GaN-based laser with asymmetric Al component AlGaN limiting layers

Abstract

A GaN-based laser with asymmetric Al component AlGaN limiting layers comprises a GaN native substrate, an n-type GaN homoepitaxial layer, the n-type AlGaN limiting layer, an n-type GaN waveguide layer, an InGaN / lGaN quantum well active region, a p-type AlGaN electron blocking layer, a p-type GaN waveguide layer, the p-type AlGaN limiting layer, a p-type doped / p-type heavily-doped contact layer, a p-type ohmic electrode and an n-type ohmic electrode. The n-type GaN homoepitaxial layer is manufactured on the GaN native substrate, the n-type AlGaN limiting layer is manufactured on the n-type GaN homoepitaxial layer, the n-type GaN waveguide layer is manufactured on the n-type AlGaN limiting layer, the InGaN / lGaN quantum well active region is manufactured on the n-type GaN waveguide layer, the p-type AlGaN electron blocking layer is manufactured on the InGaN / lGaN quantum well active region, the p-type GaN waveguide layer is manufactured on the p-type AlGaN electron blocking layer, the p-type AlGaN limiting layer is manufactured on the p-type GaN waveguide layer, a protruding ridge is formed in the middle of the p-type AlGaN limiting layer, the p-type doped / p-type heavily-doped contact layer is manufactured on the protruding ridge of the p-type AlGaN limiting layer, the p-type ohmic electrode is manufactured on the p-type doped / p-type heavily-doped contact layer, and the n-type ohmic electrode is manufactured on the lower surface of the GaN native substrate.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a GaN-based laser with an asymmetrical Al composition AlGaN confinement layer. Background technique [0002] In semiconductor lasers, the distribution of optical field and absorption loss are the key factors affecting the laser threshold and output power. In the traditional gallium nitride laser structure, there are n-type and p-type waveguides and confinement layers on the upper and lower sides of the active region, and the n-type and p-type AlGaN confinement layers confine most of the optical field in the waveguide. However, there will still be a small part of the optical field extending into the AlGaN confinement layer, and even extending to the metal electrode regions on both sides of the laser. GaN and AlGaN materials have strong absorption caused by free carrier absorption and impurity absorption for light with a wavelength greater than the interband tra...

AI Technical Summary

Problems solved by technology

However, the tensile stress in the AlGaN confinement layer with high Al composition becomes larger, which makes the warping problem of GaN homogeneous substrate more serious

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