The invention proposes a 
transistor outline (TO)-CAN packaged 
semiconductor laser and a fabrication method thereof. The TO-CAN packaged 
semiconductor laser comprises a TO tube base, a 
semiconductor laser chip, a backlight 
detector chip, a gold bonding wire, pins and a 
heat sink block, wherein the 
heat sink block is arranged on the upper surface of the TO tube base, the pins are fixed on the TO tube base in an insulation way, the upper end of at least one pin protrudes out of the upper surface of the TO tube base, the semiconductor laser 
chip is fixed on the surface of the 
heat sink block, the upper part of the pin protruding out of the upper surface of the TO tube base is connected with a support table, and the backlight 
detector chip is arranged on the support table and below the semiconductor laser chip. In the TO-CAN packaged semiconductor laser, the backlight 
detector chip is arranged on the support table integrated and connected with the pins, thus, an independent 
cushion block is omitted, and the material cost of the 
cushion block is saved; and moreover, the gold 
wire bonding process between the backlight detector chip and the 
cushion block in one time is omitted, the gold 
wire bonding process is simplified, the gold 
wire bonding cost is saved, and the stability of a laser product is improved.