Resistive random access memory and preparation method

A technology of resistive variable memory and resistive layer, applied in the field of memory, can solve the problems of poor stability of resistive variable memory, achieve the effects of reducing energy, improving uniformity and stability, and reducing operating voltage and power consumption

Pending Publication Date: 2021-10-26
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the object of the present invention is to provide a resist

Method used

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  • Resistive random access memory and preparation method
  • Resistive random access memory and preparation method
  • Resistive random access memory and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0072] Silver imidazole complex Ag(C 3 h 4 N 2 ) 2 NO 3 Preparation of the suspension:

[0073] 0.005mol silver nitrate (AgNO 3 ) and 0.5 mol of imidazole were added to 100 mL of deionized water, stirred magnetically for 30 min, and then moved into a reaction kettle with a stainless steel outer shell and a tetrafluoroethylene lining, heated at 150 °C for 6 h at normal pressure, cooled to room temperature, and put the The solution is centrifugally washed with deionized water, and the deionized water of the last wash is retained to obtain 0.05mol / L silver imidazole complex Ag(C 3 h 4 N 2 ) 2 NO 3 Suspension. The prepared silver imidazole complex Ag(C 3 h 4 N 2 ) 2 NO 3 Orthorhombic crystal system, space group P2 1 2 1 2 1 , and its X-ray diffraction pattern is shown in figure 2 As shown, the transmission electron microscope image and its corresponding element Mapping image are as follows image 3 As shown, where (a) is a transmission electron microscope imag...

Embodiment 2

[0080] Silver imidazole complex Ag(C 4 h 6 N 2 ) 2 NO 3 Preparation of the suspension:

[0081] 0.001mol silver nitrate (AgNO 3 ) and 0.1mol 2-methylimidazole were added to 100mL deionized water, stirred by magnetic force for 30min, then moved into a reaction kettle with stainless steel shell and tetrafluoroethylene lining, heated at 100°C under normal pressure for 3h, and cooled to room temperature; The solution in the reactor is centrifugally washed with deionized water, and the deionized water is retained after the last washing to obtain 0.02mol / L silver imidazole complex Ag(C 4 h 6 N 2 ) 2 NO 3 Suspension.

[0082] Preparation of resistive memory:

[0083] The above-mentioned silver imidazole complex Ag(C 4 h 6 N 2 ) 2 NO 3 The suspension was added dropwise onto the ITO bottom electrode (the bottom of the ITO bottom electrode is provided with a glass substrate, wherein the thickness of the glass substrate is 0.5cm, and the thickness of the ITO bottom electr...

Embodiment 3

[0085] Silver imidazole complex Ag(C 5 h 6 N 2 ) 4 NO 3 Preparation of the suspension:

[0086] 0.05mol silver nitrate (AgNO 3 ) and 2.5mol 2-ethylimidazole were added to 100mL deionized water, stirred by magnetic force for 30min, then moved into a reaction kettle with stainless steel shell and tetrafluoroethylene lining, heated at 120°C under normal pressure for 6h, and cooled to room temperature; The solution in the reactor is centrifugally washed with deionized water, and the deionized water is retained after the last washing to obtain 0.05mol / L silver imidazole complex Ag(C 5 h 6 N 2 ) 4 NO 3 Suspension.

[0087] Preparation of resistive memory:

[0088] The above-mentioned silver imidazole complex Ag(C 5 h 6 N 2 ) 4 NO 3 The suspension was added dropwise onto the ITO bottom electrode (the bottom of the ITO bottom electrode is provided with a glass substrate, wherein the thickness of the glass substrate is 0.5cm, and the thickness of the ITO bottom electrod...

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Abstract

The invention discloses a resistive random access memory and a preparation method, the resistive random access memory comprises a top electrode, a bottom electrode and a resistive random layer arranged between the top electrode and the bottom electrode, the resistive random layer is made of a silver imidazole complex, the chemical formula of the silver imidazole complex is Agx (MI) yZx, 1 < = x < = 2, 2 < = y < = 4, x and y are both positive integers, MI is an imidazolyl ligand, and Z is an anion capable of forming soluble salt with silver ions. According to the invention, the silver imidazole complex is used as a material for preparing the resistive layer of the resistive random access memory, and the migration range of silver ions is limited in the crystal grains of the silver imidazole complex, so that the migration distance of the silver ions is shortened, the energy consumed by the migration of the silver ions is reduced, and the operation voltage and power consumption of the resistive random access memory are reduced. Meanwhile, the migration range of the silver ions is limited by the silver imidazole complex crystal grains, so that the migration randomness of the silver ions can be effectively reduced, and the uniformity and the stability of the resistive random access memory are improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a resistive variable memory and a preparation method. Background technique [0002] With the development of information technology, users have higher and higher requirements on the performance of storage devices, and the preparation of high-performance storage devices has always been the direction pursued by the semiconductor field. [0003] Due to the advantages of simple structure and long data retention time, the resistive memory is considered by the industry to be the most powerful candidate for the next generation of non-volatile memory. However, resistive memory still needs to overcome many difficulties before it can be applied on a large scale. Among them, the most critical difficulties lie in reducing device power consumption and improving electrical properties such as device uniformity and stability. [0004] The structure of the resistive variable memory is sequentially...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/245H10N70/881H10N70/011
Inventor 韩素婷杜春雨周晔屈之洋
Owner SHENZHEN UNIV
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