Method for rapidly sintering solar wafer
A solar silicon wafer, rapid sintering technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of excessive positive electrode contact resistance, reduced minority carrier lifetime, and poor hydrogen passivation effect. Achieve the effects of increasing parallel resistance, increasing minority carrier lifetime, and reducing thermal stress
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0038] Embodiment 1: a kind of method for fast sintering of solar silicon chip, carry out according to the following steps:
[0039] (1), transmission:
[0040] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;
[0041] (2), drying and decoking:
[0042] After step (1), pass through three drying zones and three transition zones, with a total length of 4880mm and a speed of 70-80mm / s, to dry the slurry and discharge organic matter in the slurry; the temperature in the first drying zone is 150°C, The length is 1200mm; the temperature of the second drying zone is 180°C and the length is 1200mm; the temperature of the third drying zone is 170°C and the length is 1200mm; the temperature of the first transition zone is 350°C and the length is 300mm; the temperature of the second tran...
Embodiment 2
[0047] Embodiment 2: a kind of method for fast sintering of solar silicon chip, carry out according to the following steps:
[0048] (1), transmission:
[0049] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;
[0050] (2), drying and decoking:
[0051] After step (1), pass through three drying zones and three transition zones, with a total length of 4880mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 170°C, The length is 1200mm; the temperature of the second drying zone is 200°C and the length is 1200mm; the temperature of the third drying zone is 180°C and the length is 1200mm; the temperature of the first transition zone is 400°C and the length is 300mm; the temperature of the secon...
Embodiment 3
[0057] A method for rapid sintering of solar silicon wafers is carried out in the following steps:
[0058] (1), transmission:
[0059] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;
[0060] (2), drying and decoking:
[0061] After step (1), pass through three drying zones and three transition zones, with a total length of 4880mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 180°C, The length is 1200mm; the temperature of the second drying zone is 220°C and the length is 1200mm; the temperature of the third drying zone is 200°C and the length is 1200mm; the temperature of the first transition zone is 450°C and the length is 300mm; the temperature of the second transition zone The temp...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com