Method for rapidly sintering solar wafer

A solar silicon wafer, rapid sintering technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of excessive positive electrode contact resistance, reduced minority carrier lifetime, and poor hydrogen passivation effect. Achieve the effects of increasing parallel resistance, increasing minority carrier lifetime, and reducing thermal stress

Inactive Publication Date: 2012-01-25
浙江天明国际科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The current conventional sintering process can easily lead to excessive contact resistance of the positive electrode or the battery is burned through, and there is also the problem of poor hydrogen passivation effect, which reduces the minority carrier lifetime, resulting in low conversion efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1: a kind of method for fast sintering of solar silicon chip, carry out according to the following steps:

[0039] (1), transmission:

[0040] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;

[0041] (2), drying and decoking:

[0042] After step (1), pass through three drying zones and three transition zones, with a total length of 4880mm and a speed of 70-80mm / s, to dry the slurry and discharge organic matter in the slurry; the temperature in the first drying zone is 150°C, The length is 1200mm; the temperature of the second drying zone is 180°C and the length is 1200mm; the temperature of the third drying zone is 170°C and the length is 1200mm; the temperature of the first transition zone is 350°C and the length is 300mm; the temperature of the second tran...

Embodiment 2

[0047] Embodiment 2: a kind of method for fast sintering of solar silicon chip, carry out according to the following steps:

[0048] (1), transmission:

[0049] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;

[0050] (2), drying and decoking:

[0051] After step (1), pass through three drying zones and three transition zones, with a total length of 4880mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 170°C, The length is 1200mm; the temperature of the second drying zone is 200°C and the length is 1200mm; the temperature of the third drying zone is 180°C and the length is 1200mm; the temperature of the first transition zone is 400°C and the length is 300mm; the temperature of the secon...

Embodiment 3

[0057] A method for rapid sintering of solar silicon wafers is carried out in the following steps:

[0058] (1), transmission:

[0059] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;

[0060] (2), drying and decoking:

[0061] After step (1), pass through three drying zones and three transition zones, with a total length of 4880mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 180°C, The length is 1200mm; the temperature of the second drying zone is 220°C and the length is 1200mm; the temperature of the third drying zone is 200°C and the length is 1200mm; the temperature of the first transition zone is 450°C and the length is 300mm; the temperature of the second transition zone The temp...

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Abstract

The invention provides a sintering method, and in particular relates to a method for rapidly sintering a solar wafer. A rapid thermal processing way is adopted to sinter large-area cells of silk-screen printing. The method comprises the following steps of: conveying, drying and exhausting cokes, rapidly heating to sinter as well as sintering at a high temperature and cooling. The method has the beneficial effects that the passivation effect is good, the minority carrier lifetime is improved greatly, the contact resistance of a Ag (silver) electrode and the quality of Al-BSFs (aluminum back surface fields) for the cells can be improved, the thermal stress is reduced, the contact resistances of solar cells are reduced obviously so as to improve the utilization of short wave spectra, the evenly good Al-BSFs are formed to improve the open-circuit voltages and filling factors of the cells, the warping of the cells is reduced, and the conversion efficiency and finished product ratio of the cells can be improved.

Description

technical field [0001] The invention relates to a sintering method, in particular to a method for rapid sintering of solar silicon wafers, which uses rapid heat treatment to sinter screen-printed large-area solar cells. Background technique [0002] At present, as an inexhaustible clean energy source, the development and utilization of solar energy is attracting great attention never before. Although people have carried out many years of research and development on various types of solar cells, so far, the solar cells that have achieved large-scale commercialization are still non-toxic crystalline silicon cells. In the production process of monocrystalline solar cells, "sintering" is a very important process, and the rapid sintering furnace is used in the production process. Its function is to sinter the electrode printed on the silicon wafer into a battery at high temperature, and finally make the electrode and the silicon wafer itself form an ohmic contact, thereby improv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘亮陈磊徐永洋
Owner 浙江天明国际科技有限公司
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