Light-emitting diode structure

Abstract

The invention relates to structure of LED. Most of Si substrate with Miller indices as 100 is removed by using photo-resistetching. Meanwhile, part of Boron monophosphide layer near crystal lattice of Si substrate is removed by using photo-resistetching. Micro removing is carried out for LED by photo etching or a micro-lens is made at exacatin of removed structure for focusing light. A reflecting minor with multilayer films is formed above LED through procedure of coating by vaporization or epitaxy process in order to reflect emitting light. Thus, the LED with structure of backside emitting is made: preventing light absorption by Si substrate; reflecting minor with multilayer films and micro-lens reflect and focus light emitted by LED so as to raise luminous efficiency.

Description

technical field [0001] The unremoved original main structure of the present invention is a silicon substrate on the (100) plane with a crystal plane index (Millerindices) using a boron monophosphide layer as a buffer layer (buffr layer) (Si(100)substrate) epitaxial growth tetragonal lattice c-GaN devices (devices) structure, especially a kind of metalorganic vapor phase epitaxy (MOVPE) into the two-input gas BCl 3 and PH 3 As an epitaxial or doping material, a boron monophosphide layer (Boronmonophosphide layer) with an orderly crystal lattice and close to the silicon substrate is epitaxially grown on a silicon substrate with a crystal plane index (Miller indices) of (100) as The buffer layer (buffr layer) for lattice conversion, and then the boron phosphide layer (also called lattice conversion layer) is formed on the (100) silicon substrate (Si(100) substrate) by the organometallic vapor phase epitaxy To improve the light-emitting diode structure of GaN series devices (dev...

AI Technical Summary

Problems solved by technology

[0003] The generally known technical structure is (0001) plane Al in one lattice direction 2 o 3 An undoped (undoped) buffer layer (buffer layer) is epitaxially grown on the substrate, and then a device is epitaxially grown on the buffer layer, and the device is a P-type GaN layer And an N-type GaN layer covers a layer of active layer (active layer) Hexagonal lattice (Hexagonal lattices) GaN series structure components, although the above known technologies are widely used at present, they still cannot be mass-produced and the manufacturing cost The disadvantages of too high and difficult manufacturing process, what's more, because the silicon substrate (100) has a light-absorbing effect on the emitted light of the device (devices), it also has the disadvantage of causing the device's poor luminous efficiency

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