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194results about How to "Uniform depth" patented technology

Massage chair shoulder back kneading mechanism

The invention discloses a shoulder and back kneading mechanism used in massage chairs, which comprises kneading arms and massaging wheels. The invention is characterized in that the shoulder and back kneading mechanism is also provided with an upper swing arm, a lower swing arm, a swing arm connecting rod and springs. The kneading arm comprises an inner kneading arm and an outer kneading arm which are integrated into a whole through screws; the upper swing arm is movably connected with the lower swing arm; the upper swing arm and the lower swing arm are connected with the kneading arm through crank screws; the swing arm connecting rod is connected with the kneading arm; the springs are respectively connected with the kneading arm and the lower swing arm; the kneading arm, the swing arm connecting rod, the upper swing arm and the lower swing arm form into a linkage mechanism. The depth and distance in vertical direction of the upper massage wheel and the lower massage wheel of the invention can be adapted freely according to the back curve of human body. The massage depth is uniform, therefore, the massage wheels more perfectly simulate massage effects of a real person and cause people feel more comfortable; the springs has buffer effects to massage strength and massage wheel speed, thus making the massage operation be more gentle. Besides, the massage effects are especially suitable for middle-aged and elder people.
Owner:IREST HEALTH TECH CO LTD

Gas plasma sulfurizing process

InactiveCN101956155AMeet technical quality requirementsEvenly distributedSolid state diffusion coatingWind drivenElectrolysis
The invention discloses a gas plasma sulfurizing process, which belongs to the technical field of surface heat treatment. In the process, a steel workpiece is placed in a sealed sulfurizing furnace with direct-current high voltage and high vacuum, then an appropriate amount of carrier gasses such as hydrogen gas, argon gas, ammonia gas and the like, and hydrogen sulfide are introduced into the furnace to form a sulfurizing atmosphere. Those gases are split into plasma states of nitrogen, hydrogen, argon and sulfur after entering the sulfurizing furnace and dash against the surface of the steel workpiece positioned on a negative plate to ensure that the temperature of the workpiece is raised, wherein sulfur ions infiltrate into the surface of a component to form ferrous sulfide which covers the whole surface of the component to fulfill the aim of sulfurizing. The process has the advantages of no pollution, low cost and high sulfurizing quality, overcomes the defects of serious pollution and high cost of the conventional electrolytic sulfurizing, and also overcomes the defect of low quality of plasma sulfurizing performed by using solid sulfur on the market at present. Through sulfurizing treatment, the mechanical life of a mechanical workpiece can be improved by 2 to 3 times, and the process has obvious economical and social benefits and extensive development prospect when applied to an automobiles, a train, a wind-driven generators, a petroleum machinery and a rolling machine.
Owner:BEIJING TIANMA BEARING CO LTD

Formation method of flash memory storage unit

The invention relates to a formation method of a flash memory storage unit. The formation method comprises the following steps: providing a plurality of batches of semiconductor structures, wherein each semiconductor structure comprises a substrate, a tunneling oxide layer positioned on the surface of the substrate, a floating gate layer positioned on the surface of the tunneling oxide layer, a sacrificial layer positioned on the surface of the floating gate layer, and a mask layer positioned on the surface of the sacrificial layer, and the mask layer is exposed out of partial surface of the sacrificial layer; etching sacrificial layers and partial floating gate layers in each batch in sequence with an anisotropic dry method by taking a mask layer as a mask, and forming first openings in the sacrificial layers and the floating gate layers in each batch, wherein a determination method of the etching time of a batch to be etched comprises obtaining the etching time of the batch to be etched by the thickness of the sacrificial layer of a batch prior to the batch to be etched, the etching thickness of the floating gate layer of the batch prior to the batch to be etched, and the thickness of the sacrificial layer of the batch to be etched. According to the method, the top sizes of bulges on the top surface of the floating gate layer of each batch are accurate and uniform, so that the erasing performance of the flash memory storage unit is improved.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Positioning scaffold for building wall

The invention belongs to the technical field of building construction, and particularly relates to a positioning scaffold for a building wall. The positioning scaffold comprises a bottom plate, wherein two first mounting plates are in sliding fit with the bottom plate; positioning mechanisms are mounted on the outer side surfaces of the first mounting plates and the upper surface of the bottom plate; a first rack and guide rods are horizontally mounted between the first mounting plates; a mounting seat is in sliding fit with the guide rods; a driving wheel is rotationally mounted on the rear end surface of the mounting seat; two limiting blocks are in sliding fit with the front end surface of the mounting seat; second racks and third racks are in sliding fit with the two sides of the limiting blocks; gears are rotationally mounted in the limiting blocks, and knobs and clamping blocks are mounted on the surfaces of the limiting blocks; and limiting plates are mounted at the end parts ofthe second racks and the third racks. When the positioning scaffold for the building wall is used for attaching wallboards to the outer side surface of the building wall, it can be guaranteed that the width and depth of a gap between every two adjacent wallboards are uniform, and therefore the gaps can be fully filled with joint mixtures conveniently.
Owner:TONGZHOU CONSTR GENERAL CONTRACTING GROUP +1

Method of forming metal lands at the M0 level with a non selective chemistry

The starting structure consists of a silicon substrate having diffused regions formed therein and gate conductor stacks formed thereupon that is passivated by a TEOS layer as standard. At a further stage of the wafer fabrication process, contact holes exposing some diffused regions and top of gate conductor stacks have been formed. At least one contact hole exposing a diffused region has been filled with doped polysilicon and the structure has been coated with a layer of an anti-reflective material (ARC) then, with a patterned mask to expose the ARC layer at the contact holes locations. The process improvement essentially consists in the use of a non selective chemistry which etches the doped polysilicon, the ARC and TEOS materials at substantially the same rate in a RIE etcher. A NF3/CHF3 gas mixture with a 23/77 ratio is adequate in that respect. The etch time duration is controlled first by an optical etch end-point detection system adapted to detect the signal transition at the TEOS layer exposure and then by an interferometric etch endpoint detection system to monitor the etched thickness to accurately stop when the selected depth for the M0 land recesses is reached. Finally, said recesses are filled with a metal (e.g. tungsten) as standard to produce the desired M0 metal lands.
Owner:IBM CORP

Marble pillar cutter

The invention provides a marble pillar cutter, belongs to the technical field of a machine tool, and solves the problems that an existing natural stone marble pillar can be manually processed. The marble pillar cutter comprises a frame and a cross beam, wherein the frame is fixed with a hand-piece component with a chuck and a first drive device capable of driving the chuck to rotate, and a central spindle of the chuck is horizontally arranged; the frame is provided with an ejector pin which is relative to the chuck, the cross beam is located above the hand-piece component, the two ends of the cross beam and the frame are connected with vertically arranged first guide rails and the frame is provided with a second driving device capable of driving the cross beam to do a lifting motion; the cross beam is provided with a cutting blade mounting disc and a power head device capable of moving horizontally along the cross beam. According to the marble pillar cutter provided by the invention, a channel of a glossy marble pillar can be automatically processed, and outer flanks can be polished; furthermore, by processing the marble pillar processed by the marble pillar cutter provided by the invention, the processing efficiency can be significantly improved, the skill requirements on workers can be reduced, and the production cost can be reduced.
Owner:ZHEJIANG CHANGZHI MACHINERY

Method for producing frosted glass

The invention relates to a method for producing frosted glass, which comprises the following steps: firstly, selecting original white glass sheets, jointing the two sheets, and sealing four edges by tapes; putting the glass into a weak acid pool for soaking for 2 minutes; conveying the glass into a corrosion pool for frosting; clearing the frosting liquid after the glass is frosted, and drying the glass; removing the sealing tapes at the four edges of the glass; then, adopting a silk screen to print the preliminarily designed glass pattern on one surface, air-drying the glass for 2 hours, andthen, conveying the glass into a dryer for drying; pasting a protective film on the glass surface which is not printed with the pattern; scrubbing the surface which is printed with the glass pattern with weak acid liquid; soaking the glass into the corrosion liquid for 80-120 minutes; putting the glass into a sodium hydroxide solution for cleaning; and then, conveying the glass into a cleaning and drying machine for cleaning and drying to obtain a finished product. The patterned glass which is produced by the method of the invention has uniform and fine etched depth, strong aesthetic feeling of the pattern, better quality, simple processing method and environment protection, and can greatly reduce the production cost in the production process.
Owner:杜广武

Method and its device for connection electric continuous electrolytic corrosion between metal belts

InactiveCN1473965AShape stableUniform widthElectrolysis componentsA-series and B-seriesEtching
The present invention provides a method for indirect-electrification-type continuous electrolytic etching of a metal strip suitable for producing a low-core-loss, grain-oriented silicon steel sheet not susceptible to the deterioration of core loss after stress-relief annealing, and an apparatus for the indirect-electrification-type continuous electrolytic etching. It is a method for indirect-electrification-type continuous electrolytic etching of a metal strip and an apparatus for the same for continuously forming grooves by indirect-electrification-type electrolytic etching on a metal strip on which an etching mask is formed in etching patterns on one or both surfaces, wherein: plural electrodes of an A series and a B series are arranged alternately, at least in a pair, in said order in the travelling direction of the metal strip so that they face the surface to be etched of the metal strip on which the etching patterns are formed; the space between the metal strip and the group of the electrodes is filled with an electrolyte; and voltage is applied across the A series and B series electrodes. Desirably, (I) a voltage application wherein an A series electrode becomes a cathode for a time period M of 3 to 10 msec. and (II) a voltage application wherein the A series electrode becomes an anode for a time period N of 4xM to 20xM msec. are repeated alternately across the A series and B series electrodes.
Owner:NIPPON STEEL CORP

Full back side contact crystalline silicon cell and preparation method thereof

The invention relates to a novel crystalline silicon cell in the field of a photovoltaic technology, and specifically relates to a full back side contact crystalline silicon cell which is prepared through combination with an ion implantation technology, and also relates to a preparation method of the cell. The full back side contact crystalline silicon cell comprises a silicon chip substrate, an anti-reflection layer, a base electrode, an emitter electrode, a metal gate line and the like. The emitter electrode and the base electrode of the full back side contact crystalline silicon cell are not disposed in the same plane, so that electrons and cavities can be considered to move to the emitter electrode and the base electrode through a quire short path, and carrier bulk recombination in the cell can be reduced; through moving the emitter electrode and the metal grate line from a front surface, i.e., a light receiving surface to a back surface, the optical loss is reduced; the emitter electrode is obtained through an ion implantation method, and the process steps are reduced compared to a conventional thermal diffusion doping method; and the front surface and the back surface are each provided with a passivation layer, and the front surface is further provided with a front surface field (FSF), so that the carrier surface recombination can be reduced, and the invention finally provides a solar cell which has the advantages of high batch production efficiency and simple technology.
Owner:DONGTAI HI TECH EQUIP TECH (BEIJING) CO LTD
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