prepared from the following components in parts by mass:

[0072]

[0073] Wherein, the nematic liquid crystal includes the following components in parts by mass:

[0074]

[0075] The semiconductor quantum dots are ZnCdSeS / ZnS semiconductor quantum dots.

[0076] The particle size of the Ag nanoparticles was 20 nm.

[0077] The above-mentioned semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles is prepared by the following method:

[0078] (1) Stir nematic liquid crystal, photosensitive polymer polyaminoacrylate, ZnCdSeS / ZnS semiconductor quantum dots and photoinitiator benzoin dimethyl ether at 50°C for 5min in the dark to form a mixed solution, and then mix the particles with a particle size of 20nm After the Ag nanoparticles were added into the mixed solution, ultrasonic dispersion was performed for 1 min, and then me...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
wavelengthaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nanoparticles and a preparation method thereof. The semiconductor quantum dot doped polymer dispersed liquid crystal containing the Ag nanoparticles is prepared from the following components in parts by mass: 1 to 5 parts of semiconductor quantum dots, 20 to 74 parts of a photosensitive polymer,20 to 78 parts of nematic liquid crystal, 1-5 parts of a photoinitiator, and 0.5 to 1.5 parts of Ag nano particles. The invention also relates to an application of the semiconductor quantum dot dopedpolymer dispersed liquid crystal containing the Ag nanoparticles in a random laser. The semiconductor quantum dot doped polymer dispersed liquid crystal containing the Ag nanoparticles has the advantages that the raw materials are simple and easy to obtain;, and the cost is low; the obtained random laser has the advantages of short preparation period, simple preparation process, easy regulation and control of emission wavelength, low production cost, higher intensity of emitted light, low threshold value and the like; and the semiconductor quantum dot doped polymer dispersed liquid crystal containing the Ag nanoparticles has a wide commercial application prospect.

Description

technical field [0001] The invention belongs to the field of liquid crystals, in particular to a semiconductor quantum dot-doped polymer-dispersed liquid crystal containing Ag nanoparticles and a preparation method thereof. The invention also relates to the application of a semiconductor quantum dot doped polymer dispersed liquid crystal containing Ag nano particles in a random laser. Background technique [0002] Laser technology has been widely used in many fields such as industry, medical treatment and communication. The core components of random lasers include three elements: pump source, working medium and resonant cavity. The resonant cavity selects the light with a certain frequency and the same direction as the most preferential amplification, and suppresses the light of other frequencies and directions to form a standing wave oscillation, and finally emits in the form of laser light. Random lasers use strongly scattering, disordered, and non-periodic media as reso...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/20B82Y30/00
CPCB82Y30/00H01S3/20
Inventor 曹明轩乐庆胜王志文杜大明张彦军王颖唐衡云
Owner WUYI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap