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Fabrication method of mems infrared sensor based on thin film bulk acoustic resonator

An infrared sensor and thin-film bulk acoustic wave technology, applied in the field of microelectronics, can solve the problems of slow heating and cooling, low detection sensitivity, narrow detection band, etc., and achieve the effects of no cooling, high sensitivity, and low production cost.

Active Publication Date: 2016-01-13
HAINING BERNSTEIN BIOTECH CO LTD
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Problems solved by technology

[0006] Infrared detectors are divided into photon detectors and thermal detectors. Photon detectors generally need to work at low temperatures and have a narrow detection band, while thermal detectors are slow in response to the heating and cooling of macroscopic samples. Long time, low detection sensitivity

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  • Fabrication method of mems infrared sensor based on thin film bulk acoustic resonator
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  • Fabrication method of mems infrared sensor based on thin film bulk acoustic resonator

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Embodiment Construction

[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are only used to more clearly illustrate the technical solution of the present invention.

[0028] 1. Preparation of MEMS infrared sensor based on thin film bulk acoustic resonator

[0029] figure 1 As shown, the film bulk acoustic resonator FBAR used for infrared detection in the present invention includes a metal block 101 , a piezoelectric oscillator stack 108 and an acoustic reflection layer 109 thereunder. Wherein, the piezoelectric oscillator stack 108 includes a bottom electrode 104 , a piezoelectric layer 103 , and an upper electrode 102 ; the acoustic wave reflection layer 109 includes a substrate 107 , a support layer 105 , and an air cavity 106 .

[0030] The FBAR vibration mode can be a shear wave mode, a shear wave mode, or a mixed mode of the two. Different vibration modes correspond to the electrode distri...

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Abstract

The invention discloses an MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and a preparation method of the MEMS infrared sensor. The MEMS infrared sensor sequentially comprises a metal block, a piezoelectric oscillation pile and an acoustic wave reflection layer, wherein the piezoelectric oscillation pile and the metal block are sequentially deposited on the acoustic wave reflection layer; the piezoelectric oscillation pile comprises a bottom electrode, a piezoelectric layer and an upper electrode which are sequentially deposited on the acoustic wave reflection layer; the upper electrode is arranged on the surface of the infrared sensor and called as an infrared window film; the material of the infrared window film is a conductive film with infrared transmittance rate, so that infrared light irradiates the piezoelectric layer by transmitting the upper electrode; the acoustic wave reflection layer comprises a substrate, a support layer and an air cavity; the support layer is deposited on the substrate; the air cavity is formed between the substrate and the support layer; the piezoelectric oscillation pile is deposited on the support layer. The MEMS infrared sensor is small in size, low in production cost and simple in preparation process; the MEMS infrared sensor can be repeatedly used and is capable being produced in batches and integrating arrays, low in production cost, easily compatible with external circuits, free of refrigeration and sensitive to the overall infrared wave band.

Description

technical field [0001] The invention relates to a MEMS infrared sensor based on a thin-film bulk acoustic wave resonator, belonging to the technical field of microelectronics. Background technique [0002] Infrared radiation technology has developed into a new technological science in the last 40 years. It plays an extremely important role in a wide range of application fields, especially in scientific research, military engineering and medicine. For example, in infrared guided rockets, infrared imaging, infrared remote sensing, etc. The important tool of infrared radiation technology is the infrared sensor, which has played a huge role in modern production practice. Especially in the realization of long-distance temperature detection and control. With its excellent performance, the infrared temperature sensor meets the needs of many aspects, so the development prospect of the infrared sensor is immeasurable in the place where the product sensor shows its talents. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00G01J1/42
Inventor 胡娜娜董树荣骆季奎郭维卞晓磊
Owner HAINING BERNSTEIN BIOTECH CO LTD
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