Fabrication method of mems infrared sensor based on thin film bulk acoustic resonator
An infrared sensor and thin-film bulk acoustic wave technology, applied in the field of microelectronics, can solve the problems of slow heating and cooling, low detection sensitivity, narrow detection band, etc., and achieve the effects of no cooling, high sensitivity, and low production cost.
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[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are only used to more clearly illustrate the technical solution of the present invention.
[0028] 1. Preparation of MEMS infrared sensor based on thin film bulk acoustic resonator
[0029] figure 1 As shown, the film bulk acoustic resonator FBAR used for infrared detection in the present invention includes a metal block 101 , a piezoelectric oscillator stack 108 and an acoustic reflection layer 109 thereunder. Wherein, the piezoelectric oscillator stack 108 includes a bottom electrode 104 , a piezoelectric layer 103 , and an upper electrode 102 ; the acoustic wave reflection layer 109 includes a substrate 107 , a support layer 105 , and an air cavity 106 .
[0030] The FBAR vibration mode can be a shear wave mode, a shear wave mode, or a mixed mode of the two. Different vibration modes correspond to the electrode distri...
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