Production technology for anti-reflection film of solar cell

Abstract

The invention discloses an improved SixNy antireflection coating growth technique which can effectively reduce the reflection loss of surface incident light, simultaneously enhance the compactness of a surface antireflection coating and enhance the blocking effect on harmful impurities, such as Na<+>, Fe<+>, etc. The power of a medium-high frequency plasma source in the growth technique process is 800W, the environmental temperature in a reaction chamber is 480 DEG C, the flow rate of silane is 300sccm, the flow rate of ammonia maintains the technological process parameter of 1,800sccm, and the advance and retreat speed of a carrying boat of a technological silicon wafer is 600mm / min, thereby ensuring the grown coating to be capable of carrying out the timely passivation and annealing (carrying out the passivation and the annealing during the growth), therefore, the compactness thereof is enhanced and the surface radiation damage to PN junction can be repaired timely and effectively. The growth technique is applicable to the production of crystalline silicon solar cells.

Description

technical field [0001] The invention relates to a production process of an anti-reflection film for solar cells, in particular to the improvement of the production process for a silicon nitride anti-reflection film on the surface of a crystalline silicon solar cell suitable for large-scale industrial production. The invention can produce Si with good compactness, good uniformity and good adhesion. x N y Anti-reflective coating. Background technique [0002] With the increasing awareness of environmental protection, international and domestic development and utilization of renewable energy, especially solar energy, has drawn more and more attention. The cost of photovoltaic power generation has dropped by two orders of magnitude in the past 30 years, and the photovoltaic industry has maintained an annual growth rate of 40% to 50% in the past 5 years. From 2001 to 2006, the global solar cell output increased from 386MW to 2500MW, an increase of 5.48 times, with an annual in...

AI Technical Summary

Problems solved by technology

At present, the industrial production process in the industry adopts the method of PECVD plasma chemical vapor deposition, and the silicon wafer is placed in the plasma field to directly deposit a layer of Si on the surface of the silicon wafer. x N y , Thin film, this is a conventional and mature anti-reflection film growth process, usually the thickness of the film layer is 80±3nm, the refractive index is 2.05±0.02, and the anti-reflection effect of the anti-reflection film on the incident light can reach 5~ 6%, but due to the faster growth rate (0.8nm / s), the film texture is looser, not only prone to PN junction "burn-through" phenomenon, but also harmful impurities (such as Na + , Fe + ) has poor blocking ability, which makes it easy to produce process fluctuations in the battery manufacturing process

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