Film photovoltaic device and manufacturing method thereof
A thin-film photovoltaic and device technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve the problems of low parallel resistance, low photocurrent, high series resistance, etc., to reduce potential barriers and increase electrical coupling , Improve the effect of electrical performance
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2018-10-23
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Abstract
Description
technical field
[0001] The invention relates to the field of photovoltaic devices, in particular to a thin-film photovoltaic device and a preparation method thereof. Background technique
[0002] Photovoltaic devices refer to devices that can directly convert light energy into electrical energy by using the photovoltaic effect at the semiconductor interface.
[0003] In the process of preparing photovoltaic devices by solution method, oxide nanoparticles are one of the important solutions for forming corresponding oxide films, mainly because oxide nanoparticles (or spherical oxide nanocrystals) have good crystallinity, which ensures On the other hand, due to the good self-assembly of oxide nanoparticles into films, low-cost coating preparation processes can be applied. Common oxide nanoparticles include zinc oxide (ZnO x ) nanoparticles, titanium oxide (TiO x ) Nanoparticles, etc., the nanoparticle film is usually used in thin film photovoltaic devices as a semiconductor ...
Examples
Embodiment Construction
[0036] The present invention provides a thin-film photovoltaic device and its preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0037] A preferred embodiment of the preparation method of a thin film photovoltaic device of the present invention, including:
[0038] Step A, depositing a light absorbing layer on the first electrode;
[0039] Step B, depositing an electron extraction layer on the light-absorbing layer, the material of the electron extraction layer is a cross-linked nano-particle film formed by cross-linking the nano-particle film;
[0040] Step C, evaporating a second electrode on the electron extraction layer to obtain a thin film photovoltaic device.
[0041] Specifical...