Process for growing P-type ZnO crystal film by real-time doping nitrogen

Abstract

The method for real-time nitrogen-doped growth of p-type ZnO crystal thin film of the present invention adopts magnetron sputtering method, puts into the reaction chamber of DC reactive magnetron sputtering device after the substrate surface is cleaned first, and the vacuum degree of reaction chamber is pumped to at least 10 -3 Pa, then heat the substrate so that the substrate temperature is 200-600°C, and use high-purity ammonia gas NH 3 and high-purity oxygen O 2 It is sputtering gas, the two kinds of gases are respectively controlled by the flowmeter and input into the buffer chamber of the device, and then introduced into the vacuum reaction chamber after being fully mixed in the buffer chamber, and under the pressure of 1-10Pa, high-purity Zn is used as the target material for sputtering growth , where the partial pressure ratio of ammonia to oxygen is adjusted according to the doping concentration. According to NH 3 with O 2 P-type ZnO crystal films with different doping concentrations can be prepared with different partial pressure ratios, and the growth time is determined by the required thickness.

Description

Technical field [0001] The invention relates to a doping method of p-type ZnO. Specifically, it is about the method of real-time nitrogen-doped growth of p-type ZnO crystal film. Background technique [0002] To realize the application of ZnO-based devices, it is necessary to prepare controllable n- and p-type ZnO crystal films. At present, the research on n-type ZnO crystal film has been relatively sufficient. By doping with III-valent elements, it has been possible to realize the growth of real-time and controllable concentration of n-type ZnO crystal film. However, in order to fabricate optoelectronic devices from ZnO crystal films, ZnO pn junctions must be fabricated. Because ZnO has many intrinsic donor defects, such as interstitial zinc Zn i And vacant oxygen V o , Its energy levels are located at the bottom of the conduction band at 0.05eV and 0.3eV, which have a high degree of self-compensation for the acceptor. Moreover, the acceptor energy lev...

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Problems solved by technology

The latter two doping effects are not ideal due to the deep acceptor energy level and low solid solubility, and both arsenic and phosphorus are toxic

The first two use highly active nitrogen doping and co-doping of gallium and nitrogen. Since the activity of nitrogen is very low and the atomic radius is larger than that of oxygen atoms, chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) are used to grow technology, it is difficult to replace the position of oxygen atoms, and it is impossible to achieve real-time controllable nitrogen doping

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