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Preparation method of high-luminance V-shaped polarized doped deep ultraviolet LED

A polarized doping and high-brightness technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced light extraction efficiency of LED devices

Active Publication Date: 2018-08-03
迪优未来科技(清远)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Although the above studies have improved the luminous power and efficiency of LEDs to a certain extent, there are still electron blocking layers or P-GaN contact layers in the structural layer, which strongly absorb the deep ultraviolet light emitted from the light-emitting area, reducing the light extraction efficiency of LED devices

Method used

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  • Preparation method of high-luminance V-shaped polarized doped deep ultraviolet LED
  • Preparation method of high-luminance V-shaped polarized doped deep ultraviolet LED
  • Preparation method of high-luminance V-shaped polarized doped deep ultraviolet LED

Examples

Experimental program
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Embodiment 1

[0034] S1. On the sapphire substrate, first grow an aluminum nitride (AlN) buffer layer with a thickness of 25nm at low temperature. The / III molar ratio is 5000-5500, and the growth thickness is 25 nanometers.

[0035] S2. Growing a high-temperature aluminum nitride (AlN) buffer layer with a thickness of 500 nm on the low-temperature aluminum nitride (AlN) buffer layer. Growth conditions: the growth temperature is 1050°C, the reaction chamber pressure is 40torr, the ammonia gas flow rate is 8000μmol / min, and the V / III molar ratio is 5000.

[0036] S3. Growing a 1.5-micron-thick N-type AlGaN stress release layer with a composition gradient on the high-temperature aluminum nitride (AlN) buffer layer. Growth conditions: growth temperature is 1050°C, reaction chamber pressure is 40torr, TMGa flow rate is 17μmol / min, TMAl flow rate is 2-5.5μmol / min, SiH 4 The flow rate is 7-9 nmol / min, the flow rate of ammonia gas is 10000 μmol / min, and the growth thickness is 1.5 μm.

[0037] ...

Embodiment 2

[0042] S1. On the composite substrate of sapphire and aluminum nitride (Al 2 o 3 / AlN), first grow an aluminum nitride (AlN) buffer layer with a thickness of 15nm at low temperature, the growth conditions: the growth temperature is 650°C, the reaction chamber pressure is 50torr, the ammonia flow rate is 9000μmol / min, and the V / III molar ratio is 5000~5500.

[0043] S2. Growing a high-temperature aluminum nitride (AlN) buffer layer with a thickness of 300 nm on the low-temperature aluminum nitride (AlN) buffer layer. Growth conditions: the growth temperature is 1080°C, the reaction chamber pressure is 50torr, the ammonia gas flow rate is 9000μmol / min, and the V / III molar ratio is 5500.

[0044] S3. Growing an N-type AlGaN stress release layer with a thickness of 1 micron on the high-temperature aluminum nitride (AlN) buffer layer. Growth conditions: growth temperature is 1080°C, reaction chamber pressure is 50torr, TMGa flow rate is 17μmol / min, TMAl flow rate is 2-5.5μmol / mi...

Embodiment 3

[0049] Steps S1 to S5 are the same as in Embodiment 1.

[0050] S6. On the deep ultraviolet light-emitting layer, grow a V-shaped P-type AlGaN layer with a total thickness of 110 nm, each V-shaped layer has a thickness of 12.22 nm, and the others are the same as in Example 1.

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Abstract

The invention provides a preparation method of a high-luminance V-shaped polarized doped deep ultraviolet LED. The prepared deep ultraviolet LED structure comprises a substrate, an AlN buffer layer, astress relief layer, an N type AlGaN layer, an AlGaN / AlGaN multi-quantum-well active region and a P type AlGaN layer with V-shaped gradually changed Al components. By virtue of the P type AlGaN layerwith the V-shaped gradually changed Al components, the light emitting efficiency is improved; meanwhile, by adopting the V-shaped gradually changed structure to replace a P type AlGaN electron barrier layer, a P type AlGaN contact layer and a P type P-GaN layer, the light extracting efficiency is improved; and by virtue of the structure, the hole concentration of the P type layer is greatly improved, light absorption of the P type contact layer is avoided fundamentally, the manufacturing process is simple, and industrial production can be realized.

Description

technical field [0001] The invention belongs to the technical field of LED preparation, and mainly relates to a method for preparing a high-brightness V-shaped polarization-doped deep-ultraviolet LED. Background technique [0002] Ultraviolet LEDs have broad application prospects in the fields of sterilization and disinfection, polymer curing, biochemical detection, non-line-of-sight communication, and special lighting. Compared with the traditional ultraviolet light source mercury lamp, ultraviolet LED has many advantages such as mercury-free environmental protection, compact and portable, low voltage, low power consumption, easy integration, and environmental friendliness. A high value-added growth point. It is estimated that its relevant market size can be as high as billions of dollars, so it has received more and more attention and attention. [0003] In the field of ultraviolet LEDs, deep ultraviolet LEDs based on AlGaN materials have been developed rapidly, but low ...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/005H01L33/145
Inventor 尹以安王山林
Owner 迪优未来科技(清远)有限公司
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