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Precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and preparation method

A UV detector, homogenous structure technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as photoelectric performance limitations of UV detectors

Inactive Publication Date: 2014-06-25
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to defects in material preparation and device structure, the photoelectric performance of ultraviolet detectors is limited, and the parameters such as photoresponsivity and response time of the device still need to be further improved.

Method used

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  • Precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and preparation method
  • Precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and preparation method
  • Precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0036] [1] At room temperature, drop 8mL of acetic acid, 8mL of acetylacetone, and 8mL of deionized water in sequence into a mixture of 8mL of tetrabutyl titanate and 90mL of ethanol that is constantly stirred and mixed evenly, and continue to stir until a uniform and transparent orange-red color is obtained. sol, TiO was obtained after aging for 36 hours 2 Sol;

[0037] [2] Put the quartz substrate into acetone, ethanol and deionized water in turn, ultrasonic for 12 minutes respectively, the ultrasonic power is 90W, and then blow dry under nitrogen flow;

[0038] [3] Spin-coat 6 layers of TiO on the cleaned quartz substrate with a homogenizer 2 Sol, the rotation speed of each layer is 2500rpm, the coating time is 15s, after coating, it is baked at 120°C for 6 minutes, and cooled in the air for 3 minutes; finally, the spin-coated TiO 2 The substrate of the sol is placed in a muffle furnace and sintered at 600°C for 2 hours to form anatase TiO 2 Thin film with a thickness of...

Embodiment 2

[0041] [1] At room temperature, drop 8mL of acetic acid, 8mL of acetylacetone, and 8mL of deionized water in sequence into a mixture of 8mL of tetrabutyl titanate and 90mL of ethanol that is constantly stirred and mixed evenly, and continue to stir until a uniform and transparent orange-red color is obtained. sol, TiO was obtained after aging for 36 hours 2 Sol;

[0042] [2] Take 0.2g of chloroplatinic acid (H 2 PtCl 6 6H 2 0), it is added in the mixed solution of 5mL water and 5mL ethanol, stirs until fully dissolving, the mixed solution after dissolving is added the TiO of 10mL that takes out from step [1] 2 In the sol, heat and stir in a water bath at 80°C for 3 hours to obtain Pt / TiO 2 Sol;

[0043] [3] Put the quartz substrate into acetone, ethanol and deionized water in turn, ultrasonic for 12 minutes respectively, the ultrasonic power is 90W, and then blow dry under nitrogen flow;

[0044] [4] Spin-coat 6 layers of Pt / TiO on the cleaned quartz substrate with a coa...

Embodiment 3

[0047] [1] At room temperature, drop 8mL of acetic acid, 8mL of acetylacetone, and 8mL of deionized water in sequence into a mixture of 8mL of tetrabutyl titanate and 90mL of ethanol that is constantly stirred and mixed evenly, and continue to stir until a uniform and transparent orange-red color is obtained. sol, TiO was obtained after aging for 36 hours 2 Sol;

[0048] [2] Take 0.2g of chloroplatinic acid (H 2 PtCl 6 6H 2 0), it is added in the mixed solution of 5mL water and 5mL ethanol, stirs until fully dissolving, the mixed solution after dissolving is added the TiO of 10mL that takes out from step [1] 2 In the sol, heat and stir in a water bath at 80°C for 3 hours to obtain Pt / TiO 2 Sol;

[0049] [3] Put the quartz substrate into acetone, ethanol and deionized water in turn, ultrasonic for 12 minutes respectively, the ultrasonic power is 90W, and then blow dry under nitrogen flow;

[0050] [4] Spin-coat 5 layers of Pt / TiO on the cleaned quartz substrate with a coa...

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Abstract

The invention relates to a precious-metal doped TiO2 / TiO2 homogeneous-structure ultraviolet detector and a preparation method and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a quartz substrate, a precious-metal doped TiO2 film layer, a pure TiO2 film layer and a metal interdigital electrode. The detector is characterized by being provided with a homogeneous structure formed by the precious-metal doped TiO2 film layer and the pure TiO2 film layer. On one side, by the doping of precious metal, the substrate material has a low Fermi level, and the metal electrode and substrate material contacting barrier height is reduced; on the other side, the built-in electric field direction of the homogeneous structure formed by the precious-metal doped TiO2 film layer and the pure TiO2 film layer is opposite to the built-in electric field direction of metal-semiconductor contact of the detector, and the barrier height is also reduced. The photo-response characteristic of the ultraviolet detector is effectively improved from the material doping modification and the device structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to a TiO with noble metal doping 2 / TiO 2 A homogeneous structure ultraviolet photodetector and its preparation method. Background technique [0002] As an important branch of modern sensing technology, ultraviolet detection technology is another new detection technology with great practical and application value besides laser, infrared light and visible light detection. Engineering and future energy storage and optoelectronic integrated circuits show potential prospects and application value. [0003] With the development of ultraviolet detection technology, the development of ultraviolet detectors has become the focus of attention. Whether it is military or civilian, there is an urgent need for high-reliability and high-stability ultraviolet detectors. It is particularly important to pursue ultraviolet detectors with high comprehensive performance....

Claims

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Application Information

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IPC IPC(8): H01L31/103H01L31/0352H01L31/18
CPCH01L31/022408H01L31/0321H01L31/103H01L31/18Y02P70/50
Inventor 阮圣平刘国华高强刘彩霞周敬然温善鹏董玮郭文滨张歆东沈亮张敏
Owner JILIN UNIV
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