3results about How to "Reduce photoelectric conversion efficiency" patented technology

This invention discloses a lithium-doped crystalline silicon photovoltaic cell, silicon wafer, ingot, and doping method thereof, belonging to the field of photovoltaic cells. By combining appropriate amounts of impurity lithium and impurity boron with lithium to form p-type first lithium silicon, lithium, with an electronegativity of only 0.98, saturates some of the boron atom holes when not exposed to high-energy space radiation. Upon exposure to high-energy space radiation, on the one hand, the outer electrons of lithium are easily attracted by electron traps, objectively passivating the electron traps and "releasing" the boron atom holes. As a result, the majority carrier holes in the p-type silicon material increase, and the conductivity increases instead of decreasing. On the other hand, due to the "accompaniment" of positive lithium ions to the electron traps, the probability of the electron traps capturing photogenerated minority carrier holes is greatly reduced, which is beneficial to improving the photoelectric conversion efficiency of the space cell.

The invention provides a two-dimensional / three-dimensional perovskite heterojunction subjected to solvent heat treatment, a preparation method and application. After the two-dimensional perovskite passivation layer is prepared on the surface of the three-dimensional lead halide perovskite thin film, solvent heat treatment is carried out through AX / IPA mixed steam, lead halide by-products at a two-dimensional / three-dimensional perovskite heterojunction interface are eliminated, and the number of halide octahedron layers in two-dimensional perovskite is increased. According to the invention, the non-radiation load center on the surface of the film is effectively reduced, the passivation effect of the two-dimensional perovskite is enhanced, and the photoelectric conversion efficiency is improved; moreover, the out-of-plane transmission capability of carriers is enhanced, the conductivity in the vertical direction is improved, the current loss is reduced, and the responsivity and the detection rate of the device are improved. The problem of solvent incompatibility in two-dimensional / three-dimensional perovskite heterojunction prepared by a traditional solution method is solved, effective passivation of surface defects of the perovskite thin film is realized, and powerful technical support is provided for preparation of high-performance stable perovskite thin film photoelectric devices.

The invention relates to a photovoltaic cell alkaline polishing method capable of improving a liquid carrying phenomenon, which comprises a step of carrying out alkaline polishing on a silicon wafer, and in the alkaline polishing step, the alkaline polishing temperature is 55-60 DEG C, and the alkaline polishing time is 150-200s. The alkaline polishing temperature and time are adjusted, so that the corrosion amount of the silicon wafer is reduced, the thickness of the silicon wafer is ensured, the risk that the bending degree is too large due to the fact that the silicon wafer is too thin is reduced, and the silicon wafer is prevented from being attached and carrying liquid; meanwhile, the reaction intensity of the tank body is reduced, the integrity of the silicon wafer in the basket is improved, and the tooth staggering risk is reduced, so that the liquid carrying phenomenon is reduced.