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Inverted gradient bulk heterojunction perovskite solar cell on basis of gallium oxide protective layer and method for preparing inverted gradient bulk heterojunction perovskite solar cell

A solar cell and bulk heterojunction technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem of low stability of perovskite solar cells, achieve good photoelectric conversion efficiency and stable performance, and thin film Smooth and compact effect with simple steps

Active Publication Date: 2018-07-13
WUHAN UNIV
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  • Claims
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Problems solved by technology

[0007] Aiming at the problems that the existing perovskite solar cells are not stable, and the preparation process requires toxic solvents, and the perovskite film has defects, the present invention provides an inorganic wide bandgap tunneling material based on Ga 2 o 3 As a protective buffer layer, use green non-toxic ethyl acetate as an anti-solvent to dissolve an appropriate amount of condensed dithiophene-based cyclic electron acceptor IDIC (diaminostyrene-diaminoethylene-3-butanediene Gradient heterojunction perovskite thin film of en-3-indanone) has a kind of perovskite solar cell and its preparation method

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  • Inverted gradient bulk heterojunction perovskite solar cell on basis of gallium oxide protective layer and method for preparing inverted gradient bulk heterojunction perovskite solar cell
  • Inverted gradient bulk heterojunction perovskite solar cell on basis of gallium oxide protective layer and method for preparing inverted gradient bulk heterojunction perovskite solar cell
  • Inverted gradient bulk heterojunction perovskite solar cell on basis of gallium oxide protective layer and method for preparing inverted gradient bulk heterojunction perovskite solar cell

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[0038]The present invention will be further described below in conjunction with the examples, and this description is only for better illustrating the present invention rather than limiting it. The invention is not limited to the particular examples and implementations described herein. Any person skilled in the art can easily make further improvements and perfections without departing from the spirit and scope of the present invention, and all fall within the protection scope of the present invention.

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Abstract

The invention relates to an inverted gradient bulk heterojunction perovskite solar cell on the basis of a gallium oxide protective layer and a method for preparing the inverted gradient bulk heterojunction perovskite solar cell. The inverted gradient bulk heterojunction perovskite solar cell which is a perovskite cell comprises a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an electron transport layer and metal electrodes. The inverted gradient bulk heterojunction perovskite solar cell and the method have the advantages that a high-quality gallium oxide thin film is prepared by the aid of low-temperature deposition atomic layer bottom sinking processes with simple technologies and is used as a cushion layer between the electron transport layer and the metal electrodes, and accordingly the photovoltaic performance of devices can be effectively improved; the gallium oxide thin film with inorganic and hydrophobic characteristics can be used as the protective layer, accordingly, cell erosion due to external environments can be effectively isolated, and the stability of the devices can be enhanced; non-fullerene materials IDIC are dissolved in a green and environment-friendly solvent ethyl acetate to prepare gradient heterojunction perovskite thin films, accordingly, defects of perovskite can be effectively passivated, the performance of the devices can be enhanced, and thin film preparation toxic environments can be relieved.

Description

technical field [0001] The invention relates to a gallium oxide (Ga 2 o 3 The invention relates to an inverted gradient body heterojunction perovskite solar cell with a protective layer and a preparation method thereof, belonging to the field of optoelectronic materials and devices. Background technique [0002] In recent years, the energy crisis and environmental pollution have become more and more urgent, and the development of clean and sustainable energy is becoming more and more important to the development of human society. As a sustainable and clean energy, solar energy can be directly converted into electrical energy, providing human Energy has great application prospects. [0003] Perovskite solar cells have developed rapidly in recent years, and the conversion efficiency has been comparable to that of silicon-based solar cells. Organic-inorganic hybrid perovskite materials have the characteristics of high light absorption coefficient, high carrier mobility, low ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/166H10K50/15H10K50/85H10K71/00
Inventor 方国家马俊杰
Owner WUHAN UNIV
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