Antireflection material for solar cell and manufacturing method thereof

A solar cell and anti-reflection technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effects of promoting the solar industry, excellent optical properties, and good thermal stability

Inactive Publication Date: 2011-03-30
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are few reports on the research work on rare earth oxide thin films as anti-reflection materials. The research work on this type of materials is still in the initial stage, and...

Method used

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  • Antireflection material for solar cell and manufacturing method thereof
  • Antireflection material for solar cell and manufacturing method thereof
  • Antireflection material for solar cell and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0040] A kind of anti-reflection material for solar cells, namely Al 2 o 3 The ErAlO amorphous composite oxide film with a mole percentage of 30%.

[0041] Er 2 o 3 / Al 2 o 3 A 7:3 mixed ceramic target is formed by sputtering on a P-type Si(100) substrate; the resistivity of the selected silicon wafer is 2-10 Ω·cm, the substrate temperature is room temperature, and surface treatment is required before growth. The RF power is 40 W, and the sputtering gas is Ar and O 2 , oxygen partial pressure ratio P=P(O 2 ) / ((P(O 2 )+P(Ar)) is 1%, and the working pressure is 1.0 Pa. P-type (100) silicon wafers with a resistivity of 2-10 Ω cm were ultrasonically cleaned with deionized water for 10 min before growth, and then etched with 1% HF acid for 30 s to remove the natural oxide layer on the surface of the Si substrate. , and finally sent to the growth chamber. The thickness of the obtained ErAlO thin film was 90 nm, and the annealing treatment was carried out in an annealing fu...

Embodiment 2

[0043] A kind of anti-reflection material for solar cells, namely Al 2 o 3 The ErAlO amorphous oxide film with a mole percentage of 0%.

[0044] Er 2 o 3 The ceramic target is formed by sputtering on a P-type Si(100) substrate; the resistivity of the selected silicon wafer is 2-10 Ω·cm, the temperature of the substrate is room temperature, and surface treatment is required before growth. The RF power is 40 W, and the sputtering gas is Ar and O 2 , oxygen partial pressure ratio P=P(O 2 ) / ((P(O 2 )+P(Ar)) is 1%, and the working pressure is 1.0 Pa. P-type (100) silicon wafers with a resistivity of 2-10 Ω cm were ultrasonically cleaned with deionized water for 10 min before growth, and then etched with 1% HF acid for 30 s to remove the natural oxide layer on the surface of the Si substrate. , and finally sent to the growth chamber. The thickness of the obtained ErAlO thin film was 90 nm, and the annealing treatment was carried out in an annealing furnace with an oxygen flo...

Embodiment 3

[0046] Changed Al in ErAlO film 2 o 3 content, with Al 2 o 3 Al with a molar content of 20% 2 o 3 -Er 2 o 3 A mixed ceramic target is used as a sputtering target, and other manufacturing conditions are the same as in Example 1.

[0047] figure 1 It is the XRD spectrum before and after 900 ℃ of annealing of the thin film of embodiment 1, from figure 1 It can be seen that the film of Example 1 does not have any characteristic diffraction peaks, indicating that when the substrate temperature is room temperature, the ErAlO film deposited on the Si(100) substrate by radio frequency sputtering is in an amorphous state. No obvious crystallization occurred in the film during annealing at 900℃.

[0048] figure 2 It is the XRD spectrum of Example 2, whether it is under nitrogen atmosphere or under oxygen atmosphere, after annealing at 900 ℃, Er 2 o 3 The XRD analysis of the thin film shows that there are silicate diffraction peaks, and the samples are unstable when annealed...

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Abstract

The invention discloses an antireflection material for a solar cell and a manufacturing method thereof. The antireflection material is an erbium oxide-aluminum oxide (Er2O3-Al2O3) composite material, wherein the content of Al2O3 is 20-30 percent. The antireflection material is a stable amorphous composite oxide material. In the invention, the antireflection material is manufactured by adopting radio frequency magnetron sputtering, and a sputtering target is an Er2O3 and Al2O3 mixed ceramic target; and an ErAlO amorphous antireflection oxide film is prepared on a P-type Si (100) substrate. The antireflection material for a solar cell has adjustable refractive index, good antireflection effect and good heat stability and optical characteristics.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to the application field of optoelectronic materials, in particular to an anti-reflection material and a preparation method thereof. The invention utilizes a radio frequency magnetron sputtering method to prepare amorphous Er 2 o 3 -Al 2 o 3 (ErAlO) anti-reflection composite oxide film. The invention provides a method to replace the traditional anti-reflection material SiO 2 、TiO 2 Novel anti-reflection candidate materials by et al., and their preparation methods are provided. Background technique [0002] Solar cells are the most basic components in photovoltaic power generation systems, and are devices that directly convert solar energy into electrical energy. [1-3] . In order to improve the photoelectric conversion efficiency, in recent years, the research and development of new solar energy materials (such as anti-reflection materials, semiconductor materials, electrode mat...

Claims

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Application Information

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IPC IPC(8): H01L31/0216C04B35/50C04B35/622
Inventor 朱燕艳
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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