Method for epitaxial growth of ultraviolet LED with high luminous efficacy

A technology of epitaxial growth and high light efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high preparation cost, difficulty and low yield, and achieve the effect of increasing radiation power and reducing the difficulty of growth.

Inactive Publication Date: 2014-06-25
西安利科光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the epitaxial growth technology of ultraviolet LED is not mature enough, and the material preparation for growing high-performance ultraviolet LED is difficult, and p-layer doping is difficult, and the luminous efficiency of the light-emitting area is low, which leads to the low luminous efficiency of the ultraviolet LED chip and high preparation cost. Difficulty, low yield

Method used

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  • Method for epitaxial growth of ultraviolet LED with high luminous efficacy
  • Method for epitaxial growth of ultraviolet LED with high luminous efficacy
  • Method for epitaxial growth of ultraviolet LED with high luminous efficacy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] 1. After cleaning the sapphire substrate, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0053] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 200 torr.

[0054] 3. Raise the temperature to 1070°C to grow an intrinsic AlN layer with a thickness of 300nm, and the growth pressure is 200torr.

[0055] 4. A layer of 10-period AlN / AlGaN superlattice is grown at a temperature of 1050° C. and 200 torr, with a total thickness of 70 nm.

[0056] 5. Grow a silane-doped n-type AlGaN layer at a temperature of 1050°C with a thickness of 500nm and a pressure of 200torr.

[0057] 6. Grow a 3nm AlxInyGa1-x-yN layer at 850°C in a nitrogen atmosphere of 50torr; then raise the temperature to 950°C and 200torr to grow a 12nm AlGaN layer, doping a small amount of silane during the growth process; then repeat the growth of 3 cycle.

[0058] 7. Then grow a layer of about 3nm Al in nitrogen a...

Embodiment 2

[0067] 1. After cleaning the sapphire substrate, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0068] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 200 torr.

[0069] 3. Raise the temperature to 1070°C to grow an intrinsic AlN layer with a thickness of 300nm, and the growth pressure is 200torr.

[0070] 4. Grow a silane-doped n-type AlGaN layer with a thickness of 500nm at a temperature of 1050°C and a pressure of 200torr.

[0071] 5. Grow a layer of about 3nm Al in nitrogen atmosphere 50torr, 850℃ x In y Ga 1-x-y N layer; then raise the temperature to 950°C and 200torr, and then grow a 12nm AlGaN layer, doped with a small amount of silane during the growth process; then repeat the growth for 3 cycles.

[0072] 6. Then grow a layer of about 3nm Al in nitrogen atmosphere 50torr, 850℃ x In y Ga 1-x-y N layer, followed by a layer of Al z In w Ga 1-z-w N(x

Embodiment 3

[0081] 1. After cleaning the sapphire substrate, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0082] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 200 torr.

[0083] 3. Raise the temperature to 1070°C to grow an intrinsic AlN layer with a thickness of 300nm, and the growth pressure is 200torr.

[0084] 4. A layer of 10-period AlN / AlGaN superlattice is grown at a temperature of 1050° C. and 200 torr, with a total thickness of 70 nm.

[0085] 5. Grow a silane-doped n-type AlGaN layer with a thickness of 500nm at a temperature of 1050°C and a pressure of 200torr.

[0086] 6. Grow a layer of about 3nm Al in a nitrogen atmosphere of 50torr and 850℃ x In y Ga 1-x-y N layer; then raise the temperature to 950°C and 200torr, and then grow a 12nm AlGaN layer, doped with a small amount of silane during the growth process; then repeat the growth for 3 cycles.

[0087] 7. Then grow a...

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PUM

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Abstract

The invention provides a new method for epitaxial growth of an ultraviolet LED. By the adoption of the method for epitaxial growth of the ultraviolet LED, the growth difficulty can be greatly lowered, and the radiant power of the ultraviolet LED is greatly increased. An AlGaN / AlxInyGa1-x-y layer is grown for a plurality of periods, wherein x, y, z and w meet the following requirements for x

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronics, in particular to a violet LED epitaxy method. Background technique: [0002] With the development of LED applications, the market demand for ultraviolet LEDs is increasing. Ultraviolet LEDs with emission wavelengths covering 210-400nm have advantages that traditional ultraviolet light sources cannot match. Ultraviolet LEDs can not only be used in the field of lighting, but also can replace traditional ultraviolet mercury lamps containing toxic and harmful substances in biomedicine, anti-counterfeiting identification, air and water purification, biochemical detection, and high-density information storage. Under the current LED background , the Ziguang market prospect is very broad. [0003] At present, the epitaxial growth technology of ultraviolet LED is not mature enough, and the material preparation for growing high-performance ultraviolet LED is difficult, and p-layer doping is di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/32
CPCH01L33/0066H01L33/0075H01L33/06H01L33/32
Inventor 王晓波
Owner 西安利科光电科技有限公司
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