This invention discloses a
lithium-doped
crystalline silicon photovoltaic
cell,
silicon wafer,
ingot, and
doping method thereof, belonging to the field of photovoltaic cells. By combining appropriate amounts of
impurity lithium and
impurity boron with
lithium to form p-type first lithium
silicon, lithium, with an
electronegativity of only 0.98, saturates some of the
boron atom holes when not exposed to high-energy
space radiation. Upon
exposure to high-energy
space radiation, on the one hand, the outer electrons of lithium are easily attracted by
electron traps, objectively passivating the
electron traps and "releasing" the
boron atom holes. As a result, the majority carrier holes in the p-type
silicon material increase, and the
conductivity increases instead of decreasing. On the other hand, due to the "accompaniment" of positive lithium ions to the
electron traps, the probability of the electron traps capturing photogenerated minority carrier holes is greatly reduced, which is beneficial to improving the
photoelectric conversion efficiency of the space
cell.