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Optimization method of response ratio of one-dimensional T-Hz quantum well photoelectric detector

A technology of photodetectors and optimization methods, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effect of improving work performance and optimizing response rate

Inactive Publication Date: 2010-09-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

However, according to quantum mechanics, the selection rule of ISBT determines that this type of detector can only detect the polarization component parallel to the growth direction (z direction) of the quantum well in the light field.

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  • Optimization method of response ratio of one-dimensional T-Hz quantum well photoelectric detector
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  • Optimization method of response ratio of one-dimensional T-Hz quantum well photoelectric detector

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Embodiment Construction

[0026] The specific implementation manner of the present invention will be further described below by taking an actual grating THzQWP device as an example in conjunction with the accompanying drawings.

[0027] Grating THzQWP part number: Grt-V266-17.

[0028] Detection frequency of Grt-V266-17: ~5.315THz.

[0029] The grating THzQWP device as figure 1 As shown, it consists of a THzQWP device and a metal one-dimensional grating on the surface of the device, wherein the THzQWP device consists of a substrate and a multiple quantum well structure on it. The material system of this THzQWP device is GaAs. The multi-quantum well structure includes an upper electrode layer and a lower electrode layer. There are dozens to dozens of GaAs / (Al, Ga)As multi-quantum well layers between the upper and lower electrode layers. Miscellaneous electrons are bound in quantum wells, and the substrate is semi-insulating GaAs. Its specific structural parameters are as follows: grating period d=20 ...

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Abstract

The invention relates to an optimization method of response ratio of a one-dimensional T-Hz quantum well photoelectric detector, which comprises the following steps of: 1, simulating light field distribution of having the diffraction by T-Hz light normally entering the surface of an element when entering the element after passing through an optical grating, and computing a wavelength Lambda of a primary diffraction die vertical to the surface direction of the element; and 2, thinning a substrate of the element within a range allowed by mechanical properties of the element to ensure that the total thickness of the element is integer multiples of the wavelength Lambda. The method realizes the optimal distribution of a light field in the element by grinding, polishing and corroding the substrate of the element, and can ensure a plurality of quantum wells are in a region with stronger light field by reasonably designing the thickness of an upper electrode layer and properly adding the layer number of the quantum wells, thereby improving the performance of the element, optimizing the response rate, and having important meaning on the research and the implementation of THz real-time imaging.

Description

technical field [0001] The invention relates to a method for improving the working performance of a terahertz quantum well photodetector, especially a method for optimizing the responsivity of a one-dimensional grating terahertz quantum well photodetector. The invention belongs to the technical field of semiconductor optoelectronic devices. Background technique [0002] Terahertz (THz) wave refers to the frequency in the electromagnetic spectrum from 100GHz to 30THz (1THz=10 12 Hz), the corresponding wavelength is from 3 millimeters to 10 micrometers, which is the region of the electromagnetic spectrum between millimeter waves and infrared light. For a long time, due to the lack of efficient THz sources and high-sensitivity detection methods, this spectral region has become the only underdeveloped region in the entire electromagnetic spectrum. [0003] One of the core components of the application of THz technology is the THz detector. At present, the relatively mature TH...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张戎郭旭光曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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