InGaN/GaN quantum well laser and manufacturing method thereof

Abstract

The invention discloses an InGaN / GaN quantum well laser, comprising a substrate and the following components sequentially arranged on the substrate: a low temperature GaN buffer layer, a high temperature n-type GaN layer and an n-type AlGaN light confinement layer; an n-type InGaN lower waveguide layer on the n-type AlGaN light confinement layer; an InGaN / GaN quantum well active region on the n-type InGaN lower waveguide layer; a u-type InGaN upper waveguide layer on the InGaN / GaN quantum well active region; a p-type AlGaN electron barrier layer on the u-type InGaN upper waveguide layer; a p-type AlGaN / GaN light confinement layer on the p-type AlGaN electron barrier layer; and a p-type GaN ohmic contact layer on the p-type AlGaN / GaN light confinement layer. The invention also discloses a manufacturing method for the InGaN / GaN quantum well laser. The invention adopts the InxGa1-XN of 1 to 2 single-atom layer thickness to be inserted into the cap layer so that the two-dimensional island-like surface of the InGaN quantum well surface becomes smooth, that the distribution of the In group becomes more uniform and that the subsequently formed GaN cap layer has a better quality in which the InGaN quantum well is not decomposed during the temperature rise and does not undergo thermal degradation during the subsequent high temperature growth of the p-type AlGaN / GaN light confinement layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an InGaN / GaN quantum well laser and a manufacturing method thereof. Background technique [0002] GaN-based semiconductor lasers usually use InGaN / GaN quantum wells as the active region. Since the In-N bond energy is weak and the decomposition temperature is low, but the Ga-N bond energy is strong and the decomposition temperature is high, resulting in a large difference between the growth temperature of the optimal InGaN quantum well and the growth temperature of the optimal GaN quantum barrier. Therefore, we usually use the double temperature growth method to grow the InGaN / GaN quantum well active region, that is, the InGaN quantum well layer is grown at a lower temperature (generally lower than 750°C), and the GaN barrier layer is grown at a higher temperature (generally higher than 900°C). ℃). However, the InGaN quantum well layer often decomposes during ...

AI Technical Summary

Problems solved by technology

Regrown GaN cap layer on top of this 2D island topography, resulting in poor quality GaN cap layer

In addition, the InGaN quantum well active region with a high In composition has serious InGaN phase separation. After growing a low-temperature GaN cap layer with poor quality, the temperature rises to the barrier temperature and the high-temperature barrier growth process will lead to the decomposition of the InGaN quantum well layer.

When the high-temperature p-type AlGaN confinement layer of the laser structure is grown later, it will also cause thermal degradation in the active area of ​​the InGaN / GaN quantum well, and there are many dark spots in the fluorescence microscope photo

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