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Spiro-OMeTAD/PbS composite hole transport layer based perovskite solar cell and preparation method therefor

A hole transport layer, solar cell technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem of low stability of perovskite solar cells, achieve good photoelectric conversion efficiency and stable performance, reduce Production cost, simple steps

Active Publication Date: 2016-11-16
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem to be solved by the present invention is to provide a perovskite solar cell based on the Spiro-OMeTAD / PbS composite hole transport layer and a large-area p-type sulfurized solar cell for the characteristics of low stability of the existing perovskite solar cell lead film method

Method used

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  • Spiro-OMeTAD/PbS composite hole transport layer based perovskite solar cell and preparation method therefor
  • Spiro-OMeTAD/PbS composite hole transport layer based perovskite solar cell and preparation method therefor
  • Spiro-OMeTAD/PbS composite hole transport layer based perovskite solar cell and preparation method therefor

Examples

Experimental program
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Embodiment 1

[0052] 1) Cleaning. First, clean and dry the FTO conductive glass. Clean the FTO conductive glass of appropriate size with detergent, and then rinse it with deionized water. Then put it into an ultrasonic cleaner to clean it ultrasonically with acetone, ethanol, and deionized water in sequence, and finally dry it with nitrogen to obtain the FTO conductive glass substrate with a clean surface required for the experiment.

[0053] 2) Preparation of oxide electron transport layer: 0.1mol / L of SnCl 2 2H 2 O ethanol solution was stirred for 30 minutes to obtain SnCl 2 Precursor solution; then SnCl 2 The precursor solution was evenly spin-coated on the cleaned FTO conductive glass with a glue spinner, and annealed at 200 degrees Celsius for 1 hour after the spin-coating was completed to obtain an oxide electron transport layer.

[0054] 3) Perovskite light-absorbing layer (CH 3 NH 3 PB 3 thin film) preparation: pre-synthesized CH 3 NH 3 I and PbI 2 Dissolve in a mixed sol...

Embodiment 2

[0059] 1) Cleaning. With embodiment 1.

[0060] 2) Preparation of oxide electron transport layer: 0.1mol / L of SnCl 2 2H 2 O ethanol solution was stirred for 30 minutes to obtain SnCl 2 Precursor solution; then SnCl 2 The precursor solution was evenly spin-coated on the cleaned FTO conductive glass with a glue spinner, and annealed at 200 degrees Celsius for 1 hour after the spin-coating was completed to obtain an oxide electron transport layer.

[0061] 3) Perovskite light-absorbing layer (CH 3 NH 3 PB 3 thin film) preparation: pre-synthesized CH 3 NH 3 I and PbI2 Dissolve in a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a molar ratio of 1:1 (v / v=4:1), and stir at 60 degrees Celsius for 24 hours to obtain perovskite Precursor solution; then spin-coat the configured perovskite precursor solution evenly on the annealed oxide electron transport layer, first spin-coat at a low speed of 500rpm for 6s, and then spin-coat at a high speed of 400...

Embodiment 3

[0066] 1) Cleaning. With embodiment 1.

[0067] 2) Preparation of oxide electron transport layer: 0.1mol / L of SnCl 2 2H 2 O ethanol solution was stirred for 30 minutes to obtain SnCl 2 Precursor solution; then SnCl 2 The precursor solution was evenly spin-coated on the cleaned FTO conductive glass with a glue spinner, and annealed at 200 degrees Celsius for 1 hour after the spin-coating was completed to obtain an oxide electron transport layer.

[0068] 3) Perovskite light-absorbing layer (CH 3 NH 3 PB 3 thin film) preparation: pre-synthesized CH 3 NH 3 I and PbI 2 Dissolve in a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a molar ratio of 1:1 (v / v=4:1), and stir at 60 degrees Celsius for 24 hours to obtain perovskite Precursor solution; then spin-coat the configured perovskite precursor solution evenly on the annealed oxide electron transport layer, first spin-coat at a low speed of 500rpm for 6s, and then spin-coat at a high speed of 4...

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Abstract

The invention discloses a Spiro-OMeTAD / PbS composite hole transport layer based perovskite solar cell and a preparation method therefor. The perovskite solar cell comprises a transparent conductive substrate, an oxide electron transport layer, a perovskite solar light absorption layer, the Spiro-OMeTAD / PbS composite hole transport layer and a metal electrode. The perovskite thin film solar cell adopts a simple process; a lead sulfide thin film can be prepared by a large-area evaporation method; and the lead sulfide thin film can be inserted between the Spiro-OMeTAD and the metal electrode layer to be used as a buffer layer. The Spiro-OMeTAD / PbS composite hole transport layer based perovskite solar cell achieves a high photoelectric conversion efficiency which is as high as 15.11%; the lead sulfide, which is used as the buffer layer between the hole transport layer and the metal electrode, has higher hole mobility, and higher humidity stability and light and heat stability, so that the recombination of electron-hole pairs can be reduced; meanwhile, the stability of the cell can be improved; compared with other buffer layer materials, the lead sulfide can protect a device and improve the performance of the device as well; and therefore, a positive promotion effect is realized on the industrial development of the solar cell.

Description

technical field [0001] The invention relates to a perovskite solar cell based on a Spiro-OMeTAD / PbS composite hole transport layer and a preparation method thereof, belonging to the field of optoelectronic materials and devices. Background technique [0002] In recent years, the energy crisis has become more and more urgent, and the research on clean energy has become more and more urgent. Solar energy has become one of the most potential clean energy sources due to its huge reserves and long-lasting stability, and solar cells can directly convert solar energy into electrical energy, which has great application prospects. [0003] As a rising star in the second generation of thin-film solar cells, perovskite solar cells have developed rapidly in recent years. Due to their high photoelectric conversion efficiency, they have caused an unprecedented research boom at home and abroad, and have achieved many research results. . Organic-inorganic hybrid perovskite materials have ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K71/166H10K30/10Y02E10/549
Inventor 方国家郑小璐雷红伟
Owner WUHAN UNIV
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