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Molecular beam epitaxy growing method of high-speed vertical-cavity surface-emitting laser

A vertical cavity surface emission, molecular beam epitaxy technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of modulation doping discount, non-radiative recombination increase, and interband absorption enhancement, etc., to reduce the impact, Reduced spread, reduced effect of nonlinear gain compression

Active Publication Date: 2016-02-17
WUHAN TELECOMM DEVICES
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Problems solved by technology

However, modulation doping in the active region will lead to enhanced interband absorption and increased non-radiative recombination, resulting in greater optical loss, which greatly reduces the effect of modulation doping

Method used

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  • Molecular beam epitaxy growing method of high-speed vertical-cavity surface-emitting laser
  • Molecular beam epitaxy growing method of high-speed vertical-cavity surface-emitting laser

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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with specific embodiments and accompanying drawings. Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the technical solution of the present invention, and should not be construed as limiting the present invention.

[0019] In the description of the present invention, the orientation or positional relationship indicated by the terms "inner", "outer", "longitudinal", "transverse", "upper", "lower", "top", "bottom" etc. are based on the drawings The orientations or positional relationships shown are only for the convenience of describing the invention and do not require ...

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Abstract

The invention provides a molecular beam epitaxy (MBE) growing method of a high-speed vertical-cavity surface-emitting laser. The method comprises the steps that deoxidation pretreatment is conducted on a GaAs substrate, and epitaxial growth of a GaAs buffer layer, a lower DBR, an active region, an oxidation confinement layer and an upper DBR is sequentially achieved; in the growth process, the active region is clamped between the upper DBR and the lower DBR, and a delta-doping method is adopted by the potential barrier middle position of the active region, wherein a doping source adopts carbon (C), and growth is stopped for a period of time under the protection of As after delta-doping is completed. By means of the method, the technical problems of reducing a threshold, increasing differential gain and reducing nonlinear gain compression are solved, and the good effects of reducing optical losses, decreasing line width and increasing output power and intrinsic bandwidth are achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to providing a molecular beam epitaxial growth method of a high-speed vertical cavity surface emitting laser (VCSEL). Background technique [0002] Today, with the rapid expansion of mobile terminals, communication technology continues to expand to the field of short-distance data transmission to meet the requirements of data centers and supercomputers. There is tremendous pressure on transfer and processing rates and to reduce energy consumption. The vertical cavity surface emitting semiconductor laser (VCSEL) has a very short resonant cavity, which is easy to realize dynamic single longitudinal mode operation, and also can achieve extremely low threshold current lasing because of the microcavity effect; the circular or square active region cross section can obtain good The beam distribution has the characteristics of small divergence angle and easy coupling with opti...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/343
CPCH01S5/183H01S5/343
Inventor 李密锋汤宝
Owner WUHAN TELECOMM DEVICES
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