48results about How to "Increase parallel resistance" patented technology

The invention provides a lead-free silver conductive paste used for positive electrode of solar battery and a preparation technique thereof. The paste comprises the following materials by weight percentage: 65 to 85 percent of silver powder, 2 to 8 percent of lead-free glass powder, 10 to 25 percent of organic carrier and 0.1 to 3 percent of additive. The paste adopts the lead-free glass powder of Si-B-Bi-Al-Ti-Zn-O series to replace the traditional lead-bearing glass powder; and the series glass powder has lower softening point, can lead the silver electrode to have good adhesive force after sintering, and ensures the silver electrode to be well contacted with a silicon substrate. In addition, zinc resinate is used as the additive in the invention, not only can well improve the printing performance of the paste, but also can improve the electrical property of the electrode.

The invention discloses a method for manufacturing a silicon solar cell. In the process of manufacturing a PN junction on a silicon wafer, a selective diffusion technology method is adopted, i,e. laser is utilized to heat a position, on which a positive electrode intends to be manufactured, on the surface of the silicon wafer; and under the action of heating, phosphorus in a phosphorus source uniformly adhered on the surface diffuses towards the inner of the silicon wafer, thus a heavy doping zone with smaller sheet resistance is formed at the position on which the positive electrode intends to be manufactured to effectively reduce the sheet resistance of the silicon solar cell, thereby not only being beneficial for increasing the open-circuit voltage of the silicon solar cell; the increase of the open-circuit voltage effectively improves the conversion efficiency of the silicon solar cell, reduces ohmic contact of a metal electrode and the silicon solar cell, thereby reducing the series resistance of the silicon solar cell, and being capable of meeting the purpose of industrialized production better.

The invention provides a sintering method, and in particular relates to a method for rapidly sintering a solar wafer. A rapid thermal processing way is adopted to sinter large-area cells of silk-screen printing. The method comprises the following steps of: conveying, drying and exhausting cokes, rapidly heating to sinter as well as sintering at a high temperature and cooling. The method has the beneficial effects that the passivation effect is good, the minority carrier lifetime is improved greatly, the contact resistance of a Ag (silver) electrode and the quality of Al-BSFs (aluminum back surface fields) for the cells can be improved, the thermal stress is reduced, the contact resistances of solar cells are reduced obviously so as to improve the utilization of short wave spectra, the evenly good Al-BSFs are formed to improve the open-circuit voltages and filling factors of the cells, the warping of the cells is reduced, and the conversion efficiency and finished product ratio of the cells can be improved.

The invention belongs to the field of photoelectric devices, and discloses an alloy electrode capable of improving the efficiency and the stability of a solar cell. The alloy electrode is a binary or complex alloy electrode formed in the mode that precious metal silver is combined with metal such as aluminum, titanium, zinc, copper and/or magnesium. The invention further discloses the solar cell with the alloy electrode serving as the cathode or the anode of the cell. By means of the alloy electrode and the solar cell, matching between the energy level of the alloy electrode and the energy level of a carrier transport layer is easily improved, the contact barrier is reduced, and the efficiency of the cell is improved; silver atoms in the alloy electrode are slowly diffused to the carrier transport layer and an optical active layer, and therefore the stability of the cell can be improved; the use amount of silver materials in a unit area of the cell is decreased, the cost of the cell is easily controlled, and resources are saved.

The invention relates to an inverted gradient bulk heterojunction perovskite solar cell on the basis of a gallium oxide protective layer and a method for preparing the inverted gradient bulk heterojunction perovskite solar cell. The inverted gradient bulk heterojunction perovskite solar cell which is a perovskite cell comprises a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an electron transport layer and metal electrodes. The inverted gradient bulk heterojunction perovskite solar cell and the method have the advantages that a high-quality gallium oxide thin film is prepared by the aid of low-temperature deposition atomic layer bottom sinking processes with simple technologies and is used as a cushion layer between the electron transport layer and the metal electrodes, and accordingly the photovoltaic performance of devices can be effectively improved; the gallium oxide thin film with inorganic and hydrophobic characteristics can be used as the protective layer, accordingly, cell erosion due to external environments can be effectively isolated, and the stability of the devices can be enhanced; non-fullerene materials IDIC are dissolved in a green and environment-friendly solvent ethyl acetate to prepare gradient heterojunction perovskite thin films, accordingly, defects of perovskite can be effectively passivated, the performance of the devices can be enhanced, and thin film preparation toxic environments can be relieved.

The embodiment of the invention provides a photosensitive assembly and a preparation method thereof, an array substrate and a display device, and relates to the technical field of displaying. A dark current of photodiode can be reduced, and the detection effect of the photodiode can be improved. The photosensitive assembly comprises a switching unit comprising an active layer, and the photodiode;the photodiode comprises a P-type semiconductor layer and an N-type semiconductor layer which are arranged in a stacked mode; the N-type semiconductor layer comprises a direct facing part directly facing the P-type semiconductor layer, and an extension part extending from the direct facing part out of the boundary of the P-type semiconductor layer; and at least part of the extension part is used as the active layer.

The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator, a manufacturing method thereof and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top, a cavity is formed between the substrate and the multilayer structure, the lower electrode layer or the upper electrode layer is internally provided with a groove, and the groove is filled with a filling material different from the electrode material of the corresponding electrode layer. According to the resonator, the cavity with the lower half cavity and the upper half cavity is formed, the groove is formed in the lower electrode layer or the upper electrode layer, and the groove is filled with the filling material different from the electrode materialof the corresponding electrode layer, so that a novel bulk acoustic wave resonator structure is formed, and the resonator has relatively good performance.

The invention discloses a method of improving parallel resistance in photovoltaic cells. A production process of a selective emitter junction cell includes: producing a silicon wafer comprising an emitter junction; setting a mask on the front surface of the silicon wafer to protect an area to be metalized on the front surface of the silicon wafer and the edge of the front surface of the silicon wafer; etching the front surface of the silicon wafer; removing the mask; and etching the edges of the back and front surfaces of the silicon wafer. The mask comprises a mask outer frame disposed at the edge of the front surface of the silicon wafer. The invention further discloses a selective emitter junction cell produced by the production process.

The invention relates to a dye-sensitized solar cell which is characterized by comprising a first substrate, a second substrate and a photovoltaic conversion layer. The photovoltaic conversion layer is disposed between the first substrate and the second substrate and comprises an electrolytic condenser and dye adsorption units, and the dye adsorption units are distributed in the electrolytic condenser. The dye-sensitized solar cell and a diode are arranged on the top of a lampshade, is connected to a storage battery in a barrel through a conductor wire.

The invention discloses a solar cell and a preparation method thereof, belongs to the technical field of solar cells, and solves the problems of relatively low cell yield and the like caused by relatively high leakage current of a solar cell in the prior art. The invention provides a solar cell. The solar cell comprises a silicon substrate body, the front face of the silicon substrate body comprises a first surface, the first surface comprises a doped region and a non-doped region, the non-doped region is distributed in the peripheral edge region of the doped region, the width of the non-dopedregion is not larger than 2 mm, and a doped layer is arranged on the upper surface of the doped region. The solar cell is low in leakage current.

The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition, electrode printing, sintering and test sorting. The secondary edge etching process is introduced in the steps, a silicon nitride layer on the edge of a crystalline silicon cell piece is removed, the parallel resistance of the crystalline silicon cell is increased, and the photoelectric conversion efficiency of the crystalline silicon cell is improved. In addition, the secondary edge etching process can be selectively introduced after the silicon nitride antireflection layer deposition process and the silicon nitride layer on the edge of the cell is removed; or the secondary edge etching process can be selectively introduced after the sintering process and the silicon nitride layer on the edge of the cell is removed. The method is simple, easy to operate and free of limitation to other process steps.

The invention relates to a high-sensitivity organic photodiode which comprises a photosensitive layer, wherein the photosensitive layer is of a bulk heterojunction structure, that is, (i) the photosensitive layer comprises a donor material D1 and an acceptor material A1; and donor materials D2-Dn, wherein the energy gap of the donor materials D2-Dn is larger than the energy gap of the donor material D1 and/or the energy gap of the acceptor material A1; or (ii)the photosensitive layer comprises a donor material D1 and an acceptor material A1; and acceptor materials A2-An, wherein the energy gap of the acceptor materials A2-An is larger than the energy gap of the donor material D1 and/or the energy gap of the acceptor material A1. Due to the addition of new components in the photosensitive layer, the defect state density of impurities in a bulk heterojunction energy gap is effectively reduced, a trap auxiliary composite channel of photogenerated charges is inhibited, the external quantum efficiency is enhanced, dark current is reduced, and the specific detection rate of the device is further improved. The invention also relates to an array formed by the same and a related preparation method.

The invention discloses a method for preparing a first scribed line and a third scribed line of a thin-film solar cell. The method mainly comprises the following steps that an insulating layer is formed on a first scribed line, and/or an insulating layer is formed on a third scribed line, the width of the insulating layer is 3-5 microns wider than that of the corresponding scribed line, and the thickness of the insulating layer is 100-5000 nanometers; the method for forming the insulating layer comprises a silk-screen printing method, a screen evaporation method and an ink-jet printing method,and the insulating layer is composed of transparent insulating substances. The invention further discloses a scribing method of the thin-film solar cell. By adopting the method provided by the invention, the parallel resistance and the open-circuit voltage can be improved on the premise of not reducing the effective utilization area of the thin-film solar cell module, and the output efficiency ofthe thin-film solar cell is improved.

The invention discloses a film photovoltaic device and a manufacturing method thereof. The method comprises the following steps of step A, depositing a light absorption layer on a first electrode; step B, depositing an electronic extraction layer on the light absorption layer, wherein the material of the electronic extraction layer is a cross-linked nano-particle film formed through carrying out crosslinking treatment on a nanoparticle film; and step C, evaporating a second electrode on the electronic extraction layer and acquiring the film photovoltaic device. In the invention, the acquired cross-linked nano-particle film is applied in the film photovoltaic device manufactured through a solution method, a parallel resistance in the photovoltaic device can be greatly increased and a seriesresistance in the photovoltaic device is reduced so that the light current of a fill factor in the film photovoltaic device is increased, and then the photoelectric conversion efficiency of the device is improved.

The solar cell has an antireflection layer (2) on the outside of a transparent plastics, glass or crystalline substrate (4). A first layer on the inner side of the substrate is an electrode (8). It may act either as the cathode or the anode and may be made of aluminum, copper or ITO (Indium Tin Oxide). A first intermediate layer (10) has an asymmetrical conductivity and acts as an electron acceptor. It also acts as an optical antireflection layer. The next active layer (12) has an electron acceptor side (14) contacting the first intermediate layer and an electron donor side (16) contacting a second intermediate layer (18) and an electrode layer (20).