High-mobility high-hole concentration P-type AlGaN material and growth method thereof

A technology with high hole concentration and high mobility, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low mobility and low hole concentration of P-type AlGaN, and achieve remarkable effects, simple process and broad application prospects. Effect

Active Publication Date: 2019-02-01
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems of low mobility and low hole concentration of P-type AlGaN in the prior art, the present invention provides a P-type AlGaN material with high mobility and high hole concentration and a growth method thereof

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  • High-mobility high-hole concentration P-type AlGaN material and growth method thereof
  • High-mobility high-hole concentration P-type AlGaN material and growth method thereof

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Embodiment Construction

[0032] Further illustrate the present invention below in conjunction with accompanying drawing.

[0033] Such as figure 1 As shown, the high mobility and high hole concentration P-type AlGaN material of the present invention includes an aluminum nitride layer 2, a doped epitaxial layer 3 and a graded epitaxial layer 4 arranged in sequence from bottom to top, and may also include an aluminum nitride layer 2 Substrate layer 1 on the lower surface.

[0034] Wherein, the material of the substrate layer 1 is commonly used substrate materials such as sapphire, silicon carbide, and silicon.

[0035] The aluminum nitride layer 2 is an Al polar surface, and its thickness is preferably 1-5 μm.

[0036] The material of the doped epitaxial layer 3 is Mg-doped AlGaN, and the doping concentration is not particularly limited, and can be selected according to actual needs; the doped epitaxial layer 3 is metal surface polarity; the thickness is preferably greater than 0 and less than 1.5 μm....

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Abstract

The invention relates to a high-mobility high-hole concentration P-type AlGaN material and a growth method thereof and belongs to the technical field of semiconductors. With the high-mobility high-hole concentration P-type AlGaN material and the growth method thereof of the invention adopted, the problems of low mobility and low hole concentration of P-type AlGaN in the prior art can be solved. The P-type AlGaN material of the present invention comprises an aluminum nitride layer, a doped epitaxial layer and a graded epitaxial layer which are arranged sequentially from bottom to top; the aluminum nitride layer is an Al polarity surface; the doped epitaxial layer is made of a Mg doped P-type AlGaN material; the doped epitaxial layer is a metal polarity surface; the graded epitaxial layer isof a multilayer structure from bottom to top; each layer of the multilayer structure of the graded epitaxial layer is made of an unintentionally doped AlxGa1-xN material; and the Al components of theunintentionally doped AlxGa1-xN materials of the multilayer structure gradually decrease from bottom to top. According to the P-type AlGaN material of the invention, on the basis of polarization-induced charges and the separation of a carrier transport region from an impurity ionization region, high mobility and high hole concentration can be realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a P-type AlGaN material with high mobility and high hole concentration and a growth method thereof. Background technique [0002] As a III-V ternary alloy material, AlGaN's forbidden band width is continuously adjustable between 3.4-6.2eV with the change of Al composition from low to high, corresponding to the deep ultraviolet range from 365nm to 200nm. AlGaN materials have unique advantages such as radiation resistance and easy wavelength adjustment. It is an ideal material for preparing ultraviolet and deep ultraviolet optoelectronic devices. [0003] The application basis of semiconductor devices is the PN junction, and the realization of high-conductivity P-type and N-type is the prerequisite for AlGaN materials to achieve specific functions and be applied to practical devices. For AlGaN materials, due to the existence of intrinsic defects and donor impur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/20H01L21/02
CPCH01L21/0242H01L21/0254H01L21/02579H01L21/0262H01L29/2003
Inventor 黎大兵蒋科孙晓娟贾玉萍石芝铭刘贺男
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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