GaN-base light-emitting diode chip growing method

Abstract

The invention discloses a GaN-base light-emitting diode chip growing method and belongs to the technical field of semiconductors. The method comprises the steps that a substrate is provided; a buffering layer, an undoped GaN layer, an n-type layer and a multiple-quantum-well layer grow on the substrate in sequence in an overlapping mode; a p-type layer and a current expanding layer grow on the multiple-quantum-well layer; the p-type layer grows on the multiple-quantum-well layer. Specifically, the GaN-base light-emitting diode chip growing method comprises the steps that a first sub-layer and a second sub-layer grow on the multiple-quantum-well layer in an alternating mode, Mg doping is carried out on the first sub-layer and the second sub-layer, the first sub-layer grows in a pure-nitrogen atmosphere, and the second sub-layer grows in a pure-hydrogen atmosphere. According to the method, the first sub-layer grows in the pure-nitrogen atmosphere, doped Mg activation can be well improved, Mg activation can improve hole concentration; the second sub-layer grows in the pure-hydrogen atmosphere, due to the strong reducing property of hydrogen, impurities in crystals can be reduced, the injection efficiency of holes is increased, and crystal quality and chip light-emitting efficiency are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a GaN-based light-emitting diode chip. Background technique [0002] Today's GaN-based light-emitting diodes have been used in various fields such as display screens, backlight sources, traffic lights, landscape lights, and lighting. GaN-based light-emitting diode chips are the core components of GaN-based light-emitting diodes. [0003] Existing GaN-based light-emitting diode chips generally adopt heterogeneous epitaxial growth methods. Due to the mismatch of lattice constants and thermal expansion coefficients between materials, a large number of dislocations and defects will be generated, and multi-quantum well layers are generally grown at relatively low temperatures. , and its lower growth temperature will also produce a large number of dislocations and defects, which will extend to the p-type layer and affect the crystal quality of the p-type la...

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Problems solved by technology

[0005] In prior art at N 2 and H 2 Growing the p-type layer in a mixed atmosphere has a limited effect on improving the quality of the p-type layer, and the hole injection efficiency of the grown light-emitting diode chip is not high, and the luminous efficiency is not high

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