31 results about "Silver ion transport" patented technology

The invention provides an improved electrotransport drug delivery system for analgesic drugs, namely fentanyl and sufentanil. The fentanyl/sufentanil is provided as a water soluble salt (eg, fentanyl hydrochloride) dispersed in a hydrogel formulation for use in an electrotransport device (10). In accordance with one aspect of the invention, the concentration of fentanyl/sufentanil in the donor reservoir (26) solution is above a predetermined minimum concentration, whereby the transdermal electrotransport flux of fentanyl/sufentanil is maintained independent of the concentration of fentanyl/sufentanil in solution. In accordance with a second aspect of the present invention, the donor reservoir (26) of the electrotransport delivery device (10) is comprised of silver and the donor reservoir (26) contains a predetermined “excess” loading of fentanyl/sufentanil halide to prevent silver ion migration with attendant skin discoloration. In accordance with a third aspect of the present invention, a transdermal electrotransport delivered dose of fentanyl/sufentanil is provided which is sufficient to induce analgesia in (eg, adult) human patients suffering from moderate-to-severe pain associated with major surgical procedures.

The invention provides an improved electrotransport drug delivery system for analgesic drugs, namely fentanyl and sufentanil. The fentanyl/sufentanil is provided as a water soluble salt (eg, fentanyl hydrochloride) dispersed in a hydrogel formulation for use in an electrotransport device (10). In accordance with one aspect of the invention, the concentration of fentanyl/sufentanil in the donor reservoir (26) solution is above a predetermined minimum concentration, whereby the transdermal electrotransport flux of fentanyl/sufentanil is maintained independent of the concentration of fentanyl/sufentanil in solution. In accordance with a second aspect of the present invention, the donor reservoir (26) of the electrotransport delivery device (10) is comprised of silver and the donor reservoir (26) contains a predetermined “excess” loading of fentanyl/sufentanil halide to prevent silver ion migration with attendant skin discoloration. In accordance with a third aspect of the present invention, a transdermal electrotransport delivered dose of fentanyl/sufentanil is provided which is sufficient to induce analgesia in (eg, adult) human patients suffering from moderate-to-severe pain associated with major surgical procedures.

The invention relates to lead-free electrocondution slurry used for a crystalline silicon solar cell back electrode. The lead-free electrocondution slurry used for the crystalline silicon solar cell back electrode consists of the following components in percentage by weight: 40-70wt% of silver plating copper powder, 2-10wt% of inorganic lead-free glass powder and 25-50wt% of organic carrier, wherein the organic carrier is the mixture of solvent, thickening agent and additive, and the prepared electrocondution slurry printing back electrode has the advantages of big thickness, small bulk resistance, excellent soldering resistance, strong welding adhesive force and silver ion migration resistance. Meanwhile, after cell pieces are subjected to series welding, an assembly has the advantages of higher stability and stronger anti-aging capability.

A composition for forming a silver ion diffusion-suppressing layer includes an insulating resin and a compound including: a structure selected from the group consisting of a triazole structure, a thiadiazole structure and a benzimidazole structure; a mercapto group; and at least one hydrocarbon group optionally containing a heteroatom, with the total number of carbon atoms in the hydrocarbon group or groups being 5 or more. The composition for forming a silver ion diffusion-suppressing layer allows formation of a silver ion diffusion-suppressing layer capable of suppressing silver ion migration between metal interconnects containing silver or a silver alloy to improve the reliability on the insulation between the metal interconnects.

The invention provides an ultraviolet (UV)-curing plasma display circuit protective agent with silver ion migration resistance and a preparation method thereof. The protective agent comprises the following components by mass percent: 20-80wt% of modified (methyl) acrylic prepolymer, 10-60wt% of photoreactive monomer, 0.1-5wt% of processing aid and 0.05-1wt% of silver ion absorbent. In the preparation method, the components are fully dispersed and filtered to obtain the UV-curing plasma display circuit protective agent. The UV-curing plasma display circuit protective agent has the advantages of double synergistic effect of physical coating and silver ion chemical absorption, silver ion migration resistance, normal-temperature curing capability, high production efficiency, energy conservation, good adhesive force, good insulating property, good durability and the like, and is environment-friendly; and the protective agent can be applied to protection and insulation of a plasma display circuit as well as a thick film hybrid integrated circuit, a low noise circuit, a high-stability passive network, a high-frequency linear circuit, a high-precision linear circuit, a microwave circuit, a high-voltage circuit and the like which need to prevent silver ion migration.

The invention relates to a touch panel, comprising a metal mesh, a light transmitting plate, an optical adhesive, a film body and a glue body. The optical adhesive is bonded between the metal mesh and the light transmitting plate. The film body covers one face, far away from the light transmitting plate, of the metal mesh. The glue body surrounds the edge of the metal mesh, and is used for connecting the film body with the light transmitting plate, so that the metal mesh is sealed by the film body, the glue body and the light transmitting plate. Therefore, the metal mesh cannot be in contact with air, and silver ions are not dissociated due to the fact that silver oxide molecules on the surface of the metal mesh cannot be chemically reacted with water molecules in the air, so that the silver ion migration phenomenon of the metal mesh is effectively overcome.

The invention relates to a preparation method for a copper and silver core-shell powder electric contact material, and belongs to the technical field of electric contact material preparation. Aiming at the problem that an existing Ag/Sn2 electric contact material is overhigh in resistivity and has poor anti-arc erosion performance, the invention adopts a technical scheme that short circuiting is caused due to the fact that silver ions can easily migrate under a direct current power-on condition or a hot and humid condition, so that the surface of nanometer copper powder is plated with silver, and then ball milling is performed on the nanometer copper powder plated with the silver and ceramic fiber prepared from lanthanum nitrate, strontium nitrate, ethylene glycol and a citric acid solution to prepare a composite material, and then, the composite material is heated and fired to prepare an electric contact material; migration ability of the silver ions is reduced by compounding copper with the silver. The copper and silver core-shell powder electric contact material prepared by the preparation method disclosed by the invention has relatively high fusion welding resistance and relatively good contact performance and anti-arc erosion performance, is prolonged by 10 to 15 percent in service life, has a simple preparation process, and is green and environmental friendly.

The invention relates to a method for testing silver ion migration of conductor paste for a chip resistor. Aiming at the problems that silver ion migration is easily generated in a wet environment bysilver conductor paste in the existing electronic paste and the existing silver ion migration testing method and means are immature, the invention provides a testing method for testing silver ion migration in a solid state, which is respectively used for testing high-silver-content conductor paste and low-silver-content conductor paste. Different forms of silver ion migration under different conditions are discussed. And the silver ion migration mechanism is analyzed. Influences of electric fields, temperature, humidity, substrates and impurities on silver migration modes are discussed. Therefore, the bottleneck that the common silver ion migration test is influenced by the environment and the migration time fluctuates greatly is broken through, and the silver migration problem of the chipresistor in the use process is effectively solved.

A touch screen sensor testing circuit is connected with a DC voltage and a reference voltage, and comprises a first interface, a second interface, a combined switch, a voltage comparison module and an indicating module, wherein the first interface is used for connecting an odd number of silver paste lead wires on a touch screen sensor to the combined switch, the second interface is used for connecting an even number of silver paste lead wires on the touch screen sensor to the combined switch, and the combined switch is connected with the DC voltage, the reference voltage and the voltage comparison module; and the combined switch applies the DC voltage or the reference voltage to the touch screen sensor for detection through the first interface and the second interface and then outputs detection voltages to the voltage comparison module for comparison, and the indicating module presents an indication whether silver paste migration occurs in silver paste circuits according to comparative result of the voltage comparison module. The touch screen sensor testing circuit can test silver ion migration status between the adjacent circuits on the touch screen sensor accurately, adjusts testing electrical conditions, is high in flexibility, only needs two lead wires for wiring, and has the advantages of being simple, being high in operability and the like.

The invention discloses a transparent conductive film as well as a preparation method and application thereof, and particularly relates to a preparation method of a silver nanowire transparent conductive film. The method comprises the following steps: coating a silver nanowire dispersion liquid on the surface of a transparent substrate, and volatilizing a solvent; then coating the surface of the silver nanowire network with a silane coupling agent, soaking the silver nanowire network in an alkaline aqueous solution, preserving heat at 30-100 DEG C for 1-60 minutes, and performing in-situ hydrolytic polycondensation on the silane coupling agent to form a compact silicon dioxide coating layer on the surface of the nanowire; and finally, performing drying to obtain the silver nanowire transparent conductive film. The method is simple in process and low in cost, and the prepared silver nanowire transparent conductive film has excellent vulcanization resistance, silver ion migration resistance, acid and alkali resistance and high-temperature stability.

The invention relates to a preparation method of an antibacterial ceramic thin film and belongs to the technical field of preparation of the antibacterial ceramic thin film. Aiming at the problems that silver ions are heated to be decomposed and discolored easily and then appearance of a ceramic product is influenced due to need of high-temperature firing of an existing silver antibacterial ceramic thin film as well as the antibacterial endurance of the silver antibacterial ceramic thin film is affected by fast release of the silver ions, the antibacterial ceramic thin film is provided and is characterized in that copper and silver ions are composited, the strength of the copper and silver composite particles is enhanced through composition with polylactic acid, and by means of composition of copper and silver, the silver ion migration capacity is reduced, the silver ions are prevented from being released too fast, and the action endurance of the antibacterial ceramic thin film is enhanced. The action time of the antibacterial ceramic thin film prepared with the method is prolonged by 15%-20%, the antibacterial ratio is as high as 85%, and besides, the preparation process is simple, green, environment-friendly and pollution-free.

The invention relates to a method for manufacturing a silver paste circuit in a touch display product and the silver paste circuit, and the method comprises the steps: S1, printing a layer of insulating ink on an inductor substrate of the touch display product, and carrying out the solidification of the insulating ink, and forming an insulating ink circuit pattern layer; s2, printing silver pasteon the insulating ink circuit pattern layer and performing curing to form a silver paste circuit layer; and S3, printing a layer of insulating ink on the silver paste circuit layer and within an externally expanded preset area range, and performing curing to form an insulating ink protection layer. Silver paste is printed on the bottom-layer insulating ink; a layer of insulating ink is printed onthe silver paste; the silver paste is coated in the two layers of insulating ink; because the bottom-layer insulating ink is printed in a circuit state, the upper-layer insulating ink can better blockthe migration of silver ions, and meanwhile, the silver ions cannot migrate through the surface of the base material during migration, but an insulating oil groove is formed, so that the short-circuit difficulty between silver paste circuits is greatly increased, and the problem of short-circuit failure of a product caused by silver ion migration can be solved.

A touch screen sensor testing circuit is connected with a DC voltage, and comprises a first interface, a second interface, a self-excited oscillation module, a combined switch, a voltage comparison module and an indicating module, wherein the first interface is used for connecting an odd number of silver paste lead wires on a touch screen sensor to the combined switch, the second interface is used for connecting an even number of silver paste lead wires on the touch screen sensor to the combined switch, and the self-excited oscillation module converts the DC voltage into an AC voltage and inputs the AC voltage to the combined switch; and the combined switch applies the AC voltage or the DC voltage to the touch screen sensor for detection through the first interface and the second interface and then outputs detection voltages to the voltage comparison module for comparison, and an indication whether silver paste migration occurs in silver paste circuits is represented via the comparative result. The touch screen sensor testing circuit can test silver ion migration status between the adjacent circuits on the touch screen sensor accurately, adjusts testing electrical conditions, is high in flexibility, only needs two lead wires for wiring, and has the advantages of being simple, being high in operability and the like.

The invention provides a simulation method of a gate switch, which comprises the following steps of: establishing a two-dimensional model of the gate switch in a grid point division manner, calculating a silver atom oxidation probability, a silver ion reduction probability, a silver ion migration probability and a silver atom diffusion probability according to parameters of the two-dimensional model, and updating the occupation of the silver atoms in the two-dimensional model according to the silver atom oxidation probability, the silver ion reduction probability, the silver ion migration probability and the silver atom diffusion probability so as to realize accumulation and diffusion of the silver atoms. According to the invention, the growth evolution process of the silver conductive filament in the resistance change layer can be visually observed in the process of gating the switch by the gate, the microscopic resistance change process of the gate switch is revealed from all aspects, and the simulation accuracy of the gate switch is ensured. The invention also provides a system of the gate switch.

The embodiment of the invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a working region and a scribing region surrounding the working region, the working area comprises an active area and a passive area surrounding the active area; the semiconductor device further comprises a substrate, a plurality of semiconductor layers, a grid electrode, a grid electrode bonding disc and a shielding structure. The grid electrode bonding disc is electrically connected with the grid electrode; by additionally arranging the shielding structure, silver ions in patch silver paste in the packaging process are effectively shielded from being migrated to the bonding disc, it is guaranteed that the bonding disc and the electrode connected with the bonding disc are stable in performance, the bonding disc and the electrode connected with the bonding disc are prevented from being short-circuited with the source electrode, and it is guaranteed that the semiconductor device can work normally.

The invention discloses silver powder for a 5G filter and a production method thereof, and relates to the technical field of metal powder preparation. The silver powder is characterized by comprising the following components in parts by weight: 20-95 parts of spherical silver powder and 0-80 parts of flake silver powder, wherein the particle size of the spherical silver powder is 0.1-2 microns, the flake length of the flake silver powder is 1-10 microns, and the flake thickness is 0.1-1.0 micron. The silver powder for the 5G filter is obtained by filling silver powder with different particle size ranges and different morphologies, and has the effect of remarkably improving the compactness and the conductivity of the powder; and meanwhile, the processes of mixing, grinding and drying are improved, and the silver powder for the 5G filter obtained by the production method has the effects of high sintering activity, low silver ion mobility, high adhesive force, good shrinkage matching with a base material and excellent conductivity after being prepared into ceramic filter conductive silver paste, can be applied to industrial production, and is effectively applied to the field of 5G communication.

The embodiment of the invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a working region and a scribing region surrounding the working region, the working area comprises an active area and a passive area surrounding the active area; the semiconductor device further comprises a substrate, a plurality of semiconductor layers, at least one bonding disc and a shielding structure. The shielding structure is additionally arranged, and the shielding structure is electrically connected with the preset potential, so that silver ions in patch silver paste are effectively prevented from being migrated to the bonding disc in the packaging process, stable performance of the bonding disc and an electrode connected with the bonding disc is ensured, short circuit of the bonding disc and the electrode and a source electrode connected with the bonding disc is avoided, and the reliability of the packaging process is improved. And normal work of the semiconductor device is ensured.

The invention discloses a resistive random access memory and a preparation method, the resistive random access memory comprises a top electrode, a bottom electrode and a resistive random layer arranged between the top electrode and the bottom electrode, the resistive random layer is made of a silver imidazole complex, the chemical formula of the silver imidazole complex is Agx (MI) yZx, 1 < = x < = 2, 2 < = y < = 4, x and y are both positive integers, MI is an imidazolyl ligand, and Z is an anion capable of forming soluble salt with silver ions. According to the invention, the silver imidazole complex is used as a material for preparing the resistive layer of the resistive random access memory, and the migration range of silver ions is limited in the crystal grains of the silver imidazole complex, so that the migration distance of the silver ions is shortened, the energy consumed by the migration of the silver ions is reduced, and the operation voltage and power consumption of the resistive random access memory are reduced. Meanwhile, the migration range of the silver ions is limited by the silver imidazole complex crystal grains, so that the migration randomness of the silver ions can be effectively reduced, and the uniformity and the stability of the resistive random access memory are improved.

The invention relates to the technical field of bonding wire quality verification, and discloses a manufacturing tool for measuring the silver ion migration rate of bonding wires. The manufacturing tool comprises workbenches, the number of the workbenches is two, the two workbenches are symmetrically distributed front and back, the lower surfaces of the two workbenches are symmetrically and fixedly provided with support sheets, and the four support sheets are distributed in a rectangular shape. Limiting grooves are formed in the two sides of the two workbenches correspondingly, the limiting grooves are of up-down penetrating type structures, the two workbenches are of hollow structures with openings in the opposite sides, and a connecting plate is arranged in the two workbenches. Through the limiting grooves in the two sides of the workbenches, it is ensured that the distance between the two bonding wires is constant, so that the requirement for detection conditions is met, the structure is simple, operation is convenient, and the detection efficiency of the bonding wires is improved.