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Bulk acoustic wave resonator, manufacturing method thereof and semiconductor device

A technology of bulk acoustic wave resonator and manufacturing method, which is applied to electrical components, impedance networks, etc., can solve problems such as performance parameter degradation, and achieve the effects of improving acoustic impedance ratio, reducing passband insertion loss, and reducing leakage

Active Publication Date: 2020-03-06
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

An increase in the electromechanical coupling coefficient of a resonator often leads to a decrease in other performance parameters

Method used

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  • Bulk acoustic wave resonator, manufacturing method thereof and semiconductor device
  • Bulk acoustic wave resonator, manufacturing method thereof and semiconductor device
  • Bulk acoustic wave resonator, manufacturing method thereof and semiconductor device

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Embodiment Construction

[0055] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0056] The present invention will be further described in detail below with reference to the drawings and specific embodiments.

[0057] The embodiment of the present invention provides a bulk acoustic wave resonator. The bulk acoustic wave resonator includes a substrate and a multilayer structure. Wherein, a multilayer structure is formed on the substrate, and the multilayer structure includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer from bottom to top. A cavity is formed between the substrate and the multilayer structure. The c...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator, a manufacturing method thereof and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top, a cavity is formed between the substrate and the multilayer structure, the lower electrode layer or the upper electrode layer is internally provided with a groove, and the groove is filled with a filling material different from the electrode material of the corresponding electrode layer. According to the resonator, the cavity with the lower half cavity and the upper half cavity is formed, the groove is formed in the lower electrode layer or the upper electrode layer, and the groove is filled with the filling material different from the electrode materialof the corresponding electrode layer, so that a novel bulk acoustic wave resonator structure is formed, and the resonator has relatively good performance.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a bulk acoustic wave resonator, a method of manufacturing the same, and a semiconductor device. Background technique [0002] Resonators can be used in various electronic applications to implement signal processing functions. For example, some cellular phones and other communication devices use resonators to implement filters for transmitted and / or received signals. Several different types of resonators can be used according to different applications, such as film bulk acoustic resonators (FBAR), coupled resonator filters (SBAR), stacked bulk acoustic resonators (SBAR), double bulk acoustic resonators ( DBAR) and solid state mounted resonator (SMR). [0003] A typical acoustic resonator includes an upper electrode, a lower electrode, a piezoelectric material between the upper and lower electrodes, an acoustic reflection structure under the lower electrode, and a substrat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H3/02
CPCH03H9/02015H03H9/02047H03H3/02H03H2003/023Y02D30/70
Inventor 李亮钱丽勋吕鑫梁东升刘青林马杰高渊丁现朋冯利东崔玉兴张力江刘相伍杨志商庆杰李宏军李丽卜爱民王强付兴昌
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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