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GaN-based LED extension sheet and its preparation method

A technology of LED epitaxial wafer and confinement layer, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of uneven current diffusion and less hole injection, and achieve increased external quantum efficiency, increased recombination, and enhanced confinement effect of action

Inactive Publication Date: 2008-06-04
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of high hole concentration GaP layer overcomes the shortcomings of low hole concentration of p-type GaN and thin p-type layer of the original GaN-based LED, which lead to less hole injection and uneven current diffusion under the applied voltage.

Method used

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  • GaN-based LED extension sheet and its preparation method
  • GaN-based LED extension sheet and its preparation method
  • GaN-based LED extension sheet and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The structure of the new GaN-based LED epitaxial wafer is as follows: figure 1As shown, from bottom to top are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, n-type AlGaN:Si layer, quantum well, n-type GaN confinement layer, buffer layer, p-type GaP : Mg layer.

[0037] Its preparation method is:

[0038] 1) Use MOCVD dedicated to GaN, heat up to 1000°C and bake the substrate for 10 minutes in a hydrogen atmosphere;

[0039] 2) Lower the temperature to 480°C, and grow a GaN low-temperature buffer layer with a thickness of 30nm on the substrate;

[0040] 3) heating up to 1050° C., and growing an undoped GaN layer with a thickness of 2.0 μm;

[0041] 4) growing an n-type GaN:Si layer with a thickness of 2.0 μm at a temperature of 1050° C.;

[0042] 5) Growth of n-type Al with a thickness of 0.1 μm at a temperature of 1050°C 0.1 Ga 0.9 N: Si layer;

[0043] 6) Lower the temperature to 700°C to grow In x Ga y N / GaN multi-quantum we...

Embodiment 2

[0051] The structure of the new GaN-based LED epitaxial wafer is as follows: figure 1 As shown, from bottom to top are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, n-type AlGaN:Si layer, quantum well, p-type GaN confinement layer, buffer layer, p-type GaP : Mg layer.

[0052] Its preparation method is:

[0053] 1) Use MOCVD dedicated to GaN, heat up to 1000°C and bake the substrate for 10 minutes in a hydrogen atmosphere;

[0054] 2) Lower the temperature to 480°C, and grow a GaN low-temperature buffer layer with a thickness of 30nm on the substrate;

[0055] 3) heating up to 1050° C., and growing an undoped GaN layer with a thickness of 2.0 μm;

[0056] 4) growing an n-type GaN:Si layer with a thickness of 2.0 μm at a temperature of 1050° C.;

[0057] 5) Growth of n-type Al with a thickness of 0.1 μm at a temperature of 1050°C 0.1 Ga 0.9 N: Si layer;

[0058] 6) Lower the temperature to 700°C to grow In x Ga y N / GaN multi-quantum w...

Embodiment 3

[0066] The structure of the new GaN-based LED epitaxial wafer is as follows: figure 2 As shown, from bottom to top are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, quantum well, n-type InGaN confinement layer, buffer layer, p-type GaP:Mg layer.

[0067] Its preparation method is:

[0068] 1) Use MOCVD dedicated to GaN, heat up to 1050°C and bake the substrate for 8 minutes in a hydrogen atmosphere;

[0069] 2) Lower the temperature to 510°C, and grow a GaN low-temperature buffer layer with a thickness of 25nm on the substrate;

[0070] 3) heating up to 1000° C., and growing an undoped GaN layer with a thickness of 2.5 μm;

[0071] 4) growing an n-type GaN:Si layer with a thickness of 1.0 μm at a temperature of 1000° C.;

[0072] 5) Lower the temperature to 600°C, grow an InGaN / GaN multi-quantum well structure, the thickness of the InGaN well layer is 4nm, the thickness of the GaN barrier layer is 6nm, the In composition of the InGaN well...

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Abstract

The related GaN-base LED epitaxial sheet comprises: from bottom to top, a substrate, a n-type layer, a quantum trap, a limit layer, a buffer layer, and a p-type layer as GaP layer with hole concentration as 2*1018~6*1018cm-3. This invention can reduce p-type layer resistance, overcomes the defects of small GaP forbidden band and limit effect, and improves the GaN-base LED performance obviously.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a GaN-based LED epitaxial wafer with a novel structure and a preparation method thereof. Background technique [0002] GaN-based high-brightness light-emitting diodes (LEDs) are currently the frontier and hot spot in the global optoelectronics research and industry. The preparation of GaN-based LEDs needs to go through three main steps: LED epitaxial wafer growth, LED chip preparation and LED packaging. Among them, the preparation of LED epitaxial wafer is the core technology of LED, which plays a major role in the performance level of LED. [0003] The existing GaN-based LED epitaxial wafers all use GaN as the main body of the p-type layer, and sometimes a very thin AlGaN layer is grown before the growth of p-type GaN to increase the confinement of carriers. Currently GaN-based LEDs and lasers (LD) are using this structure. The problems of p-type GaN are ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/04
Inventor 李述体范广涵
Owner SOUTH CHINA NORMAL UNIVERSITY
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