Simulation method and system of gate switch

Abstract

The invention provides a simulation method of a gate switch, which comprises the following steps of: establishing a two-dimensional model of the gate switch in a grid point division manner, calculating a silver atom oxidation probability, a silver ion reduction probability, a silver ion migration probability and a silver atom diffusion probability according to parameters of the two-dimensional model, and updating the occupation of the silver atoms in the two-dimensional model according to the silver atom oxidation probability, the silver ion reduction probability, the silver ion migration probability and the silver atom diffusion probability so as to realize accumulation and diffusion of the silver atoms. According to the invention, the growth evolution process of the silver conductive filament in the resistance change layer can be visually observed in the process of gating the switch by the gate, the microscopic resistance change process of the gate switch is revealed from all aspects, and the simulation accuracy of the gate switch is ensured. The invention also provides a system of the gate switch.

Description

Technical field [0001] The present invention relates to the field of semiconductor technologies, and more particularly to a simulation method and system of a locker switch. Background technique [0002] The new non-volatile blocking memory is considered to be one of the ideal choices of next-generation storage devices with its low power consumption and high-density integration. The maximum obstacle to realize the transformation of the array integration is the crosstalk problem caused by the sneaked current of the unselected unit during reading operation. A leakage current of the changing memory cell can be greatly suppressed by a tandem having a higher nonlinearity, and the sneaked current of the entire array is reduced. The stroner is mainly part of the lower electrode, the transformation layer, and the upper electrode part, belongs to a volatile memory. The initial state of the device is high-resistant. When the applied scan voltage value reaches the threshold voltage (device t...

AI Technical Summary

Problems solved by technology

However, there are some controversies about the understanding of the gate switch mechanism. In view of the limitations of the existing observation and characterization methods, a simulation method is needed to accurately simulate and demonstrate the ion transmission and distribution during the gate switch process.

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