The invention discloses a semiconductor light-emitting device, which comprises a substitution substrate and a semiconductor extension laminated layer which is orderly connected with the substitution substrate through a metal layer, wherein the semiconductor extension laminated layer at least comprises a buffer layer, an N type layer, a luminous layer and a P type layer from the upper to the lower, a conductor is arranged in the N type layer, one end of the N type layer extents to expose the buffer layer, and an N type electrode is arranged, and a dielectric layer is arranged between the other end of the conductor and the metal layer. The lower end of the substitution substrate is quipped with a P type electrode, and the conductor, the P type layer and the metal layer are separated. The device of the invention sends light from the side of the N type layer, a transparency electrode does not need to use on the side of sending the light, thereby being capable of effectively improving the output power of the semiconductor device, and also being capable of reducing the thermal resistance of a light emitting diode device. Further, the invention also discloses a method for preparing a semiconductor light emitting diode.