808nm large-power quantum well laser in non-aluminum active region of asymmetric structure

An active region and quantum well technology, which is applied in the field of 808nm quantum well lasers, can solve the problems of weak lateral mode confinement and unstable output mode, and achieve the effects of improving confinement, increasing optical confinement factor, and reducing optical absorption loss

Active Publication Date: 2009-12-23
Shandong Huaguang Optoelectronics Co. Ltd.
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Problems solved by technology

At the same time, the lateral mode confinement in the symmetrical structure of the large optical cavity is also very weak, and the refractive index change caused by the temperature gradient in the lateral direction makes the output mode unstable.

Method used

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  • 808nm large-power quantum well laser in non-aluminum active region of asymmetric structure

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Embodiment Construction

[0012] As shown in the accompanying drawings, the structure of the asymmetric aluminum-free active region 808nm high-power quantum well laser of the present invention is, from bottom to top, substrate 1, buffer layer 2, lower confinement layer 3, lower waveguide layer 4, and quantum well layer. 5. Upper waveguide layer 6 , barrier confinement layer 7 , upper confinement layer 8 , transition layer 9 and ohmic contact layer 10 . The substrate 1 is used for epitaxial growth of materials of various layers of the laser thereon, and the substrate is an N-type highly doped gallium arsenic material of the (100) plane. The buffer layer 2 is grown on the substrate 1 and is an N-type highly doped GaAs material. The lower confinement layer 3 is grown on the buffer layer 2 and is an N-type AlGaInP material. The lower waveguide layer 4 is grown on the lower confinement layer 3 and is made of gallium indium phosphide material. The quantum well layer 5 is grown on the lower waveguide layer ...

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Abstract

The invention provides an aluminum-free active region 808nm high-power quantum-well laser with asymmetric structure. From the bottom to the top, the structure of the laser sequentially comprises a substrate, a buffer layer, an N-typed lower limiting layer, a lower waveguide layer, a quantum-well layer, an upper waveguide layer, a potential barrier limiting layer, a P-typed upper limiting layer, a transition layer and an ohmic contact layer, wherein, the upper waveguide layer and the lower waveguide layer are made of aluminum-free material Indium gallium phosphide, the quantum-well layer is made of gallium indium arsenide phosphide material, the waveguide layer and the quantum-well layer form the aluminum-free active region together, and one potential barrier limiting layer which is made of P-typed aluminum gallium indium phosphide material and 50nm-150nm thick and has a band gap wider than that of the upper limiting layer is arranged between the upper limiting layer and the upper waveguide layer. The laser of the invention can increase the optical limiting factor of the P-typed material region, reduce the optical leakage towards the P-typed material region, reduce optical absorption loss of a current carrier at the highly doped area, and improve the work efficiency of the laser; the structure of the invention also improves the limiting effect of the active region on the current carrier, reduces the leakage of the carrier and is favorable to the decrease of the threshold current.

Description

technical field [0001] The invention relates to a high-power and high-efficiency 808nm quantum well laser, belonging to the technical field of semiconductor lasers. Background technique [0002] 808nm high-power quantum well lasers are widely used in the fields of pumping Nd:YAG solid-state lasers, industrial processing and laser medical treatment, and have very broad application prospects and market value. With the development of the application, the output power of the laser is required to be higher and higher. [0003] In order to obtain stable high-power output, 808nm high-power quantum well lasers generally adopt symmetrical large optical cavity or even ultra-large optical cavity structures with low optical confinement factors. Among these existing symmetrical structures, aluminum gallium with a thickness of more than 1um is generally used. Arsenic is used as a confinement layer, and gallium indium phosphide above 0.6um or even above 1um is used as a wide waveguide lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343H01S5/20
Inventor 李沛旭李树强夏伟张新汤庆敏任忠祥徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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