GaN-based LED extension sheet and its preparation method

An LED epitaxial wafer and buffer layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of uneven current diffusion, affecting LED luminous efficiency and life, less hole injection, etc., to reduce interface resistance, The effect of increasing the external quantum efficiency of the LED and reducing the junction temperature of the LED

Inactive Publication Date: 2006-12-27
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The object of the present invention is to provide a GaN-based LED epitaxial wafer with a novel structure and its preparation method. The GaN-based LED epitaxial wafer replaces the p-type GaN layer with a GaP layer with a high hole concentration, which overcomes the p-type GaN hole concentration. Factors such as low and thin p-type layers lead to less hole injection under the applied voltage and uneven current diffusion, which seriously affect the luminous efficiency and life of the LED.

Method used

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  • GaN-based LED extension sheet and its preparation method
  • GaN-based LED extension sheet and its preparation method
  • GaN-based LED extension sheet and its preparation method

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Embodiment 1

[0034] The structure of the new GaN-based LED epitaxial wafer is as follows: figure 1 As shown, from bottom to top are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, n-type AlGaN:Si layer, quantum well, buffer layer, p-type GaP:Mg layer.

[0035] Its preparation method is:

[0036] 1) Use MOCVD dedicated to GaN, heat up to 1000°C and bake the substrate for 10 minutes in a hydrogen atmosphere;

[0037] 2) Lower the temperature to 480°C, and grow a GaN low-temperature buffer layer with a thickness of 30nm on the substrate;

[0038] 3) heating up to 1050° C., and growing an undoped GaN layer with a thickness of 2.0 μm;

[0039] 4) growing an n-type GaN:Si layer with a thickness of 2.0 μm at a temperature of 1050° C.;

[0040] 5) Growth of n-type Al with a thickness of 0.1 μm at a temperature of 1050°C 0.1 Ga 0.9 N: Si layer;

[0041] 6) Lower the temperature to 700°C to grow In x Ga yN / GaN multi-quantum well structure, the thickness of th...

Embodiment 2

[0049] The structure of the new GaN-based LED epitaxial wafer is as follows: figure 2 As shown, from bottom to top are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, quantum well, buffer layer, p-type GaP:Mg layer.

[0050] Its preparation method is:

[0051] 1) Use MOCVD dedicated to GaN, heat up to 1050°C and bake the substrate for 8 minutes in a hydrogen atmosphere;

[0052] 2) Lower the temperature to 510°C, and grow a GaN low-temperature buffer layer with a thickness of 25nm on the substrate;

[0053] 3) heating up to 1000° C., and growing an undoped GaN layer with a thickness of 2.5 μm;

[0054] 4) growing an n-type GaN:Si layer with a thickness of 1.0 μm at a temperature of 1000° C.;

[0055] 5) Lower the temperature to 600°C and grow an InGaN / GaN multi-quantum well structure. The thickness of the InGaN well layer is 4nm, and the thickness of the GaN barrier layer is 6nm; the In composition of the InGaN well layer is 0.25-0.5; the n...

Embodiment 3

[0062] The structure of the new GaN-based LED epitaxial wafer is as follows: figure 1 As shown, from bottom to top are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, n-type AlGaN:Si layer, quantum well, buffer layer, p-type GaP:Zn layer.

[0063] Its preparation method is:

[0064] 1) Use MOCVD dedicated to GaN, heat up to 1100°C and bake the substrate for 5 minutes in a hydrogen atmosphere;

[0065] 2) Lower the temperature to 550°C, and grow a GaN low-temperature buffer layer with a thickness of 20nm on the substrate;

[0066] 3) heating up to 1100°C, and growing an undoped GaN layer with a thickness of 1.5 μm;

[0067] 4) growing an n-type GaN:Si layer with a thickness of 3.0 μm at a temperature of 1100° C.;

[0068] 5) Growth of n-type Al with a thickness of 0.05 μm at a temperature of 1100°C 0.2 Ga 0.8 N: Si layer;

[0069] 6) Lower the temperature to 800°C and grow an InGaN / GaN multi-quantum well structure, the thickness of the InG...

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Abstract

The related GaN-base LED epitaxial sheet comprises: from bottom to top, a substrate, a n-type layer, a quantum trap, a low-temperature buffer layer, and a p-type layer as GaP layer with hole concentration as 2*1018~6*1018cm-3. This invention can reduce p-type layer resistance, and improves LED performance greatly.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a GaN-based LED epitaxial wafer and a preparation method thereof. Background technique [0002] GaN-based high-brightness light-emitting diodes (LEDs) are currently the frontier and hot spot in the global optoelectronics research and industry. The preparation of LED epitaxial wafer is the core technology of LED, which plays a major role in the performance level of LED. [0003] The preparation of GaN-based LEDs needs to go through three main steps: LED epitaxial wafer growth, LED chip preparation and LED packaging. There are many methods for growing GaN materials. There are metal organic chemical vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE), halide vapor phase epitaxy (HVPE) and so on. Among them, MOCVD is currently the only growth technology that can prepare GaN-based high-brightness LED epitaxial wafers and use them in large-scale production. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/14
Inventor 李述体范广涵
Owner SOUTH CHINA NORMAL UNIVERSITY
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