Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for testing silver ion migration of conductor paste for chip resistor

A technology of silver conductor paste and testing method, which is applied in the field of electrochemistry, can solve the problems of large fluctuations in migration time, immature silver ion migration testing methods and means, etc., and achieve short test period, small test result fluctuation, and environmental adaptability strong effect

Pending Publication Date: 2020-07-10
西安宏星电子浆料科技股份有限公司
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the defects of the above-mentioned prior art and provide a conductive paste suitable for high silver content or low silver content, which breaks through the fluctuation of migration time due to the influence of the environment during the commonly used silver ion migration test. A big bottleneck, which has the potential to solve the silver migration problem of chip resistors during use. Silver migration test method for silver conductor paste for chip resistors
[0007] The invention provides a method for testing the migration of silver ions in conductive pastes for chip resistors, aiming at the fact that silver conductive pastes in current electronic pastes are prone to migration of silver ions in a humid environment, and the current testing methods and means for silver ion migration are immature problem, a solid-state test method for silver ion migration is proposed, which are used for the test of high silver content conductive paste and low silver content conductive paste respectively

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for testing silver ion migration of conductor paste for chip resistor
  • Method for testing silver ion migration of conductor paste for chip resistor
  • Method for testing silver ion migration of conductor paste for chip resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 6-8

[0046] Different from Example 1, the spacing between the silver wire electrodes is different during the test, and the specific data are as shown in Table 2:

[0047] Table 2

[0048] serial number Pitch / mm Migration time / S dimensionless variance Migration form Example 6 2.0 105 0.015 tree Example 7 3.0 155 0.026 tree Example 8 4.0 220 0.025 tree

[0049] As can be seen from Table 2,

[0050] (1) The voltage is the same, the smaller the electrode spacing, the greater the electric field strength between the electrodes, so that the anode ions migrate faster, and the migration time of the test is shorter;

[0051] (2) The voltage is the same, the smaller the electrode spacing, the smaller the resistance to ion migration, and the higher the electrochemical migration rate of silver, the shorter the silver migration time;

[0052] (3) The test results are stable and there is no large deviation.

Embodiment 9-16

[0054] Different from Example 1, the voltage between the silver wire electrodes is different during the test, and the specific data are as shown in Table 3:

[0055] table 3

[0056] serial number Voltage / V Migration time / S dimensionless variance Migration form Example 9 20 55 0.016 tree Example 10 30 50 0.036 tree Example 11 40 52 0.015 tree Example 12 50 40 0.027 tree Example 13 60 35 0.017 tree Example 14 70 25 0.040 tree Example 15 80 15 0.022 tree Example 16 90 5 0.025 tree

[0057] It can be seen from Table 3 that if the electrode spacing is the same, the greater the voltage, the shorter the growth time of the migration "bridge" required for the short circuit between electrodes, that is, the shorter the migration time, the test results are stable and there is no large deviation.

Embodiment 17-19

[0059] Different from Example 1, the ambient temperature is different during the test, and the specific data are as shown in Table 4:

[0060] Table 4

[0061] serial number temperature / ℃ Migration time / S dimensionless variance Migration form Example 17 10 100 0.033 tree Example 18 15 90 0.037 tree Example 19 20 81 0.024 tree

[0062] It can be seen from Table 4 that: under the same voltage and the same spacing, the electrodes are placed at different temperatures, and the migration time of silver gradually shortens as the temperature increases, and the test results are stable without large deviations.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for testing silver ion migration of conductor paste for a chip resistor. Aiming at the problems that silver ion migration is easily generated in a wet environment bysilver conductor paste in the existing electronic paste and the existing silver ion migration testing method and means are immature, the invention provides a testing method for testing silver ion migration in a solid state, which is respectively used for testing high-silver-content conductor paste and low-silver-content conductor paste. Different forms of silver ion migration under different conditions are discussed. And the silver ion migration mechanism is analyzed. Influences of electric fields, temperature, humidity, substrates and impurities on silver migration modes are discussed. Therefore, the bottleneck that the common silver ion migration test is influenced by the environment and the migration time fluctuates greatly is broken through, and the silver migration problem of the chipresistor in the use process is effectively solved.

Description

technical field [0001] The invention relates to the technical field of electrochemistry, in particular to a method for testing silver migration of silver conductor paste for chip resistors. Background technique [0002] With the multi-functionalization and miniaturization of civilian electronic products, and the increase in the number of laminated circuit boards, chip resistors show a trend of miniaturization, and the size of chip resistors is getting smaller and smaller. It is becoming more and more refined, and due to the advancement of surface assembly and metallized through-hole technology, the substrate has changed from a single-sided board to a multi-layer wiring board. The number of through holes and vias on the substrate has increased, and the hole spacing has gradually decreased. At the same time, after long-term use of electronic components, poor insulation will occur. The reason is that silver plating, silver solder, and metal silver used as electrodes will migra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N13/00G01N27/26
CPCG01N13/00G01N27/26
Inventor 徐小艳梅元陆冬梅肖雄王大林曾艳艳鹿宁周宝荣孙社稷
Owner 西安宏星电子浆料科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com