45results about How to "Reduce photoelectric conversion efficiency" patented technology

The invention discloses an organic-inorganic hybrid perovskite solar cell and a preparation method thereof. The preparation method comprises the steps of firstly, depositing a semiconductor compact layer on a transparent conductive electrode by a spray pyrolysis method; secondly, spraying a mixed positive ion organic-inorganic hybrid perovskite solution on the semiconductor compact layer by a thermal substrate spraying method to form a hybrid positive ion organic-inorganic hybrid perovskite thin film light absorption layer; thirdly, preparing a hole transmission layer on a surface of the light absorption layer; and finally, evaporating a gold electrode by thermal evaporation to obtain the organic-inorganic hybrid perovskite solar cell. The organic-inorganic hybrid perovskite solar cell is prepared by the thermal substrate spraying method, the preparation process is simplified, a large-area perovskite thin film can be rapidly prepared, and application on a large scale is facilitated; and moreover, the proportion among constituents of the hybrid positive ion organic-inorganic hybrid perovskite solution is optimized, the grain size of the obtained solar cell exceeds 500 nanometers, and the solar cell is relatively good in stability.

The invention discloses a manufacturing method of an N-type solar battery. The method comprises the following steps of: providing a silicon wafer to be treated; removing a damaged layer on the surface of the silicon wafer; carrying out surface texturing on the silicon wafer; washing the silicon wafer to remove metal impurities remaining on the surface of the silicon wafer; and carrying out boron diffusion on the dried silicon wafer. According to the technical scheme disclosed by the invention, parts of the metal impurities on the surface of the silicon wafer can be removed in a working procedure of removing the damaged layer; after the silicon wafer is textured and before the boron diffusion is carried out, the silicon wafer is washed; a reagent which does not damage surface textured face of the silicon wafer, does not influence the boron diffusion effect of the silicon wafer and is used for transferring the metal impurities on the surface of the silicon wafer into a compound which can be dissolved into water is used for washing the silicon wafer to remove the residual metal impurities on the surface of the silicon wafer, so that the diffusion and blocking quality is guaranteed in the boron diffusion process, and the photoelectric conversion efficiency of the N-type solar battery is further improved.

The invention discloses a water chilling ingot furnace and an ingot casting process thereof. A water cooling disc (13) is arranged at the lower end of a heat exchange table (11), located at the lower end of a bottom heater (7), internally provided with a flow cavity and provided with a water inlet (9) and a water outlet (10), wherein the water inlet (9) and the water outlet (10) are communicated through the flow cavity, and are respectively communicated with the outer end of a furnace body (1). The water chilling ingot furnace disclosed by the invention has the beneficial effects that the problem of influence on formation of columnar crystals due to transfer of heat of a crucible in a radial direction caused by lifting an insulating cage to dissipate heat from a side is solved by way of replacing the original mode of lifting the insulating cage to dissipate heat by water cooling; an insulating cage body in a lifting process is prevented from rubbing with the top of the insulating cage to generate carbon dust which is easy to enter the crucible to increase carbon impurity content of a silicon ingot so as to cause lattice deformation.

A solar cell electrode printing screen comprises a first screen and a second screen; the first screen comprises a first template; a plurality of first thin grids are formed in the first template; the first template is provided with alignment holes and wedge-shaped holes; the second screen comprises a second template; the second template is provided with a plurality of second thin grids and main grids; the second thin grids and the main grids are intersected; the distance between axes of the adjacent two second thin grids is equal to that between axes of the adjacent two first thin grids; the width of the second thin grids is smaller than or equal to that of the first thin grids; the main grids are provided with alignment portions; one ends of the main grids are provided with sharp corner hollow-outs; the shortest distance between edges of the alignment portions and end surfaces of the top ends of the sharp corner hollow-outs is equal to that between the edges of the alignment holes and the edges of the wedge-shaped holes. According to the solar cell electrode printing screen, substrates after the second screen and the first screen are printed are accurately aligned and dislocation of a thin grid line during printing at the second time and a thin grid line during printing at the first time is avoided. The invention also provides a solar cell electrode and a manufacturing method thereof.

The invention discloses a solar battery piece diffusion process. The solar battery piece diffusion process comprises the following steps of B, heating a furnace chamber of a diffusion furnace to a first temperature, and continuously introducing pure nitrogen; C, maintaining the furnace chamber at the first temperature, and introducing pure nitrogen and oxygen to the furnace chamber to oxidize thebattery piece; D, carrying out low-temperature diffusion at the first temperature, and continuously introducing pure nitrogen, phosphorus source-carrying nitrogen and oxygen into the furnace chamber in the process; E, heating the furnace chamber of the diffusion furnace to a second temperature, simultaneously pumping phosphorus atoms, and continuously introducing pure nitrogen; F, maintaining thefurnace chamber at the second temperature and carrying out high-temperature diffusion, and continuously introducing pure nitrogen, phosphorus source-carrying nitrogen and oxygen into the furnace chamber in the process; G, heating the furnace chamber of the diffusion furnace to a third temperature, and simultaneously pumping the phosphorus atoms, and continuously introducing pure nitrogen; H, continuously pumping the phosphorus atoms at the third temperature, and continuously introducing pure nitrogen and oxygen into the furnace chamber in the process; and I, performing cooling and carrying outoxidation and simultaneously pumping the phosphorus atoms, and continuously introducing pure nitrogen and oxygen into the furnace chamber in the process.

A stacked photoelectric converter comprising a plurality of stacked photoelectric conversion units (3;5) each including one conductivity type layer (31;51), a photoelectric converting layer (32;52) of substantially intrinsic semiconductor, and a reverse conductivity type layer (33;53) that are formed on a substrate (1) sequentially from the light incident side. At least one of the reverse conductivity type layer (33) in the front photoelectric conversion unit (3) arranged relatively on the light incident side and the one conductivity type layer (51) in the rear photoelectric conversion unit (5) arranged contiguously to the front photoelectric conversion unit (3) includes a silicon composite layer (4). The silicon composite layer (4) has a thickness of 20-130 nm and an oxygen concentration of 25-60 atm%.

Provided is a laminate of a thermoplastic resin layer and a base, which has excellent transparency and is free from the occurrence of "warping". The laminate is suitable for sealing and surface protection of photoelectric conversion elements. This laminate is obtained by bonding a base and a thermoplastic resin layer that has a thickness larger than 200 [mu]m but 500 [mu]m or less with an adhesive layer being interposed therebetween. The 180 DEG peel strength at 23 DEG C of the thermoplastic resin layer with respect to the adhesive layer is not less than 1.0 N / 25 mm. It is preferable that the total light transmittance of the laminate is not less than 80%.

The present invention discloses a novel device based on nanofluid and Fresnel concentrating photovoltaic heat. The device comprises a solar photovoltaic thermal CPV / T device array, a Fresnel condenser, a system nanofluid cooling working medium outlet, horizontal and vertical fixed shafts, a system nanofluid cooling working medium inlet, a horizontal row fixed array, a vertical row fixed array, a unit photovoltaic thermal device cooling working medium circulation outlet, a unit photovoltaic thermal device cooling working medium circulation inlet, and a nanofluid transportation pipeline. According to the device, the coupling of a solar photovoltaic systems and a solar thermal system is realized, the large area Fresnel condenser is used to concentrate sun radiation to solar photovoltaic thermal CPV / T devices, the frequency dividing absorbing radiation characteristic and efficient heat conduction characteristic of nanofluid are utilized, solar infrared light radiation is adsorbed at an upper layer flow channel, and PV modules are cooled. The light and heat conversion efficiency of solar energy is improved, the PV modules are cooled, high photoelectric conversion efficiency is maintained, and thus the comprehensive utilization of the solar energy is improved.

The invention relates to a photovoltaic cell photoelectric conversion efficiency integrated improvement method, and aims at solving the problem of low photoelectric conversion efficiency in the prior art. Protective glass is compounded on the surface of a photocell. The upper surface of the protective glass having upper conversion and lower conversion luminescent material is treated into the micro polygonal pyramid array structure surface by using the micro-machining technology. As for surface treatment, certain voltage is applied between a tool electrode and a protective glass electrode immersed in insulating liquid by using discharge or spark erosion of the micro-machining technology, and the electrodes are enabled to be close to each other to discharge to lead to electrocorrosion evaporation of the electrode and the glass, and the surface is treated into the micro polygonal pyramid array structure surface. The array structure surface is the rectangular pyramid micro-pyramid array structure surface or the triangular pyramid micro-pyramid array structure surface. The method has the advantages that photoelectric conversion efficiency improvement of solar spectrum full spectrum energy and long-time maintenance of the conversion efficiency can be realized and finally improvement of the photocell photoelectric conversion efficiency can be realized.

The present disclosure relates to an image sensor, an electronic device, and a manufacturing method thereof. In one embodiment, the present disclosure relates to a substrate of an image sensor, the substrate comprising a first substrate; and a second substrate; the first substrate has a groove, the second substrate is formed in the groove of the first substrate, and the band gap of the second substrate is wider than the first substrate.

The invention relates to a phase focusing image sensor and a forming method thereof, and the image sensor comprises a semiconductor substrate, wherein the semiconductor substrate comprises an image capture region and a phase focusing region. A first photosensitive layer is arranged in the image capture region of the semiconductor substrate, and a second photosensitive layer is arranged in the phase focusing region of the semiconductor substrate. The image sensor also comprises a first anti-reflection structure which is located on the surface of the semiconductor substrate image capture region;a second anti-reflection structure which is located on the surface of the semiconductor substrate phase focusing area, wherein the reflectivity of the second anti-reflection structure is greater thanthat of the first anti-reflection structure; a first light filtering layer which is located on the surface of the first anti-reflection structure, wherein the monochromatic light passes through the first light filtering layer; and a second light filtering layer which is located on the surface of the second anti-reflection structure, wherein the natural light passes through the second light filtering layer. The performance of the phase focusing image sensor is improved.

A solar cell electrode printing screen comprises a first screen and a second screen; the first screen comprises a first template; a plurality of first thin grids are formed in the first template; the first template is provided with alignment holes and wedge-shaped holes; the second screen comprises a second template; the second template is provided with a plurality of second thin grids and main grids; the second thin grids and the main grids are intersected; the distance between axes of the adjacent two second thin grids is equal to that between axes of the adjacent two first thin grids; the width of the second thin grids is smaller than or equal to that of the first thin grids; the main grids are provided with alignment portions; one ends of the main grids are provided with sharp corner hollow-outs; the shortest distance between edges of the alignment portions and end surfaces of the top ends of the sharp corner hollow-outs is equal to that between the edges of the alignment holes and the edges of the wedge-shaped holes. According to the solar cell electrode printing screen, substrates after the second screen and the first screen are printed are accurately aligned and dislocation of a thin grid line during printing at the second time and a thin grid line during printing at the first time is avoided. The invention also provides a solar cell electrode and a manufacturing method thereof.

The invention discloses a photovoltaic solar energy system, comprising a solar panel main body, connecting components are arranged on both sides of the solar panel main body, a cleaning mechanism is arranged between the two connecting components, and the cleaning mechanism is located on the solar panel main body On the outer side of the upper end, the upper end of the connection assembly is provided with an air pump, and the lower side of the upper outer surface of the solar panel main body is provided with an extrusion assembly, and both ends of the extrusion assembly are connected to the two connection assemblies through bolts Connection, and can connect and fix two adjacent solar panel main bodies through this component structure, and at the same time, through its lower fixing plate structure, it can be snapped and fixed on the surface of roof tiles, so that the whole component is evenly stressed, and at the same time, by adding a cleaning mechanism , not only can clean the dirt on the surface of the main body of the solar panel, but also can clean the snow through this mechanism in case of snow accumulation in the high cold, so as to ensure the normal operation of the equipment.

The invention discloses a perovskite solar cell based on a Spiro‑OMeTAD / PbS composite hole transport layer and a preparation method thereof. The perovskite solar cell consists of a transparent conductive substrate, an oxide electron transport layer, a perovskite light absorbing layer, a Spiro‑OMeTAD / PbS composite hole transport layer, and a metal electrode. The perovskite thin-film solar cell adopts an evaporation method with a simple process and can be used for large-scale production to prepare a lead sulfide thin film, which is inserted between Spiro-OMeTAD and the metal electrode layer as a buffer layer. This perovskite solar cell based on the Spiro‑OMeTAD / PbS composite hole transport layer achieved a high photoelectric conversion efficiency of 15.11%. As a buffer layer between the hole transport layer and the metal electrode, lead sulfide has higher hole mobility, better humidity stability and photothermal stability, which can reduce the recombination of electron-hole pairs and improve battery stability. sex. Compared with other buffer layer materials, lead sulfide can improve device performance while protecting the device, and has a positive role in promoting the industrialization of solar cells.

The invention relates to a dye sensitization nanometer crystal solar cell and its manufacturing method which is used the medium holes oxide gel as the quasi solid electrolyte. In the solar cell, the medium holes oxide quasi solid electrolyte is set to replace the liquid electrolyte at the surface of the wide-gap semiconductor nanometer crystal film absorbed the photosensitizer. The solar cell is utilized the medium holes oxide hole-channel structure to supply transmission channel for the anion. It can effectively solve the solvent leaking problem in the electrolyte at the condition that the photoelectric conversion efficiency of the cell is not sharply reduced.

An image sensor and a forming method thereof are provided. The image sensor includes a substrate including a first pixel region and a second pixel region; a substrate surface in the first pixel regionprovided with a first filter lay for passing monochromatic light; a second filter layer for transmitting natural light on the surface of the substrate in the second pixel region; a first anti-reflective structure located in a first pixel region, the first anti-reflective structure comprising one or both of a first anti-reflective coating and a second anti-reflective coating, the first anti-reflective coating being located between the first filter layer and the substrate, the second anti-reflective coating being located on the first filter layer; a second anti-reflective structure located in the second pixel region, the second anti-reflective structure having a thickness smaller than the first anti-reflective structure, the second anti-reflective structure comprising one or both of a thirdanti-reflective coating and a fourth anti-reflective coating, the third anti-reflective coating being located between the second filter layer and the substrate, and the fourth anti-reflective coatingbeing located on the second filter layer. The performance of the image sensor is improved.