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Semiconductor device and preparation method thereof

A semiconductor and device technology, which is applied in the field of semiconductor devices and their preparation, can solve the problems of semiconductor devices that cannot be used normally, short circuit, etc., and achieve the effect of avoiding short circuit, ensuring normal operation and stable performance

Pending Publication Date: 2022-07-01
DYNAX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, because the patch silver paste will cause the electrochemical migration of silver ions under the action of an electric field, the silver ions will migrate to the front of the semiconductor chip, and contact with other electrodes on the front of the semiconductor chip to cause a short circuit, resulting in the failure of the normal use of the semiconductor device.

Method used

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  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

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Embodiment Construction

[0063] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, the drawings only show some but not all structures related to the present invention.

[0064] figure 1 is a schematic structural diagram of a semiconductor device in the prior art, such as figure 1 As shown, the semiconductor device includes a source electrode 12 and a gate electrode 13 located in the active region 11, and a gate bonding pad 14 located in the passive region. The gate bonding pad 14 is electrically connected to the plurality of gate electrodes 13, and the source electrode 12 is electrically connected to the source back electrode (not shown in the figure) through vias. When the semiconductor device ...

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Abstract

The embodiment of the invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a working region and a scribing region surrounding the working region, the working area comprises an active area and a passive area surrounding the active area; the semiconductor device further comprises a substrate, a plurality of semiconductor layers, at least one bonding disc and a shielding structure. The shielding structure is additionally arranged, and the shielding structure is electrically connected with the preset potential, so that silver ions in patch silver paste are effectively prevented from being migrated to the bonding disc in the packaging process, stable performance of the bonding disc and an electrode connected with the bonding disc is ensured, short circuit of the bonding disc and the electrode and a source electrode connected with the bonding disc is avoided, and the reliability of the packaging process is improved. And normal work of the semiconductor device is ensured.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular, to a semiconductor device and a method for fabricating the same. Background technique [0002] After the semiconductor chip is prepared, the semiconductor chip needs to be packaged to form a semiconductor device. The semiconductor device is generally packaged by the patch method, and because the cost of the patch silver paste in the semiconductor device patch method is low, the patch silver paste method is generally used to connect some of the metal connection electrodes in the semiconductor device through the paste. The silver paste is electrically connected to the metal electrodes in the package casing. [0003] However, because the patch silver paste will cause the electrochemical migration of silver ions under the action of the electric field, the silver ions will migrate to the front side of the semiconductor chip, and contact with other elect...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/417H01L29/423H01L21/335H01L29/772
CPCH01L29/0603H01L29/41725H01L29/42316H01L29/772H01L29/66409
Inventor 裴轶韩啸李元
Owner DYNAX SEMICON
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