Nitrogen-doped p-type transparent conductive BeZnOS film as well as preparation method and application thereof

Abstract

The invention provides a nitrogen-doped p-type transparent conductive BeZnOS film as well as a preparation method and application thereof. The preparation method comprises the following steps of preparing a BeZnOS ceramic target material; providing a substrate, placing the substrate in a vacuum cavity of a pulse laser deposition system, introducing nitric oxide gas into the vacuum cavity, and growing a nitrogen-doped BeZnOS film on the substrate by using a BeZnOS ceramic target material and adopting a pulse laser ablation deposition method; and annealing the obtained nitrogen-doped BeZnOS filmat the temperature of 400-750 DEG C to obtain the nitrogen-doped p-type transparent conductive BeZnOS film. According to the preparation method, Be and S are doped into ZnO to form BeZnOS alloy, an energy band structure and an electronic structure of the BeZnOS alloy can be continuously adjusted, meanwhile, a hexagonal structure of ZnO can be kept, the more stable Be-N bond and the higher valenceband top can reduce the energy level of No, and the stability of No is improved.

Description

technical field [0001] The invention relates to the technical field of p-type transparent conductive thin films, in particular to a nitrogen-doped p-type transparent conductive BeZnOS thin film and its preparation method and application. Background technique [0002] At present, the international reports that can be used as p-type ZnO doping elements include group V elements N, P, As, etc., and group I elements Li, Na, etc., among which Li ions have a small radius and are easy to occupy the lattice gap to form donor impurities. It is conducive to the realization of p-type conductivity. Among the group V elements, the size of N atoms is similar to that of O atoms, and the N acceptor energy level in ZnO is relatively shallow. It has always been considered as the most promising p-type dopant. However, due to the low solubility of N in ZnO and the o unstable, it is difficult to achieve stable p-type conduction. [0003] For the current N-doped ZnO N o It is necessary to impro...

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Problems solved by technology

[0002] At present, the international reports that can be used as p-type ZnO doping elements include group V elements N, P, As, etc., and group I elements Li, Na, etc., among which Li ions have a small radius and are easy to occupy the lattice gap to form donor impurities. It is conducive to the realization of p-type conductivity. Among the group V elements, the size of N atoms is similar to that of O atoms, and the energy level of N acceptors in ZnO is shallow. It has always been considered as the most promising p-type dopant

However, due to the low solubility of N in ZnO and the o unstable, it is difficult to achieve stable p-type conduction

[0003] For the current N-doped ZnO N o It is necessary to improve the problem of unstable acceptor and low solubility of N

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