Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electro-optic diode devices

A technology of diodes and devices, applied in the field of high-efficiency electro-optic diode devices

Active Publication Date: 2011-06-08
CAMBRIDGE ENTERPRISE LTD
View PDF1 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, there is still room for improvement in terms of the effectiveness of charge injection / transport layers chosen for LEDs (light-emitting diodes) and device stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electro-optic diode devices
  • Electro-optic diode devices
  • Electro-optic diode devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Light emitting devices to be described below use various metal oxides in mesoporous and compact forms for electron injection. It has been found that this results in high brightness COPLEDs. In one device form that has been found to be particularly effective, ZnO is used as the electron transport and injection material and MoO 3 Used as a hole injection material. In addition, the structure leaves room for the choice of component thickness and materials to enhance photonic effects.

[0034] Device structure

[0035] A schematic basic form of the device described herein is shown in figure 1 middle. The device comprises a substrate 1 (eg glass) on which is deposited a cathode structure 2 for electron transport and injection, and an anode structure 3 for hole transport and injection. The light emitting structure 4 is sandwiched between the cathode and the anode. In the devices that have been studied, the cathode, anode and light-emitting structures take the form of lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to View More

Abstract

A light emissive or photovoltaic device comprising: a cathode structure for injecting electrons, the cathode structure having one or more constituent regions; an anode structure for injecting holes, the anode structure having one or more constituent regions; and an organic light emissive component located between the anode structure and the cathode structure; a first charge transport layer located between the first electrode and the organic component and of a material having a refractive index greater than 1.85; wherein the device structure supports optical gain within the device.

Description

technical field [0001] The present invention relates to electrophotodiode devices, and particularly but not exclusively to high efficiency electrophotodiode devices having polymer and metal oxide components. Background technique [0002] Polymer-based electronics have developed rapidly over the past decade. In particular, the phenomenon of electroluminescence in conjugated semiconducting polymers has stimulated widespread interest in this field (J.H. Burroughes, D.D.C. Bradley, A.R. Brown, R.N. Marks, K. Mackay, R.H. Friend, P.L. Burns, A.B. Holmes , Nature 1990, 347, 539). Many fundamental optoelectronic devices such as lasers, polymer light-emitting diodes (PLEDs), thin-film transistors, photovoltaic devices (PVs), and optical sensors have been realized in research laboratories, and some have been incorporated into commercial applications. Examples of these devices are described in R.H.Friend, R.W.Gymer, A.B.Homes, J.H.Burroughes, R.N.Marks, C.Taliani, D.D.C. Bradley, D....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/52
CPCH01L51/5092Y02E10/50H01L51/4226H01L51/5265H01L51/422H01L51/5048H01L51/4233Y02E10/549H01L51/5234H10K30/152H10K30/151H10K50/14H10K50/171H10K50/852H10K50/818H10K30/50H10K30/15H10K50/828
Inventor R·H·弗兰德D·卡布拉B·温格H·斯奈斯M·洪松
Owner CAMBRIDGE ENTERPRISE LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com