Manufacturing method of N-type solar battery

A technology of solar cells and manufacturing methods, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of low photoelectric conversion efficiency, achieve the effect of improving photoelectric conversion efficiency and reducing metal impurities

Active Publication Date: 2012-10-03
YINGLI ENERGY CHINA
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Problems solved by technology

[0004] However, the photoelectric conversion efficiency of existing N-type solar cells is relatively low. Therefore, how to improve the photoelectric conversion efficiency of N-type solar cells is an urgent problem to be solved in the development of N-type solar cells.

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  • Manufacturing method of N-type solar battery

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Embodiment Construction

[0026] As described in the background technology, the photoelectric conversion efficiency of the existing N-type solar cells is relatively low. The inventors have found that the existing N-type solar cell manufacturing methods cannot effectively remove the metal impurities on the surface of the silicon wafer. When boron is diffused, it will diffuse into the silicon wafer in a high-temperature diffusion furnace, forming a carrier recombination center inside the silicon wafer, reducing the lifetime of minority carriers inside the silicon wafer, and further reducing the photoelectric conversion efficiency of the N-type solar cell.

[0027] refer to figure 1 , figure 1 It is a schematic flow chart of a common N-type solar cell manufacturing method in the prior art, including:

[0028] Step S11: providing a silicon wafer to be processed.

[0029] Step S11: removing the damaged layer on the surface of the silicon wafer.

[0030] The silicon wafer to be treated is cleaned with a m...

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Abstract

The invention discloses a manufacturing method of an N-type solar battery. The method comprises the following steps of: providing a silicon wafer to be treated; removing a damaged layer on the surface of the silicon wafer; carrying out surface texturing on the silicon wafer; washing the silicon wafer to remove metal impurities remaining on the surface of the silicon wafer; and carrying out boron diffusion on the dried silicon wafer. According to the technical scheme disclosed by the invention, parts of the metal impurities on the surface of the silicon wafer can be removed in a working procedure of removing the damaged layer; after the silicon wafer is textured and before the boron diffusion is carried out, the silicon wafer is washed; a reagent which does not damage surface textured face of the silicon wafer, does not influence the boron diffusion effect of the silicon wafer and is used for transferring the metal impurities on the surface of the silicon wafer into a compound which can be dissolved into water is used for washing the silicon wafer to remove the residual metal impurities on the surface of the silicon wafer, so that the diffusion and blocking quality is guaranteed in the boron diffusion process, and the photoelectric conversion efficiency of the N-type solar battery is further improved.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing technology, and more specifically, relates to a method for manufacturing an N-type solar cell. Background technique [0002] In today's increasingly serious energy crisis, the development of new energy has become a major topic in the field of energy. Solar energy has become a main object of new energy development and research because of its characteristics of non-pollution, inexhaustibility, and no regional restrictions. [0003] Photovoltaic power generation using solar cells is a major way of utilizing solar energy today. The carrier of solar cells is a silicon wafer, which can be divided into P-type solar cells and N-type solar cells according to the different doping types of the silicon wafers. Among them, N-type solar cells have become a major research topic in the photovoltaic industry due to their more stable performance and longer minority carrier life than P-type solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张伟李高非胡志岩熊景峰
Owner YINGLI ENERGY CHINA
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