Solar cell and preparation method thereof

A technology of solar cells and regions, applied in the field of solar cells, can solve problems such as high short-circuit current of high-efficiency cells

Active Publication Date: 2020-10-27
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the area of ​​the battery continues to increase, and the short-circuit current of the high-efficiency battery continues to incre

Method used

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  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof

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preparation example Construction

[0063] The invention also discloses a method for preparing a solar cell, such as figure 2 shown, including the following steps:

[0064] S1. Provide a p-type or n-type silicon substrate 1 with a resistivity of 0.1-20Ω·cm, and use NaOH or KOH to texture the silicon substrate 1. The structure after texture is as follows image 3 As shown, HCl, O 3 、H 2 o 2 , HF, KOH and other mixed solutions for surface cleaning.

[0065] S2, front doping: use gaseous BCl on the texturing surface of the front of the silicon substrate 1 3 or BBr 3 The source carries out boron diffusion at 700~1100℃ or adopts pH 3 , red phosphorus or B 2 h 6 The ion implantation of the plasma source is followed by annealing at 700-1100°C for doping; the structure after front doping is as follows Figure 4 As shown, a doped layer 2 is formed on the textured surface of the front side of the silicon substrate 1 , silica glass is formed on the top of the doped layer 2 , and a diffusion layer is formed on the...

Embodiment 1

[0095] This embodiment discloses a solar cell and its preparation method. The structure of the solar cell in this embodiment is as follows figure 1 shown.

[0096] In the preparation method of this embodiment, the silicon substrate 1 is an n-type silicon wafer, the front doping is boron diffusion, and the furnace tube is oxidized to prepare silicon dioxide (SiO 2 ) passivation medium layer 5, the selective carrier transport layer 6 is intrinsic intrinsic polysilicon, the selective carrier transport layer 6 is implanted with P by ion implantation to achieve doping, the flow chart of the whole preparation method is as follows figure 2 shown. Specific steps are as follows:

[0097] Front-side doping: select an n-type single crystal silicon wafer with a resistivity of 0.1-20Ω·cm, and place it in a texture-making tank for surface texturing to form a textured structure, such as image 3 Shown; Then the silicon wafer after the texturing is placed in the boron (B) diffusion furnac...

Embodiment 2

[0108] This embodiment discloses a solar cell and its preparation method. The structure of the solar cell in this embodiment is the same as that in Embodiment 1. The difference is that in the preparation method of this embodiment, the chemical method of nitric acid oxidation is used to prepare silicon dioxide (SiO 2 ), the passivation medium layer 5, and the selective carrier transport layer 6 are laminated silicon thin films of P-doped amorphous silicon and intrinsic polysilicon. Specific steps are as follows:

[0109] Front-side doping: select an n-type single crystal silicon wafer with a resistivity of 0.1-20Ω·cm, and place it in a texture-making tank for surface texturing to form a textured structure, such as image 3 Shown; Then the silicon wafer after the texturing is placed in the boron (B) diffusion furnace tube to prepare the p+ doped layer 2, and borosilicate glass is formed on the front side simultaneously, as Figure 4 shown.

[0110] Removal of doping on the ba...

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Abstract

The invention discloses a solar cell and a preparation method thereof, belongs to the technical field of solar cells, and solves the problems of relatively low cell yield and the like caused by relatively high leakage current of a solar cell in the prior art. The invention provides a solar cell. The solar cell comprises a silicon substrate body, the front face of the silicon substrate body comprises a first surface, the first surface comprises a doped region and a non-doped region, the non-doped region is distributed in the peripheral edge region of the doped region, the width of the non-dopedregion is not larger than 2 mm, and a doped layer is arranged on the upper surface of the doped region. The solar cell is low in leakage current.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] Human survival and development are inseparable from energy. Solar energy is one of the most advantageous renewable, large-volume, and clean energy sources. Crystalline silicon solar cells are a class of semiconductor devices that directly convert light energy into electrical energy. High-efficiency photoelectric conversion rate and lower use cost are human's desire for crystalline silicon solar cells. High-efficiency solar cells must have good surface passivation, low surface recombination rate, and then can obtain high open circuit voltage, short circuit current and conversion efficiency. At present, the surface passivation is mainly single-layer or multi-layer dielectric film structures such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. However, after the surface pa...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0236H01L31/18
CPCH01L31/0352H01L31/02363H01L31/1804H01L31/1824Y02E10/545
Inventor 张俊兵刘淑华尹海鹏
Owner JA SOLAR TECH YANGZHOU
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