Method for preparing first scribed line and third scribed line of thin-film solar cell

A technology for solar cells and scribe lines, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low light transmittance of insulating layers, affecting the effective area of ​​thin-film solar cell components, and reducing parallel resistance

Active Publication Date: 2020-11-06
唐山科莱鼎光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the resistance of semiconductor materials with an absorbing layer decreases under light conditions, resulting in a decrease in parallel r...

Method used

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  • Method for preparing first scribed line and third scribed line of thin-film solar cell
  • Method for preparing first scribed line and third scribed line of thin-film solar cell
  • Method for preparing first scribed line and third scribed line of thin-film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] Soda-lime glass is used as the substrate 1 of the thin-film solar cell, and it is cleaned by the existing technology, and then a back electrode 2 of 800 nm is prepared on the substrate 1 by magnetron sputtering, and the back electrode 2 is made of metal molybdenum Composition, the absorption layer 3 is copper indium gallium selenide.

[0093] The following method is used to prepare and scribe thin film solar cells, including the following steps:

[0094] Step 1) Use a picosecond laser to generate a laser with a wavelength of 1064 nanometers and a frequency of 70 kHz at a power of 0.9 W. Under the condition of a marking speed of 2000 mm / s, the incident mode from the back (that is, incident from the glass surface) is adopted. Scribing the back electrode 2 to form a first scoring line 7;

[0095] Step 2) Adopt the method of screen printing to cover the insulating layer 11 on the first line 7, the insulating layer 11 is parallel to the first line 7, the composition of the ...

Embodiment 2

[0103] Soda-lime glass is used as the substrate 1 of the thin-film solar cell, and it is cleaned by the existing technology, and then a back electrode 2 of 800 nm is prepared on the substrate 1 by magnetron sputtering, and the back electrode 2 is made of metal molybdenum Composition, the absorption layer 3 is perovskite.

[0104] The following method is used to prepare and scribe thin film solar cells, including the following steps:

[0105] Step 1), step 3) to step 5) are identical with embodiment 1;

[0106] Step 2) Adopt high-power laser focused irradiation, the focused spot diameter is 15 microns, the power of the laser is 3W, and the laser with a wavelength of 532nm and a frequency of 400kHz is applied to the glass on the bottom surface of the first line 7. The melted glass is solidified on both sides of the first reticle 7 to form an insulating layer 11 with a thickness of 200 nanometers. The width of the insulating layer 11 is 4 microns wider than the first reticle 7, ...

Embodiment 3

[0111] Soda-lime glass is used as the substrate 1 of the thin-film solar cell, and it is cleaned by the existing technology, and then the back electrode 2 of 800 nanometers is prepared on the substrate 1 by magnetron sputtering, and the back electrode 2 is made of metal molybdenum, the absorption layer 3 is cadmium telluride.

[0112] The following method is used to prepare and scribe thin film solar cells, including the following steps:

[0113] Step 1), step 3) to step 5) are identical with embodiment 1;

[0114] Step 2) Inkjet printing is adopted, and an inkjet device is set at the same position as the laser head forming the first reticle 7, and the ink is replaced with silicon tetrachloride liquid, so that a layer is covered on the first reticle 7 The silicon tetrachloride liquid is then put into an oven at 260° C. for curing, and the holding time is 30 minutes. The silicon tetrachloride is converted into silicon dioxide, thus forming a transparent insulating layer 11, wh...

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Abstract

The invention discloses a method for preparing a first scribed line and a third scribed line of a thin-film solar cell. The method mainly comprises the following steps that an insulating layer is formed on a first scribed line, and/or an insulating layer is formed on a third scribed line, the width of the insulating layer is 3-5 microns wider than that of the corresponding scribed line, and the thickness of the insulating layer is 100-5000 nanometers; the method for forming the insulating layer comprises a silk-screen printing method, a screen evaporation method and an ink-jet printing method,and the insulating layer is composed of transparent insulating substances. The invention further discloses a scribing method of the thin-film solar cell. By adopting the method provided by the invention, the parallel resistance and the open-circuit voltage can be improved on the premise of not reducing the effective utilization area of the thin-film solar cell module, and the output efficiency ofthe thin-film solar cell is improved.

Description

technical field [0001] The invention belongs to the field of thin-film solar cells, and relates to a preparation method for thin-film solar cells, in particular to a method for preparing the first and third scoring lines of thin-film solar cells. Background technique [0002] With the depletion of fossil energy and the increasing environmental pollution caused by the extensive use of fossil energy, people are eager to find a renewable and non-polluting new energy to replace fossil energy. Solar energy is the most important source of this new energy. one of the candidates. Solar energy is inexhaustible and inexhaustible, which is an important way to solve the energy crisis, and solar cell power generation is the most important choice. Since the solar cell was invented, it has gone through the first generation of monocrystalline silicon solar cells, the second generation of polycrystalline silicon, amorphous silicon and other solar cells, and entered the stage of the third ge...

Claims

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Application Information

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IPC IPC(8): H01L31/0463H01L31/18
CPCH01L31/0463H01L31/18Y02E10/50Y02P70/50
Inventor 戴万雷
Owner 唐山科莱鼎光电科技有限公司
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