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P type LED epitaxy structure, growing method and LED display device

A technology of epitaxial structure and growth method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of weak antistatic ability of GaN-based LED epitaxial wafers

Active Publication Date: 2014-10-15
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the technical problem of weak antistatic ability of GaN-based LED epitaxial wafers in the prior art, the following technical solutions are provided:

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  • P type LED epitaxy structure, growing method and LED display device
  • P type LED epitaxy structure, growing method and LED display device

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Embodiment Construction

[0027] Certain terms are used, for example, in the description and claims to refer to particular components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. In addition, the term "coupled" herein includes any direct and indirect electrical coupling means. Therefore, if it is described that a first device is coupled to a second device, it means that the first device may be directly elect...

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Abstract

The invention discloses a P type LED epitaxy structure, a growing method and an LED display device. The P type LED epitaxy structure comprises a sapphire substrate, a low-temperature gallium nitride buffer layer, a non-doped gallium nitride layer, an n type gallium nitride layer, a first barrier layer, a shallow quantum well layer, a multiple quantum well layer, an electronic barrier layer, a highly doped P type gallium nitride layer and a contact layer from top to bottom. The highly doped P type gallium nitride layer further comprises a first P type gallium nitride layer and a second P type gallium nitride layer, and the first P type gallium nitride layer and the second P type gallium nitride layer grow by respectively adopting different carrier gases. According to the P type LED epitaxy structure, the growing method and the LED display device, P-GaN of different crystal quality can be obtained, the electron limiting capability of P-GaN is enhanced, hole injection is improved, electron injection is slowed down, the polarization effect is restrained, a current is expanded, the impact to GaN-based LEDs caused by static electricity is relieved, and accordingly the anti-static capability of an epitaxial wafer is improved.

Description

technical field [0001] The present application relates to the technical field of preparation of gallium nitride-based materials in semiconductor technology, and specifically relates to a P-type LED epitaxial structure, a growth method and an LED display device. Background technique [0002] In the prior art, the so-called heteroepitaxy means that the substrate material and the epitaxial layer are different materials. The so-called gallium nitride (GaN), which is a semiconductor with a large bandgap width, belongs to the so-called wide bandgap semiconductors. It is an excellent material for microwave power transistors and a semiconductor with important application value in blue light-emitting devices. [0003] The heterogeneous epitaxial growth of gallium nitride on the sapphire substrate, due to the large lattice mismatch and the large difference in thermal expansion coefficient, will lead to high-density defects inside the grown GaN, and the P-type and N-type electrodes on...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/14H01L33/00
CPCH01L33/007H01L33/14
Inventor 向锦涛胡艳芳
Owner XIANGNENG HUALEI OPTOELECTRONICS
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