Method for cutting light emitting diode chip through deep etching

Abstract

The invention provides a method for cutting a light emitting diode chip through deep etching. The method comprises the following steps: firstly, forming a light emitting element comprising a plurality of light emitting units on the surface of a semiconductor substrate; then fabricating a protecting layer with etching windows formed at the connections between each of the light emitting units; etching from each of the etching windows to form sliver channels; next, filling each of the sliver channels with insulation material and thinning the semiconductor substrate from back until exposing the insulation material; and finally making a back coating, removing the insulation material in each of the sliver channel, and expanding the film to obtain independent light emitting units. According to the invention, by adopting the method of forming the sliver channels through deep etching, the cut grooves are deep into the sapphire substrate, thus avoiding laser cutting processing step, avoiding the problem of light absorption caused by laser ablation, and increasing light outgoing efficiency; and the deep etching depth is equivalent to the final thickness of the chip, and separated chip grains can be obtained by removing the filled SiO2, thus reducing sliver operation, avoiding broken sides and broken corners in the slivers, and increasing the yield.

Description

technical field [0001] The invention relates to a cutting method of a light emitting diode, in particular to a method for deep etching and cutting a light emitting diode chip. Background technique [0002] GaN-based light-emitting diodes (Light Emitting Diode, abbreviated as LED) have the advantages of high efficiency, energy saving, environmental protection, and long service life, and are widely used in the fields of image display, signal indication, and lighting. In recent years, driven by new technologies, GaN-based light-emitting diode-related research and manufacturing fields have developed rapidly. However, its low luminous efficiency has always restricted its application in the lighting industry and is also the main reason for its replacement of traditional lighting. bottleneck. To improve its brightness, in addition to factors in epitaxial growth, the cutting method in chip manufacturing will also have a certain impact on brightness. At present, the cutting methods...

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Problems solved by technology

However, this processing method also has disadvantages: the modified layer in the chip is relatively narrow, which invisibly increases the difficulty of the splitting process. If the laser power is increased to expand the width of the modified layer, it will inevitably affect the life of the laser and is not conducive to mass production

Two times of laser processing will also inevitably affect the efficiency

Stealth cutting equipment is expensive and costly, which is a major disadvantage of stealth cutting technology

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